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GB945735A - Process for etching semiconductors in the fabrication of miniature semiconductor networks comprising a single semiconductor block - Google Patents

Process for etching semiconductors in the fabrication of miniature semiconductor networks comprising a single semiconductor block

Info

Publication number
GB945735A
GB945735A GB1606660A GB1606660A GB945735A GB 945735 A GB945735 A GB 945735A GB 1606660 A GB1606660 A GB 1606660A GB 1606660 A GB1606660 A GB 1606660A GB 945735 A GB945735 A GB 945735A
Authority
GB
United Kingdom
Prior art keywords
etched
miniature
fabrication
semi
edges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1606660A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB945735A publication Critical patent/GB945735A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/12Etching of semiconducting materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Weting (AREA)

Abstract

<PICT:0945735/C3/1> Semi-conductor materials are etched selectively by coating with a photo-sensitive masking material which is then exposed to light through a stencil of the desired pattern, which is then developed removing areas of masking material, this is then etched mounting a positive electrode 23 in parallel alignment with the prepared surface of the semi-conductor 10 as shown in Fig. 5. By this means "under-cutting" at the edges of the mask is prevented, and the edges of the etched area are sharp. Preferably a germanium material is etched with 20% H3PO4 solution, and silicon with 20 to 40% H2SO4 containing a little ammonium bifluoride. Before the etching step the coated material may be washed and baked at 150 DEG C. to harden the patterned coating. The transistor produced has highly defined etch detail and may be used in the miniature net-works described in Specification 945,734.
GB1606660A 1959-05-06 1960-05-06 Process for etching semiconductors in the fabrication of miniature semiconductor networks comprising a single semiconductor block Expired GB945735A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81129659A 1959-05-06 1959-05-06

Publications (1)

Publication Number Publication Date
GB945735A true GB945735A (en) 1964-01-08

Family

ID=25206147

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1606660A Expired GB945735A (en) 1959-05-06 1960-05-06 Process for etching semiconductors in the fabrication of miniature semiconductor networks comprising a single semiconductor block

Country Status (3)

Country Link
GB (1) GB945735A (en)
LU (1) LU38604A1 (en)
MY (1) MY6900297A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096619A (en) * 1977-01-31 1978-06-27 International Telephone & Telegraph Corporation Semiconductor scribing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096619A (en) * 1977-01-31 1978-06-27 International Telephone & Telegraph Corporation Semiconductor scribing method

Also Published As

Publication number Publication date
MY6900297A (en) 1969-12-31
LU38604A1 (en) 1960-07-05

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