IL32582A - An electric current controlling device - Google Patents
An electric current controlling deviceInfo
- Publication number
- IL32582A IL32582A IL32582A IL3258269A IL32582A IL 32582 A IL32582 A IL 32582A IL 32582 A IL32582 A IL 32582A IL 3258269 A IL3258269 A IL 3258269A IL 32582 A IL32582 A IL 32582A
- Authority
- IL
- Israel
- Prior art keywords
- current
- controlling device
- current controlling
- voltage
- electrical resistance
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 38
- 229910052785 arsenic Inorganic materials 0.000 claims description 16
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 15
- 230000007423 decrease Effects 0.000 claims description 7
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 5
- -1 boron o Chemical class 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- BALXUFOVQVENIU-KXNXZCPBSA-N pseudoephedrine hydrochloride Chemical compound [H+].[Cl-].CN[C@@H](C)[C@@H](O)C1=CC=CC=C1 BALXUFOVQVENIU-KXNXZCPBSA-N 0.000 claims 1
- 230000001276 controlling effect Effects 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- JCOYSJUVISSNIQ-UHFFFAOYSA-N [As].[Si].[Cd] Chemical compound [As].[Si].[Cd] JCOYSJUVISSNIQ-UHFFFAOYSA-N 0.000 description 2
- LOPFACFYGZXPRZ-UHFFFAOYSA-N [Si].[As] Chemical compound [Si].[As] LOPFACFYGZXPRZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000000452 restraining effect Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 241000736839 Chara Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- OGFMUZSDWFEMCY-UHFFFAOYSA-N [Cd].[As].[Ge] Chemical compound [Cd].[As].[Ge] OGFMUZSDWFEMCY-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75453368A | 1968-08-22 | 1968-08-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL32582A0 IL32582A0 (en) | 1969-09-25 |
| IL32582A true IL32582A (en) | 1973-05-31 |
Family
ID=25035211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL32582A IL32582A (en) | 1968-08-22 | 1969-07-09 | An electric current controlling device |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3571673A (xx) |
| BE (1) | BE737612A (xx) |
| DE (1) | DE1939280A1 (xx) |
| FR (1) | FR2016174B1 (xx) |
| GB (1) | GB1280689A (xx) |
| IL (1) | IL32582A (xx) |
| NL (1) | NL6912470A (xx) |
| RO (1) | RO59767A (xx) |
| SE (1) | SE359402B (xx) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3656029A (en) * | 1970-12-31 | 1972-04-11 | Ibm | BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT |
| US3872492A (en) * | 1972-07-26 | 1975-03-18 | Energy Conversion Devices Inc | Radiation hardened field effect transistor |
| US4064757A (en) * | 1976-10-18 | 1977-12-27 | Allied Chemical Corporation | Glassy metal alloy temperature sensing elements for resistance thermometers |
| EP0095283A3 (en) * | 1982-05-15 | 1984-12-27 | The British Petroleum Company p.l.c. | Memory device |
| US5247349A (en) * | 1982-11-16 | 1993-09-21 | Stauffer Chemical Company | Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure |
| US4567503A (en) * | 1983-06-29 | 1986-01-28 | Stauffer Chemical Company | MIS Device employing elemental pnictide or polyphosphide insulating layers |
| WO1992013359A1 (en) * | 1991-01-17 | 1992-08-06 | Crosspoint Solutions, Inc. | An improved antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof |
| US5322812A (en) * | 1991-03-20 | 1994-06-21 | Crosspoint Solutions, Inc. | Improved method of fabricating antifuses in an integrated circuit device and resulting structure |
| US5233217A (en) * | 1991-05-03 | 1993-08-03 | Crosspoint Solutions | Plug contact with antifuse |
| US5329153A (en) * | 1992-04-10 | 1994-07-12 | Crosspoint Solutions, Inc. | Antifuse with nonstoichiometric tin layer and method of manufacture thereof |
| US7038935B2 (en) * | 2002-08-02 | 2006-05-02 | Unity Semiconductor Corporation | 2-terminal trapped charge memory device with voltage switchable multi-level resistance |
| CN102751319B (zh) * | 2012-07-04 | 2015-04-15 | 中国科学院上海微系统与信息技术研究所 | 基于硫系化合物的浪涌保护器件及其制备方法 |
| CN102923676B (zh) * | 2012-10-25 | 2014-10-15 | 中国科学院上海微系统与信息技术研究所 | 一种适用于浪涌保护器件的硫系化合物薄膜材料 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1060505A (en) * | 1964-03-25 | 1967-03-01 | Nippon Telegraph & Telephone | Improvements in or relating to semiconductor devices |
| DE1213076B (de) * | 1964-07-04 | 1966-03-24 | Danfoss As | Elektronisches Festkoerperbauelement zum Schalten |
| DE1266894B (de) * | 1965-03-03 | 1968-04-25 | Danfoss As | Sperrschichtfreies Halbleiterschaltelement |
| US3409400A (en) * | 1967-03-10 | 1968-11-05 | Du Pont | Binary, ternary and quaternary compounds composed of silicon, nickel, arsenic, and phosphorus |
-
1968
- 1968-08-22 US US754533A patent/US3571673A/en not_active Expired - Lifetime
-
1969
- 1969-07-09 IL IL32582A patent/IL32582A/en unknown
- 1969-08-01 DE DE19691939280 patent/DE1939280A1/de active Pending
- 1969-08-04 GB GB38865/69A patent/GB1280689A/en not_active Expired
- 1969-08-15 NL NL6912470A patent/NL6912470A/xx unknown
- 1969-08-18 RO RO60820A patent/RO59767A/ro unknown
- 1969-08-18 BE BE737612D patent/BE737612A/xx unknown
- 1969-08-20 FR FR696928620A patent/FR2016174B1/fr not_active Expired
- 1969-08-21 SE SE11597/69A patent/SE359402B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6912470A (xx) | 1970-02-24 |
| IL32582A0 (en) | 1969-09-25 |
| SE359402B (xx) | 1973-08-27 |
| BE737612A (xx) | 1970-02-02 |
| DE1939280A1 (de) | 1970-02-26 |
| FR2016174B1 (xx) | 1974-06-14 |
| GB1280689A (en) | 1972-07-05 |
| FR2016174A1 (xx) | 1970-05-08 |
| RO59767A (xx) | 1976-06-15 |
| US3571673A (en) | 1971-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IL32582A (en) | An electric current controlling device | |
| US3611063A (en) | Amorphous electrode or electrode surface | |
| Koo et al. | Te-based amorphous binary OTS device with excellent selector characteristics for x-point memory applications | |
| US6914801B2 (en) | Method of eliminating drift in phase-change memory | |
| US4371883A (en) | Current controlled bistable electrical organic thin film switching device | |
| Potember et al. | Electrical switching and memory phenomena in Cu‐TCNQ thin films | |
| US3271591A (en) | Symmetrical current controlling device | |
| US4652894A (en) | Electrical organic thin film switching device switching between detectably different oxidation states | |
| US7459762B2 (en) | Programmable resistance memory element with threshold switching material | |
| Yoo et al. | Te-based binary OTS selectors with excellent selectivity (> 10 5), endurance (> 10 8) and thermal stability (> 450 C) | |
| US3748501A (en) | Multi-terminal amorphous electronic control device | |
| US3715634A (en) | Switchable current controlling device with inactive material dispersed in the active semiconductor material | |
| US3899558A (en) | Method of making a current controlling device including VO{HD 2{B | |
| Alegria et al. | Switching in Al-As-Te glass system | |
| US3343085A (en) | Overvoltage protection of a.c. measuring devices | |
| US3962715A (en) | High-speed, high-current spike suppressor and method for fabricating same | |
| Henisch et al. | Characteristics and mechanism of threshold switching | |
| US3053998A (en) | Three stable state semiconductive device | |
| Vander Plas et al. | Thermoelectric power of amorphous compound semiconductors | |
| US3619732A (en) | Coplanar semiconductor switch structure | |
| US3571670A (en) | tching device including boron and silicon, carbon or the like | |
| US3571672A (en) | Switching device including silicon and carbon | |
| Chekol et al. | Thermally stable Te-based binary OTS device for selector application | |
| Moser | Bistable Switching in Metal‐Semiconductor Junctions | |
| Atyia | Memory Switching in Amorphous Se 90 Te 10− x Pb x |