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GB889782A - Improvements in or relating to semi-conductor devices - Google Patents

Improvements in or relating to semi-conductor devices

Info

Publication number
GB889782A
GB889782A GB27401/60A GB2740160A GB889782A GB 889782 A GB889782 A GB 889782A GB 27401/60 A GB27401/60 A GB 27401/60A GB 2740160 A GB2740160 A GB 2740160A GB 889782 A GB889782 A GB 889782A
Authority
GB
United Kingdom
Prior art keywords
conductor
semi
pressure
crystal
soldered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27401/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB889782A publication Critical patent/GB889782A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02—Soldered or welded connections
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    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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    • H01L2224/7825—Means for applying energy, e.g. heating means
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)

Abstract

889,782. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Aug. 8, 1960 [Aug. 11, 1959], No. 27401/60. Class 37. In a method in which a conductor is secured to a semi-conductor crystal by thermo-pressure, i.e. by pressure and heating to between 100‹ C. and the eutectic temperature of the conductor and the semi-conductor, the crystal is first soldered in position on a carrier plate. The pressure may be between 350 and 700 kgms/cm.<2>. Fig. 2 shows a silicon crystal wafer 1 soldered by a layer 3 comprising tin and antimony to a nickel carrier plate 2. An aluminium wire 6 is pressed on to the silicon in hydrogen, by die 7 while the whole is heated to 325‹ C. by element 5. Fig. 3 shows the final form of the device, and the invention is applicable to diodes, transistors and photo-electric arrangements.
GB27401/60A 1959-08-11 1960-08-08 Improvements in or relating to semi-conductor devices Expired GB889782A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL242227 1959-08-11

Publications (1)

Publication Number Publication Date
GB889782A true GB889782A (en) 1962-02-21

Family

ID=19751869

Family Applications (1)

Application Number Title Priority Date Filing Date
GB27401/60A Expired GB889782A (en) 1959-08-11 1960-08-08 Improvements in or relating to semi-conductor devices

Country Status (3)

Country Link
DE (1) DE1153118B (en)
GB (1) GB889782A (en)
NL (2) NL108787C (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1194115A (en) * 1957-04-03 1959-11-06

Also Published As

Publication number Publication date
NL242227A (en) 1900-01-01
DE1153118B (en) 1963-08-22
NL108787C (en) 1900-01-01

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