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GB9625263D0 - A method for increasing capacitance - Google Patents

A method for increasing capacitance

Info

Publication number
GB9625263D0
GB9625263D0 GBGB9625263.0A GB9625263A GB9625263D0 GB 9625263 D0 GB9625263 D0 GB 9625263D0 GB 9625263 A GB9625263 A GB 9625263A GB 9625263 D0 GB9625263 D0 GB 9625263D0
Authority
GB
United Kingdom
Prior art keywords
increasing capacitance
capacitance
increasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9625263.0A
Other versions
GB2320133B (en
GB2320133A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to GB9625263A priority Critical patent/GB2320133B/en
Priority to DE19651832A priority patent/DE19651832B4/en
Publication of GB9625263D0 publication Critical patent/GB9625263D0/en
Publication of GB2320133A publication Critical patent/GB2320133A/en
Application granted granted Critical
Publication of GB2320133B publication Critical patent/GB2320133B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9625263A 1996-12-04 1996-12-04 A method for increasing capacitance Expired - Fee Related GB2320133B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9625263A GB2320133B (en) 1996-12-04 1996-12-04 A method for increasing capacitance
DE19651832A DE19651832B4 (en) 1996-12-04 1996-12-13 Method for producing a semiconductor component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9625263A GB2320133B (en) 1996-12-04 1996-12-04 A method for increasing capacitance
DE19651832A DE19651832B4 (en) 1996-12-04 1996-12-13 Method for producing a semiconductor component

Publications (3)

Publication Number Publication Date
GB9625263D0 true GB9625263D0 (en) 1997-01-22
GB2320133A GB2320133A (en) 1998-06-10
GB2320133B GB2320133B (en) 2001-10-24

Family

ID=26032168

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9625263A Expired - Fee Related GB2320133B (en) 1996-12-04 1996-12-04 A method for increasing capacitance

Country Status (2)

Country Link
DE (1) DE19651832B4 (en)
GB (1) GB2320133B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335288B1 (en) 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
DE10203998A1 (en) * 2002-02-01 2003-08-21 Infineon Technologies Ag Production of a toothed structure in crystal structure in/on substrate used in production of floating gate transistor comprises forming trenches using a mask on the substrate and etching process and the unmasked region of substrate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164338A (en) * 1988-04-28 1992-11-17 U.S. Philips Corporation Method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body and silicon pressure sensor having such a resistance layer
US5366917A (en) * 1990-03-20 1994-11-22 Nec Corporation Method for fabricating polycrystalline silicon having micro roughness on the surface
DE4321638A1 (en) * 1992-09-19 1994-03-24 Samsung Electronics Co Ltd Semiconductor element of high integration esp DRAM elements - comprises capacitor consisting of dielectric layer covering first electrode, an second electrode formed on dielectric layer
JPH07161931A (en) * 1993-12-02 1995-06-23 Nec Corp Manufacture of semiconductor device
KR0165499B1 (en) * 1995-01-26 1998-12-15 Samsung Electronics Co Ltd Capacitor fabrication method of semiconductor device

Also Published As

Publication number Publication date
GB2320133B (en) 2001-10-24
DE19651832B4 (en) 2006-01-05
GB2320133A (en) 1998-06-10
DE19651832A1 (en) 1998-06-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20071204