HK1157501A1 - 製造半導體組件和結構的方法 - Google Patents
製造半導體組件和結構的方法Info
- Publication number
- HK1157501A1 HK1157501A1 HK11111591.7A HK11111591A HK1157501A1 HK 1157501 A1 HK1157501 A1 HK 1157501A1 HK 11111591 A HK11111591 A HK 11111591A HK 1157501 A1 HK1157501 A1 HK 1157501A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- manufacturing
- semiconductor component
- semiconductor
- component
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H01L2924/14—Integrated circuits
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/569,732 US8445375B2 (en) | 2009-09-29 | 2009-09-29 | Method for manufacturing a semiconductor component |
Publications (1)
Publication Number | Publication Date |
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HK1157501A1 true HK1157501A1 (zh) | 2012-06-29 |
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ID=43779392
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK11111591.7A HK1157501A1 (zh) | 2009-09-29 | 2011-10-27 | 製造半導體組件和結構的方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US8445375B2 (zh) |
KR (1) | KR101746480B1 (zh) |
CN (1) | CN102034741B (zh) |
HK (1) | HK1157501A1 (zh) |
TW (1) | TWI512847B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8643196B2 (en) * | 2011-07-27 | 2014-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for bump to landing trace ratio |
US20130241058A1 (en) * | 2012-03-16 | 2013-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wire Bonding Structures for Integrated Circuits |
ES2573137T3 (es) * | 2012-09-14 | 2016-06-06 | Atotech Deutschland Gmbh | Método de metalización de sustratos de célula solar |
US20150097268A1 (en) * | 2013-10-07 | 2015-04-09 | Xintec Inc. | Inductor structure and manufacturing method thereof |
TWI576869B (zh) | 2014-01-24 | 2017-04-01 | 精材科技股份有限公司 | 被動元件結構及其製作方法 |
KR102410018B1 (ko) * | 2015-09-18 | 2022-06-16 | 삼성전자주식회사 | 반도체 패키지 |
US20190206822A1 (en) * | 2017-12-30 | 2019-07-04 | Intel Corporation | Missing bump prevention from galvanic corrosion by copper bump sidewall protection |
KR20220072234A (ko) * | 2020-11-25 | 2022-06-02 | 삼성전자주식회사 | Ubm 패드를 포함하는 반도체 패키지 |
CN113380650A (zh) * | 2021-08-12 | 2021-09-10 | 颀中科技(苏州)有限公司 | 一种金属凸块的制造方法及金属凸块结构 |
US20240379603A1 (en) * | 2023-05-08 | 2024-11-14 | Semiconductor Components Industries, Llc | Structure and method for power metal lines |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376584A (en) * | 1992-12-31 | 1994-12-27 | International Business Machines Corporation | Process of making pad structure for solder ball limiting metallurgy having reduced edge stress |
US5738931A (en) * | 1994-09-16 | 1998-04-14 | Kabushiki Kaisha Toshiba | Electronic device and magnetic device |
US6077726A (en) * | 1998-07-30 | 2000-06-20 | Motorola, Inc. | Method and apparatus for stress relief in solder bump formation on a semiconductor device |
US6753605B2 (en) | 2000-12-04 | 2004-06-22 | Fairchild Semiconductor Corporation | Passivation scheme for bumped wafers |
US6413851B1 (en) * | 2001-06-12 | 2002-07-02 | Advanced Interconnect Technology, Ltd. | Method of fabrication of barrier cap for under bump metal |
US6683375B2 (en) | 2001-06-15 | 2004-01-27 | Fairchild Semiconductor Corporation | Semiconductor die including conductive columns |
US20030006062A1 (en) * | 2001-07-06 | 2003-01-09 | Stone William M. | Interconnect system and method of fabrication |
JP2004095330A (ja) * | 2002-08-30 | 2004-03-25 | Tohoku Pioneer Corp | 電子部品を覆う保護膜の形成方法および保護膜を備えた電子機器 |
US6878633B2 (en) * | 2002-12-23 | 2005-04-12 | Freescale Semiconductor, Inc. | Flip-chip structure and method for high quality inductors and transformers |
TW584936B (en) * | 2003-03-20 | 2004-04-21 | Advanced Semiconductor Eng | Wafer bumping process |
US7276801B2 (en) * | 2003-09-22 | 2007-10-02 | Intel Corporation | Designs and methods for conductive bumps |
US6841475B1 (en) * | 2003-11-21 | 2005-01-11 | Au Optronics Corporation | Method for fabricating thin film transistors |
CN1665006A (zh) * | 2004-03-02 | 2005-09-07 | 沈育浓 | 形成导电凸块的方法及具有如此形成的导电凸块的装置 |
JP2006229112A (ja) | 2005-02-21 | 2006-08-31 | Casio Comput Co Ltd | 半導体装置およびその製造方法 |
CN1980530A (zh) * | 2005-11-30 | 2007-06-13 | 全懋精密科技股份有限公司 | 电路板导电凸块结构的制法 |
JP4247690B2 (ja) * | 2006-06-15 | 2009-04-02 | ソニー株式会社 | 電子部品及その製造方法 |
CN100474542C (zh) * | 2006-07-11 | 2009-04-01 | 日月光半导体制造股份有限公司 | 形成导电凸块的方法及其结构 |
US20090233436A1 (en) * | 2008-03-12 | 2009-09-17 | Stats Chippac, Ltd. | Semiconductor Device Having High-Density Interconnect Array with Core Pillars Formed With OSP Coating |
-
2009
- 2009-09-29 US US12/569,732 patent/US8445375B2/en active Active
-
2010
- 2010-07-27 TW TW099124753A patent/TWI512847B/zh active
- 2010-08-11 CN CN201010254550.8A patent/CN102034741B/zh not_active Expired - Fee Related
- 2010-09-27 KR KR1020100093021A patent/KR101746480B1/ko active Active
-
2011
- 2011-10-27 HK HK11111591.7A patent/HK1157501A1/zh not_active IP Right Cessation
-
2013
- 2013-05-08 US US13/889,573 patent/US9219010B2/en active Active
- 2013-05-08 US US13/889,582 patent/US9263390B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9219010B2 (en) | 2015-12-22 |
US20110074034A1 (en) | 2011-03-31 |
TW201133652A (en) | 2011-10-01 |
US9263390B2 (en) | 2016-02-16 |
KR20110035910A (ko) | 2011-04-06 |
US20130244418A1 (en) | 2013-09-19 |
KR101746480B1 (ko) | 2017-06-13 |
CN102034741B (zh) | 2015-07-22 |
US8445375B2 (en) | 2013-05-21 |
US20130234311A1 (en) | 2013-09-12 |
CN102034741A (zh) | 2011-04-27 |
TWI512847B (zh) | 2015-12-11 |
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