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GB899688A - An automatically controlled process for melting a rod of semi-conductor material zone-by-zone - Google Patents

An automatically controlled process for melting a rod of semi-conductor material zone-by-zone

Info

Publication number
GB899688A
GB899688A GB21453/60A GB2145360A GB899688A GB 899688 A GB899688 A GB 899688A GB 21453/60 A GB21453/60 A GB 21453/60A GB 2145360 A GB2145360 A GB 2145360A GB 899688 A GB899688 A GB 899688A
Authority
GB
United Kingdom
Prior art keywords
rod
diameter
zone
current
variation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21453/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB899688A publication Critical patent/GB899688A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/06—Control, e.g. of temperature, of power
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

<PICT:0899688/III/1> <PICT:0899688/III/2> In the zone-refining of a rod by passing an induction heating coil over the rod, the diameter of the molten zone is controlled at a desired value at a particular point in its passage by utilizing deviation in the strength of the current passing through the coil from a predetermined value corresponding to the desired diameter to compress or draw apart the two ends of the rod. The molten zone may be passed upwards at a constant speed through a vertical rod after passage through a seed of smaller diameter fused to the rod under such conditions that the difference in diameter is maintained. The portion of the rod below the molten zone may be rotated. As shown in Fig. 1, a variable high frequency generator 9 feeds a heating coil 5 having a capacitor 7 in parallel therewith and relative movement is effected between the coil and a rod 2 by means not shown. The generator has a discharge device (not shown) which produces an anode current and a voltage drop across a variable resistance 13 connected in series opposition to a battery 14. On variation of the rod diameter from a desired constant value, variation in the anode current operates polarized relay 15 which causes electric motor 17 to effect upward or downward movement of rod holder 4 through the medium of toothed wheel 18 and toothed rack 19 to counteract the variation. As shown in Fig. 4, the generator frequency and heater current are varied in accordance with the preset programme illustrated in Fig. 3 (not shown) to maintain a seed crystal of reduced diameter, continuous upward movement of heating coil 5 being effected by electric motor 116 through the medium of toothed wheel 115, toothed rack 114, and insulated carrier 113, electric motor 116 at the same time effecting continuous rotation of current wipers 128 and 129 relative to a series of capacitors 125 and a voltage divider 131 respectively to effect variation in frequency and current respectively. Specification 888,148 is referred to.
GB21453/60A 1959-08-17 1960-06-17 An automatically controlled process for melting a rod of semi-conductor material zone-by-zone Expired GB899688A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES64464A DE1215109B (en) 1959-08-17 1959-08-17 Method for crucible-free zone melting of semiconductor material
DES66492A DE1277813B (en) 1959-08-17 1959-12-31 Method for crucible-free zone melting of semiconductor material

Publications (1)

Publication Number Publication Date
GB899688A true GB899688A (en) 1962-06-27

Family

ID=25995811

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21453/60A Expired GB899688A (en) 1959-08-17 1960-06-17 An automatically controlled process for melting a rod of semi-conductor material zone-by-zone

Country Status (6)

Country Link
US (1) US3265470A (en)
BE (1) BE594105A (en)
CH (1) CH389249A (en)
DE (2) DE1215109B (en)
GB (1) GB899688A (en)
NL (2) NL252591A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3321299A (en) * 1964-10-13 1967-05-23 Monsanto Co Apparatus and process for preparing semiconductor rods
DK116145B (en) * 1965-07-09 1969-12-15 Siemens Ag Plant for inductive heating of semiconductor material.
NL6512921A (en) * 1965-10-06 1967-04-07
US3446602A (en) * 1965-11-13 1969-05-27 Nippon Electric Co Flame fusion crystal growing employing vertically displaceable pedestal responsive to temperature
US3660062A (en) * 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material
US3776703A (en) * 1970-11-30 1973-12-04 Texas Instruments Inc Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil
DE2220519C3 (en) * 1972-04-26 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Process for crucible-free zone melting of semiconductor rods
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
DK142586B (en) * 1977-07-07 1980-11-24 Topsil As Apparatus for zone melting of a semiconductor rod.
US4857689A (en) * 1988-03-23 1989-08-15 High Temperature Engineering Corporation Rapid thermal furnace for semiconductor processing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2470443A (en) * 1944-07-21 1949-05-17 Mittelmann Eugene Means for and method of continuously matching and controlling power for high-frequency heating of reactive loads
US2508321A (en) * 1945-09-05 1950-05-16 Raymond M Wilmotte Method and means of controlling electronic heating
US2691732A (en) * 1948-12-07 1954-10-12 Westinghouse Electric Corp Radio frequency generator
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2868902A (en) * 1958-03-19 1959-01-13 Prec Metalsmiths Inc Induction heater control
DE1153908B (en) * 1958-04-22 1963-09-05 Siemens Ag Method and device for crucible-free zone melting with changing the spacing of the rod ends
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil

Also Published As

Publication number Publication date
DE1277813B (en) 1968-09-19
NL252591A (en)
CH389249A (en) 1965-03-15
BE594105A (en)
NL135666C (en)
US3265470A (en) 1966-08-09
DE1215109B (en) 1966-04-28

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