GB977998A - Improvements relating to semiconductor devices - Google Patents
Improvements relating to semiconductor devicesInfo
- Publication number
- GB977998A GB977998A GB36351/61A GB3635161A GB977998A GB 977998 A GB977998 A GB 977998A GB 36351/61 A GB36351/61 A GB 36351/61A GB 3635161 A GB3635161 A GB 3635161A GB 977998 A GB977998 A GB 977998A
- Authority
- GB
- United Kingdom
- Prior art keywords
- disc
- base
- faces
- copper
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052802 copper Inorganic materials 0.000 abstract 3
- 239000010949 copper Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910001128 Sn alloy Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
977,998. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Oct. 10, 1961, No. 36351/61. Heading H1K. A device consists of a semi-conductor disc including two or more PN junctions parallel to its faces mounted between two rigid electrodes of the same external diameter as the respective faces of the disc. A further electrode is mounted on an exposed face of an intermediate zone lying parallel to the main faces. A disc-shaped junction transistor body 1 (Fig. 2) of silicon with a circumferential extension of the base zone is soldered by a lead-tin alloy between copper discs 5, 6. The difference in the expansion coefficients of copper and silicon causes a uniform radial compressive stress to be set up in the disc when the solder cools, which is maintained during operation. An annular base contact 8 is attached to the base zone extension. A controlled PNPN rectifier is constructed in essentially the same way. An alternative junction transistor construction is shown in Fig. 4. In this case the copper discs 22, 24 are each pierced by corresponding C-shaped apertures 23, 25 or by pairs of concentric C-shaped apertures interconnected at their centres, Fig. 6 (not shown). The base zone extends to a face of the wafer in one annular region 19 as shown, or in two such regions, and base contacts corresponding in shape to the apertures in the emitter and collector disc contacts are made to these regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB36351/61A GB977998A (en) | 1961-10-10 | 1961-10-10 | Improvements relating to semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB36351/61A GB977998A (en) | 1961-10-10 | 1961-10-10 | Improvements relating to semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB977998A true GB977998A (en) | 1964-12-16 |
Family
ID=10387350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB36351/61A Expired GB977998A (en) | 1961-10-10 | 1961-10-10 | Improvements relating to semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB977998A (en) |
-
1961
- 1961-10-10 GB GB36351/61A patent/GB977998A/en not_active Expired
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