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GB8723676D0 - Manufacturing component - Google Patents

Manufacturing component

Info

Publication number
GB8723676D0
GB8723676D0 GB878723676A GB8723676A GB8723676D0 GB 8723676 D0 GB8723676 D0 GB 8723676D0 GB 878723676 A GB878723676 A GB 878723676A GB 8723676 A GB8723676 A GB 8723676A GB 8723676 D0 GB8723676 D0 GB 8723676D0
Authority
GB
United Kingdom
Prior art keywords
manufacturing component
manufacturing
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB878723676A
Other versions
GB2196476B (en
GB2196476A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMI Group Ltd
Original Assignee
Thorn EMI PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thorn EMI PLC filed Critical Thorn EMI PLC
Publication of GB8723676D0 publication Critical patent/GB8723676D0/en
Publication of GB2196476A publication Critical patent/GB2196476A/en
Application granted granted Critical
Publication of GB2196476B publication Critical patent/GB2196476B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
GB8723676A 1986-10-14 1987-10-08 A method for manufacturing a component and a component produced by the method Expired - Lifetime GB2196476B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB868624637A GB8624637D0 (en) 1986-10-14 1986-10-14 Electrical device

Publications (3)

Publication Number Publication Date
GB8723676D0 true GB8723676D0 (en) 1987-11-11
GB2196476A GB2196476A (en) 1988-04-27
GB2196476B GB2196476B (en) 1990-02-14

Family

ID=10605738

Family Applications (2)

Application Number Title Priority Date Filing Date
GB868624637A Pending GB8624637D0 (en) 1986-10-14 1986-10-14 Electrical device
GB8723676A Expired - Lifetime GB2196476B (en) 1986-10-14 1987-10-08 A method for manufacturing a component and a component produced by the method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB868624637A Pending GB8624637D0 (en) 1986-10-14 1986-10-14 Electrical device

Country Status (1)

Country Link
GB (2) GB8624637D0 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2562840B2 (en) * 1988-08-01 1996-12-11 富士通株式会社 Field effect transistor
US6551784B2 (en) 1989-06-07 2003-04-22 Affymetrix Inc Method of comparing nucleic acid sequences
US5424186A (en) 1989-06-07 1995-06-13 Affymax Technologies N.V. Very large scale immobilized polymer synthesis
US6919211B1 (en) 1989-06-07 2005-07-19 Affymetrix, Inc. Polypeptide arrays
US5143854A (en) 1989-06-07 1992-09-01 Affymax Technologies N.V. Large scale photolithographic solid phase synthesis of polypeptides and receptor binding screening thereof
US6346413B1 (en) 1989-06-07 2002-02-12 Affymetrix, Inc. Polymer arrays
US5744101A (en) 1989-06-07 1998-04-28 Affymax Technologies N.V. Photolabile nucleoside protecting groups
US6379895B1 (en) 1989-06-07 2002-04-30 Affymetrix, Inc. Photolithographic and other means for manufacturing arrays
US6406844B1 (en) 1989-06-07 2002-06-18 Affymetrix, Inc. Very large scale immobilized polymer synthesis
US5800992A (en) 1989-06-07 1998-09-01 Fodor; Stephen P.A. Method of detecting nucleic acids
US6955915B2 (en) 1989-06-07 2005-10-18 Affymetrix, Inc. Apparatus comprising polymers
US6309822B1 (en) 1989-06-07 2001-10-30 Affymetrix, Inc. Method for comparing copy number of nucleic acid sequences
US6506558B1 (en) 1990-03-07 2003-01-14 Affymetrix Inc. Very large scale immobilized polymer synthesis
EP0834575B1 (en) 1990-12-06 2001-11-28 Affymetrix, Inc. (a Delaware Corporation) Identification of nucleic acids in samples
US6468740B1 (en) 1992-11-05 2002-10-22 Affymetrix, Inc. Cyclic and substituted immobilized molecular synthesis
US7323298B1 (en) 1994-06-17 2008-01-29 The Board Of Trustees Of The Leland Stanford Junior University Microarray for determining the relative abundances of polynuceotide sequences
US7378236B1 (en) 1994-06-17 2008-05-27 The Board Of Trustees Of The Leland Stanford Junior University Method for analyzing gene expression patterns
US7625697B2 (en) 1994-06-17 2009-12-01 The Board Of Trustees Of The Leland Stanford Junior University Methods for constructing subarrays and subarrays made thereby
US6545264B1 (en) 1998-10-30 2003-04-08 Affymetrix, Inc. Systems and methods for high performance scanning

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1048424A (en) * 1963-08-28 1966-11-16 Int Standard Electric Corp Improvements in or relating to semiconductor devices
USB492339I5 (en) * 1965-10-01
US3616401A (en) * 1966-06-30 1971-10-26 Texas Instruments Inc Sputtered multilayer ohmic molygold contacts for semiconductor devices
US3667005A (en) * 1966-06-30 1972-05-30 Texas Instruments Inc Ohmic contacts for semiconductors devices
US3502950A (en) * 1967-06-20 1970-03-24 Bell Telephone Labor Inc Gate structure for insulated gate field effect transistor
US3924265A (en) * 1973-08-29 1975-12-02 American Micro Syst Low capacitance V groove MOS NOR gate and method of manufacture
DE2706623A1 (en) * 1977-02-16 1978-08-17 Siemens Ag MIS-FET FOR HIGH SOURCE DRAIN VOLTAGES
IT1212404B (en) * 1979-02-22 1989-11-22 Rca Corp METHOD OF A SINGLE ATTACK FOR THE FORMATION OF A MESA PRESENTING A MULTIPLE WALL.
DE3012430A1 (en) * 1980-03-31 1981-10-08 Siemens AG, 1000 Berlin und 8000 München PLANAR SEMICONDUCTOR ARRANGEMENT WITH INCREASED BREAKTHROUGH VOLTAGE
NL8103218A (en) * 1981-07-06 1983-02-01 Philips Nv FIELD-EFFECT TRANSISTOR WITH INSULATED HANDLEBAR ELECTRODE.

Also Published As

Publication number Publication date
GB8624637D0 (en) 1986-11-19
GB2196476B (en) 1990-02-14
GB2196476A (en) 1988-04-27

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19991008