GB941017A - Semi-conductor devices - Google Patents
Semi-conductor devicesInfo
- Publication number
- GB941017A GB941017A GB44251/60A GB4425160A GB941017A GB 941017 A GB941017 A GB 941017A GB 44251/60 A GB44251/60 A GB 44251/60A GB 4425160 A GB4425160 A GB 4425160A GB 941017 A GB941017 A GB 941017A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor
- neck regions
- bulk
- unchanged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 239000000463 material Substances 0.000 abstract 8
- 239000002245 particle Substances 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- FBGGJHZVZAAUKJ-UHFFFAOYSA-N bismuth selenide Chemical compound [Se-2].[Se-2].[Se-2].[Bi+3].[Bi+3] FBGGJHZVZAAUKJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000013590 bulk material Substances 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000008187 granular material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A photo-electric transducer material comprises a powdered semi-conductor material which is compacted, preferably by vibration, i.e. under low pressure, and sintered to produce a multiplicity of interconnecting neck regions between adjacent granules of the material the neck regions having cross-section dimensions of the same order of magnitude as the average phonon mean free path length in the semi-conductor material. In the described embodiment a gallium doped polycrystalline P type germanium of specific resistivity 5 X 10-3 ohm/cm is ground to a particle size of 1/10 to 10 microns and placed in a silica glass receptacle under vacuum and shaken to compact it to approximately 63% of the density of the bulk material. The powder is then heated to 850 DEG C. for one hour to surface sinter the particles. Alternatively a mixture of two or more different semi-conductor materials may be used, e.g. bismuth telluride and bismuth selenide. The semi-conductor material may be doped with, e.g. arsenic which may totally infuse the neck regions while leaving the bulk of the material substantially unchanged, this increases the thermo-electric figure of merit by increasing the charge carrier conductivity of the neck regions of the semi-conductor whilst the bulk of the material is unchanged.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86216459A | 1959-12-28 | 1959-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB941017A true GB941017A (en) | 1963-11-06 |
Family
ID=25337833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB44251/60A Expired GB941017A (en) | 1959-12-28 | 1960-12-23 | Semi-conductor devices |
Country Status (2)
| Country | Link |
|---|---|
| BE (1) | BE598599A (en) |
| GB (1) | GB941017A (en) |
-
1960
- 1960-12-23 GB GB44251/60A patent/GB941017A/en not_active Expired
- 1960-12-28 BE BE598599A patent/BE598599A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE598599A (en) | 1961-06-28 |
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