Classifications

• • H—ELECTRICITY
  • H04—ELECTRIC COMMUNICATION TECHNIQUE
  • H04M—TELEPHONIC COMMUNICATION
  • H04M3/00—Automatic or semi-automatic exchanges
  • H04M3/22—Arrangements for supervision, monitoring or testing
  • H04M3/26—Arrangements for supervision, monitoring or testing with means for applying test signals or for measuring
  • H04M3/28—Automatic routine testing ; Fault testing; Installation testing; Test methods, test equipment or test arrangements therefor
  • H04M3/30—Automatic routine testing ; Fault testing; Installation testing; Test methods, test equipment or test arrangements therefor for subscriber's lines, for the local loop
  • H04M3/301—Circuit arrangements at the subscriber's side of the line
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/30—Modifications for providing a predetermined threshold before switching
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D8/00—Diodes
  • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
  • H10D84/131—Thyristors having built-in components
  • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
  • H10D84/131—Thyristors having built-in components
  • H10D84/135—Thyristors having built-in components the built-in components being diodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
  • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
  • H10D84/617—Combinations of vertical BJTs and only diodes

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• Engineering & Computer Science (AREA)
• Signal Processing (AREA)
• Bipolar Integrated Circuits (AREA)

Priority Applications (3)

Applications Claiming Priority (1)

Publications (3)

Family

ID=10640980

Family Applications (1)

Country Status (2)

Families Citing this family (3)

Family Cites Families (1)

• 1988
  • 1988-07-22 GB GB8817574A patent/GB2221088B/en not_active Expired - Fee Related
• 1989
  • 1989-07-21 CA CA000606343A patent/CA1303245C/en not_active Expired - Lifetime

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