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GB919048A - Improvements in or relating to the manufacture of semi-conductor materials - Google Patents

Improvements in or relating to the manufacture of semi-conductor materials

Info

Publication number
GB919048A
GB919048A GB2757160A GB2757160A GB919048A GB 919048 A GB919048 A GB 919048A GB 2757160 A GB2757160 A GB 2757160A GB 2757160 A GB2757160 A GB 2757160A GB 919048 A GB919048 A GB 919048A
Authority
GB
United Kingdom
Prior art keywords
semi
elements
atm
relating
powder mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2757160A
Inventor
Cyril Simon Brown
Peter Brian Hart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB2757160A priority Critical patent/GB919048A/en
Publication of GB919048A publication Critical patent/GB919048A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G1/00Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/12Sulfides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/007Tellurides or selenides of metals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer

Landscapes

  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Conductive Materials (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

A method of manufacturing a semi-conductor material of stoichiometric composition XZ, where X consists of zinc or cadmium and Z consists of one or more of the elements sulphur selenium or tellurium, comprises heating at 200 DEG -400 DEG C. an intimate mixture of the finely powdered elements in the required proportions, in contact with water, sodium hydroxide or another aqueous liquid in a sealed vessel for from 18 hours to 5 days. The pressure developed within the vessel may be in the range 80 atm. to 500 atm. The initial powder mixture consists of particles sufficiently small to pass through a 300 mesh sieve (B.S.S.). Minor proportions of other elements can be included in the initial powder mixture and hence in the product XZ, for influencing the semi-conducting or other properties thereof.
GB2757160A 1960-08-09 1960-08-09 Improvements in or relating to the manufacture of semi-conductor materials Expired GB919048A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2757160A GB919048A (en) 1960-08-09 1960-08-09 Improvements in or relating to the manufacture of semi-conductor materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2757160A GB919048A (en) 1960-08-09 1960-08-09 Improvements in or relating to the manufacture of semi-conductor materials

Publications (1)

Publication Number Publication Date
GB919048A true GB919048A (en) 1963-02-20

Family

ID=10261789

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2757160A Expired GB919048A (en) 1960-08-09 1960-08-09 Improvements in or relating to the manufacture of semi-conductor materials

Country Status (1)

Country Link
GB (1) GB919048A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3771970A (en) * 1970-02-02 1973-11-13 Tyco Laboratories Inc Method of producing cadmium telluride crystals
US3852404A (en) * 1972-10-24 1974-12-03 Hercules Inc Preparation of crystalline sulfides and selenides of cadmium zinc and mercury

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3771970A (en) * 1970-02-02 1973-11-13 Tyco Laboratories Inc Method of producing cadmium telluride crystals
US3852404A (en) * 1972-10-24 1974-12-03 Hercules Inc Preparation of crystalline sulfides and selenides of cadmium zinc and mercury

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