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HK1050033A1 - 真空成膜裝置 - Google Patents

真空成膜裝置

Info

Publication number
HK1050033A1
HK1050033A1 HK03102187.6A HK03102187A HK1050033A1 HK 1050033 A1 HK1050033 A1 HK 1050033A1 HK 03102187 A HK03102187 A HK 03102187A HK 1050033 A1 HK1050033 A1 HK 1050033A1
Authority
HK
Hong Kong
Prior art keywords
making device
vacuum membrane
membrane
vacuum
making
Prior art date
Application number
HK03102187.6A
Other languages
English (en)
Inventor
岡本浩一
福田祥慎
Original Assignee
新明和工業株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新明和工業株式會社 filed Critical 新明和工業株式會社
Publication of HK1050033A1 publication Critical patent/HK1050033A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
HK03102187.6A 2001-03-19 2003-03-26 真空成膜裝置 HK1050033A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001078281 2001-03-19

Publications (1)

Publication Number Publication Date
HK1050033A1 true HK1050033A1 (zh) 2003-06-06

Family

ID=18934918

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03102187.6A HK1050033A1 (zh) 2001-03-19 2003-03-26 真空成膜裝置

Country Status (6)

Country Link
US (1) US20020129770A1 (zh)
JP (1) JP4072889B2 (zh)
KR (1) KR100831527B1 (zh)
CN (1) CN1385554A (zh)
HK (1) HK1050033A1 (zh)
TW (1) TW583330B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100622224B1 (ko) * 2005-01-06 2006-09-14 삼성에스디아이 주식회사 저대역 통과 필터를 이용한 증착 시스템
KR100622223B1 (ko) * 2005-01-06 2006-09-14 삼성에스디아이 주식회사 잡음 제거기를 이용한 증착 시스템 및 그 제어방법
US20100313811A1 (en) * 2008-04-09 2010-12-16 Ulvac Inc. Evaporation source and film-forming device
US8135560B2 (en) * 2009-01-30 2012-03-13 Applied Materials, Inc. Sensor system for semiconductor manufacturing apparatus
JP5456711B2 (ja) * 2011-03-03 2014-04-02 住友重機械工業株式会社 成膜装置
JP2014515789A (ja) * 2011-04-20 2014-07-03 コーニンクレッカ フィリップス エヌ ヴェ 蒸着アプリケーションのための測定装置及び方法
JP6008731B2 (ja) * 2012-12-18 2016-10-19 キヤノントッキ株式会社 成膜装置
CN105084780B (zh) * 2014-05-05 2017-11-24 福州新福兴玻璃有限公司 一种遮阳型双银低辐射镀膜玻璃及其制备方法
JP6455480B2 (ja) * 2016-04-25 2019-01-23 トヨタ自動車株式会社 成膜装置及び成膜方法
CN109280898A (zh) * 2017-07-23 2019-01-29 杰莱特（苏州）精密仪器有限公司 一种真空用工件高速旋转装置
CN107764523A (zh) * 2017-11-30 2018-03-06 盛禛真空技术丹阳有限公司 镜片镀膜视觉监控系统及其使用方法
US20210328146A1 (en) * 2018-04-03 2021-10-21 Applied Materials, Inc. Apparatus and vacuum system for carrier alignment in a vacuum chamber, and method of aligning a carrier

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4681773A (en) * 1981-03-27 1987-07-21 American Telephone And Telegraph Company At&T Bell Laboratories Apparatus for simultaneous molecular beam deposition on a plurality of substrates
DE3421538A1 (de) * 1984-06-08 1985-12-12 ATOMIKA Technische Physik GmbH, 8000 München Vakuumaufdampfeinrichtung
JPS62159300A (ja) * 1986-01-07 1987-07-15 株式会社日立製作所 回転センサからの電気的出力信号検出装置
US6481369B1 (en) * 1999-10-14 2002-11-19 Hoya Corporation Thin film forming method and apparatus

Also Published As

Publication number Publication date
JP2002348657A (ja) 2002-12-04
KR20020074398A (ko) 2002-09-30
JP4072889B2 (ja) 2008-04-09
CN1385554A (zh) 2002-12-18
US20020129770A1 (en) 2002-09-19
TW583330B (en) 2004-04-11
KR100831527B1 (ko) 2008-05-22

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