GB8819752D0 - Apparatus & method for depositing surface layers on substrates - Google Patents
Apparatus & method for depositing surface layers on substratesInfo
- Publication number
- GB8819752D0 GB8819752D0 GB888819752A GB8819752A GB8819752D0 GB 8819752 D0 GB8819752 D0 GB 8819752D0 GB 888819752 A GB888819752 A GB 888819752A GB 8819752 A GB8819752 A GB 8819752A GB 8819752 D0 GB8819752 D0 GB 8819752D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrates
- surface layers
- depositing surface
- depositing
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000151 deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 239000002344 surface layer Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB878719794A GB8719794D0 (en) | 1987-08-21 | 1987-08-21 | Depositing surface layers on substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
GB8819752D0 true GB8819752D0 (en) | 1988-09-21 |
GB2208875A GB2208875A (en) | 1989-04-19 |
Family
ID=10622612
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB878719794A Pending GB8719794D0 (en) | 1987-08-21 | 1987-08-21 | Depositing surface layers on substrates |
GB8819752A Withdrawn GB2208875A (en) | 1987-08-21 | 1988-08-19 | Depositing surface layers using ion beans |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB878719794A Pending GB8719794D0 (en) | 1987-08-21 | 1987-08-21 | Depositing surface layers on substrates |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB8719794D0 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03111578A (en) * | 1989-06-29 | 1991-05-13 | Toshiba Corp | Method for forming thin film and device for forming thin film |
DE69430230T2 (en) * | 1993-10-14 | 2002-10-31 | Mega Chips Corp., Osaka | Method and device for producing a single-crystal thin film |
US5797987A (en) * | 1995-12-14 | 1998-08-25 | Ppg Industries, Inc. | Zinc phosphate conversion coating compositions and process |
US7229675B1 (en) | 2000-02-17 | 2007-06-12 | Anatoly Nikolaevich Paderov | Protective coating method for pieces made of heat resistant alloys |
WO2001061067A1 (en) * | 2000-02-17 | 2001-08-23 | Anatoly Nikolaevich Paderov | Combined protective coating of parts made of heat resisting alloys |
CN115572950B (en) * | 2022-10-14 | 2024-07-16 | 苏州岚创科技有限公司 | Multi-ion source synchronous sputtering coating device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1515318A1 (en) * | 1964-12-28 | 1969-07-31 | Hermsdorf Keramik Veb | Device for the production of thin layers on a carrier by means of ion beam atomization |
US4346301A (en) * | 1979-07-30 | 1982-08-24 | Hughes Aircraft Company | Ion implantation system |
DE61906T1 (en) * | 1981-03-26 | 1983-05-26 | Inoue-Japax Research Inc., Yokohama, Kanagawa | METHOD AND DEVICE FOR PROCESSING A WORKPIECE WITH ENERGY-RICH PARTICLES, AND A PRODUCT PROCESSED IN THIS WAY. |
US4468415A (en) * | 1981-03-30 | 1984-08-28 | Asahi Kasei Kogyo Kabushiki Kaisha | Indium-antimony complex crystal semiconductor and process for production thereof |
US4520039A (en) * | 1982-09-23 | 1985-05-28 | Sovonics Solar Systems | Compositionally varied materials and method for synthesizing the materials |
FR2550008B1 (en) * | 1983-07-27 | 1987-04-24 | American Telephone & Telegraph | EPITAXIAL GROWTH METHOD WITH SPATIAL SELECTIVITY USING ION BEAMS |
JPS63502542A (en) * | 1985-08-07 | 1988-09-22 | オ−ストラリア国 | Controlling the uniformity of growing alloy thin films |
JPS6261315A (en) * | 1985-09-11 | 1987-03-18 | Sharp Corp | Molecular beam epitaxy device |
WO1987002713A1 (en) * | 1985-10-31 | 1987-05-07 | Ncr Corporation | A method for forming an abrasion resistant coating on a transparent substrate |
US4888202A (en) * | 1986-07-31 | 1989-12-19 | Nippon Telegraph And Telephone Corporation | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
-
1987
- 1987-08-21 GB GB878719794A patent/GB8719794D0/en active Pending
-
1988
- 1988-08-19 GB GB8819752A patent/GB2208875A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2208875A (en) | 1989-04-19 |
GB8719794D0 (en) | 1987-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |