GB959488A - A semi-conductor device - Google Patents
A semi-conductor deviceInfo
- Publication number
- GB959488A GB959488A GB35379/61A GB3537961A GB959488A GB 959488 A GB959488 A GB 959488A GB 35379/61 A GB35379/61 A GB 35379/61A GB 3537961 A GB3537961 A GB 3537961A GB 959488 A GB959488 A GB 959488A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- zone
- semi
- alloyed
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- OPEKUPPJGIMIDT-UHFFFAOYSA-N boron gold Chemical compound [B].[Au] OPEKUPPJGIMIDT-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000010791 quenching Methods 0.000 abstract 1
- 230000000171 quenching effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
Landscapes
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
959,488. Semi-conductor devices. SIEMENS - SCHUCKERTWERKE A.G. Sept. 29, 1961 [Sept. 30, 1960], No. 35379/61. Heading H1K. A PNPN semi-conductor device comprises a point form electrode on one of the inner zones, which lies adjacent a projection forming part of a large area electrode on the adjoining end zone so that a portion of high current density is provided. Figs. 2 and 3 show a semi-conductor body with four NPNP zones 6, 3a, 2, 3b respectively. A boron-gold foil is alloyed to P-zone 3b to provide ohmic contact 5 and a gold-antimony circular disc with a projection is alloyed to P-zone 3a to form the N-zone 6 and electrode 7. A small boron containing gold foil is alloyed to P-zone 3a to provide electrode 8. Electrodes 7 and 8 may be 50 Á apart. In operation, the positive pole of the load current source is connected to electrode 5 and the negative to electrode 7. Striking current may be applied through electrode 8 to effect conduction in thyratron manner between the main electrodes; quenching may be effected by providing current pulses in the opposite direction through electrode 8. The high current density between electrodes 7 and 8 in the projection area establishes the first highly conductive region which then spreads over the whole of electrode 7. The P-layer 3 may be provided by heating an N-type, 100 ohm cm. silicon wafer in the presence of aluminium at 1200 C. for 40 hours to give a doping concentration of about 10<SP>15</SP>/cm.<SP>3</SP> Etching separates the layer into two portions, 3a and 3b.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES70726A DE1156509B (en) | 1960-09-30 | 1960-09-30 | A semiconductor component having an essentially single-crystal semiconductor body and four zones of alternating conductivity type connected in series, and a method of manufacturing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB959488A true GB959488A (en) | 1964-06-03 |
Family
ID=7501986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB35379/61A Expired GB959488A (en) | 1960-09-30 | 1961-09-29 | A semi-conductor device |
Country Status (3)
| Country | Link |
|---|---|
| CH (1) | CH386568A (en) |
| DE (1) | DE1156509B (en) |
| GB (1) | GB959488A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE966276C (en) * | 1953-03-01 | 1957-07-18 | Siemens Ag | Semiconductor arrangement with at least two control electrodes or groups of control electrodes for electronic scanning or switching arrangements |
-
1960
- 1960-09-30 DE DES70726A patent/DE1156509B/en active Pending
-
1961
- 1961-08-30 CH CH1007661A patent/CH386568A/en unknown
- 1961-09-29 GB GB35379/61A patent/GB959488A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1156509B (en) | 1963-10-31 |
| CH386568A (en) | 1965-01-15 |
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