GB907855A - Process for the production of high purity silicon - Google Patents
Process for the production of high purity siliconInfo
- Publication number
- GB907855A GB907855A GB1704960A GB1704960A GB907855A GB 907855 A GB907855 A GB 907855A GB 1704960 A GB1704960 A GB 1704960A GB 1704960 A GB1704960 A GB 1704960A GB 907855 A GB907855 A GB 907855A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- metal
- effected
- molten
- dissolution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
<PICT:0907855/III/1> High-purity silicon is recovered from a solution of silicon and impurities in molten antimony, silver, bismuth, cadmium, gallium, indium, or zinc obtained by dissolving already produced silicon in the molten metal or by producing silicon in the presence of the molten metal, by distilling off the metal and the impurities under vacuum, e.g. at 1 micron of mercury. Already produced silicon may have a purity of 92-93%. Silicon may be produced by reducing a fluorosilicate of an alkali metal or an alkaline earth metal with sodium, potassium, calcium or magnesium. The reduction may be effected in the presence of a fluoride of an alkali metal or an alkaline earth metal as flux at 480 DEG -550 DEG C. Dissolution may be completed at 1200 DEG -1300 DEG C. Reduction and dissolution may be effected in a graphite crucible in an atmosphere of argon. Most of the solvent metal may be removed before the final distillation by filtration, chemical treatment, or pre-distillation. The chemical treatment may be effected with aqua regia, hydrochloric acid, or nitric acid. The final distillation may be effected in a silica crucible. Silica fragments may be removed from the product by treatment with boiling hydrofluoric acid. The product may then be washed with distilled water and alcohol and dried at 100 DEG C.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR794595A FR1234746A (en) | 1959-05-13 | 1959-05-13 | Very high purity silicon preparation process |
FR824255A FR77520E (en) | 1959-05-13 | 1960-04-13 | Very high purity silicon preparation process |
Publications (1)
Publication Number | Publication Date |
---|---|
GB907855A true GB907855A (en) | 1962-10-10 |
Family
ID=26184015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1704960A Expired GB907855A (en) | 1959-05-13 | 1960-05-13 | Process for the production of high purity silicon |
Country Status (7)
Country | Link |
---|---|
BE (1) | BE590293A (en) |
CH (1) | CH421064A (en) |
DE (1) | DE1122501B (en) |
FR (2) | FR77520E (en) |
GB (1) | GB907855A (en) |
LU (1) | LU38582A1 (en) |
NL (2) | NL134280C (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3322503A (en) * | 1964-05-20 | 1967-05-30 | Bloom Harry | Silicon production process |
US4193975A (en) * | 1977-11-21 | 1980-03-18 | Union Carbide Corporation | Process for the production of improved refined metallurgical silicon |
US4193974A (en) * | 1977-11-21 | 1980-03-18 | Union Carbide Corporation | Process for producing refined metallurgical silicon ribbon |
US4195067A (en) * | 1977-11-21 | 1980-03-25 | Union Carbide Corporation | Process for the production of refined metallurgical silicon |
US4241037A (en) * | 1978-11-09 | 1980-12-23 | Montedison S.P.A. | Process for purifying silicon |
US4304763A (en) * | 1979-08-16 | 1981-12-08 | Consortium Fur Elektrochemische Industrie Gmbh | Process for purifying metallurgical-grade silicon |
US4388286A (en) * | 1982-01-27 | 1983-06-14 | Atlantic Richfield Company | Silicon purification |
US4415545A (en) * | 1980-12-15 | 1983-11-15 | Monkowski Joseph R | Solid film growth via preferential etching of liquid solutions |
EP2709952A1 (en) * | 2011-05-16 | 2014-03-26 | Boston Silicon Materials LLC | Manufacturing and applications of silicon metal |
CN113648672A (en) * | 2021-09-01 | 2021-11-16 | 云南锡业集团(控股)有限责任公司研发中心 | Distillation and condensation device and preparation method of ultra-high purity indium |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0098297A1 (en) * | 1982-01-05 | 1984-01-18 | Sri International | Process and apparatus for obtaining silicon from fluosilicic acid |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT159886B (en) * | 1936-09-28 | 1940-12-10 | Gewerkschaft Leubsdorf | Process for the extraction of amorphous, elemental silicon. |
DE754539C (en) * | 1938-08-16 | 1955-03-07 | Hermann Possekel | Process for the production of amorphous silicon |
-
0
- NL NL251604D patent/NL251604A/xx unknown
- LU LU38582D patent/LU38582A1/xx unknown
- NL NL134280D patent/NL134280C/xx active
- FR FR251604D patent/FR251604A/fr active Active
-
1960
- 1960-04-13 FR FR824255A patent/FR77520E/en not_active Expired
- 1960-04-28 BE BE590293A patent/BE590293A/en unknown
- 1960-05-13 GB GB1704960A patent/GB907855A/en not_active Expired
- 1960-05-13 CH CH551360A patent/CH421064A/en unknown
- 1960-05-13 DE DEA34635A patent/DE1122501B/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3322503A (en) * | 1964-05-20 | 1967-05-30 | Bloom Harry | Silicon production process |
US4193975A (en) * | 1977-11-21 | 1980-03-18 | Union Carbide Corporation | Process for the production of improved refined metallurgical silicon |
US4193974A (en) * | 1977-11-21 | 1980-03-18 | Union Carbide Corporation | Process for producing refined metallurgical silicon ribbon |
US4195067A (en) * | 1977-11-21 | 1980-03-25 | Union Carbide Corporation | Process for the production of refined metallurgical silicon |
US4241037A (en) * | 1978-11-09 | 1980-12-23 | Montedison S.P.A. | Process for purifying silicon |
US4304763A (en) * | 1979-08-16 | 1981-12-08 | Consortium Fur Elektrochemische Industrie Gmbh | Process for purifying metallurgical-grade silicon |
US4415545A (en) * | 1980-12-15 | 1983-11-15 | Monkowski Joseph R | Solid film growth via preferential etching of liquid solutions |
US4388286A (en) * | 1982-01-27 | 1983-06-14 | Atlantic Richfield Company | Silicon purification |
EP2709952A1 (en) * | 2011-05-16 | 2014-03-26 | Boston Silicon Materials LLC | Manufacturing and applications of silicon metal |
CN103702937A (en) * | 2011-05-16 | 2014-04-02 | 波士顿硅材料有限公司 | Manufacturing and applications of silicon metal |
EP2709952A4 (en) * | 2011-05-16 | 2014-12-10 | Boston Silicon Materials Llc | Manufacturing and applications of silicon metal |
CN113648672A (en) * | 2021-09-01 | 2021-11-16 | 云南锡业集团(控股)有限责任公司研发中心 | Distillation and condensation device and preparation method of ultra-high purity indium |
Also Published As
Publication number | Publication date |
---|---|
DE1122501B (en) | 1962-01-25 |
FR251604A (en) | |
LU38582A1 (en) | |
BE590293A (en) | 1960-08-16 |
CH421064A (en) | 1966-09-30 |
NL251604A (en) | |
FR77520E (en) | 1962-03-16 |
NL134280C (en) |
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