GB878766A - Improvements in and relating to the production of a chemical element by the dissociation of a gaseous hydride thereof - Google Patents
Improvements in and relating to the production of a chemical element by the dissociation of a gaseous hydride thereofInfo
- Publication number
- GB878766A GB878766A GB642357A GB642357A GB878766A GB 878766 A GB878766 A GB 878766A GB 642357 A GB642357 A GB 642357A GB 642357 A GB642357 A GB 642357A GB 878766 A GB878766 A GB 878766A
- Authority
- GB
- United Kingdom
- Prior art keywords
- production
- dissociation
- relating
- chemical element
- gaseous hydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C01B33/043—Monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
In the production of silicon by the thermal decomposition of silane produced by the method of Specification 878,763 (i.e. by the reaction of magnesium silicide with a solution of ammonium bromide in liquid ammonia followed by fractional distillation) the production of the silane is carried out in an apparatus surrounded by an inert gas, e.g. argon or nitrogen. The apparatus may be in a container in which inert gas under pressure is connected to the atmosphere via a water trap. Specifications 878,764 and 878,765 also are referred to.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE566605D BE566605A (en) | 1957-02-26 | ||
GB642357A GB878766A (en) | 1957-02-26 | 1957-02-26 | Improvements in and relating to the production of a chemical element by the dissociation of a gaseous hydride thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB642357A GB878766A (en) | 1957-02-26 | 1957-02-26 | Improvements in and relating to the production of a chemical element by the dissociation of a gaseous hydride thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
GB878766A true GB878766A (en) | 1961-10-04 |
Family
ID=9814228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB642357A Expired GB878766A (en) | 1957-02-26 | 1957-02-26 | Improvements in and relating to the production of a chemical element by the dissociation of a gaseous hydride thereof |
Country Status (2)
Country | Link |
---|---|
BE (1) | BE566605A (en) |
GB (1) | GB878766A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1886971A1 (en) * | 2006-08-08 | 2008-02-13 | Wacker Chemie AG | Method and device for producing highly pure polycrystalline silicon with a reduced dopant content |
-
0
- BE BE566605D patent/BE566605A/xx unknown
-
1957
- 1957-02-26 GB GB642357A patent/GB878766A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1886971A1 (en) * | 2006-08-08 | 2008-02-13 | Wacker Chemie AG | Method and device for producing highly pure polycrystalline silicon with a reduced dopant content |
US7927571B2 (en) | 2006-08-08 | 2011-04-19 | Wacker Chemie Ag | Method and device for producing high purity polycrystalline silicon with a reduced dopant content |
Also Published As
Publication number | Publication date |
---|---|
BE566605A (en) |
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