GB8601830D0 - Fabricated transistors - Google Patents

Fabricated transistors

Info

Publication number: GB8601830D0
Authority: GB; United Kingdom
Prior art keywords: fabricated transistors; fabricated; transistors
Prior art date: 1986-01-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

GB868601830A

Other versions

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Plessey Co Ltd

Original Assignee

Plessey Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-01-25

Filing date

1986-01-25

Publication date

1986-02-26

1986-01-25 Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd

1986-01-25 Priority to GB08601830A priority Critical patent/GB2185851A/en

1986-02-26 Publication of GB8601830D0 publication Critical patent/GB8601830D0/en

1987-01-19 Priority to JP62500890A priority patent/JPS63502544A/en

1987-01-19 Priority to EP87900849A priority patent/EP0258285A1/en

1987-01-19 Priority to PCT/GB1987/000030 priority patent/WO1987004563A1/en

1987-07-29 Publication of GB2185851A publication Critical patent/GB2185851A/en

Status Withdrawn legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
- H10D30/0278—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline channels on wafers after forming insulating device isolations
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
- H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures

GB08601830A 1986-01-25 1986-01-25 Method of fabricating an mos transistor Withdrawn GB2185851A (en)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
GB08601830A GB2185851A (en)	1986-01-25	1986-01-25	Method of fabricating an mos transistor
JP62500890A JPS63502544A (en)	1986-01-25	1987-01-19	Transistor manufacturing method and MOS transistor manufactured by the same method
EP87900849A EP0258285A1 (en)	1986-01-25	1987-01-19	Methods for fabricating transistors and mos transistors fabricated by such methods
PCT/GB1987/000030 WO1987004563A1 (en)	1986-01-25	1987-01-19	Methods for fabricating transistors and mos transistors fabricated by such methods

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB08601830A GB2185851A (en)	1986-01-25	1986-01-25	Method of fabricating an mos transistor

Publications (2)

Publication Number	Publication Date
GB8601830D0 true GB8601830D0 (en)	1986-02-26
GB2185851A GB2185851A (en)	1987-07-29

Family

ID=10591944

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08601830A Withdrawn GB2185851A (en)	1986-01-25	1986-01-25	Method of fabricating an mos transistor

Country Status (4)

Country	Link
EP (1)	EP0258285A1 (en)
JP (1)	JPS63502544A (en)
GB (1)	GB2185851A (en)
WO (1)	WO1987004563A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5021119A (en) *	1987-11-13	1991-06-04	Kopin Corporation	Zone-melting recrystallization process
US4863877A (en) *	1987-11-13	1989-09-05	Kopin Corporation	Ion implantation and annealing of compound semiconductor layers
US5453153A (en) *	1987-11-13	1995-09-26	Kopin Corporation	Zone-melting recrystallization process
CN1395316A (en) *	2001-07-04	2003-02-05	松下电器产业株式会社	Semiconductor device and its manufacturing method
US20230420546A1 (en) *	2022-06-24	2023-12-28	Nxp Usa, Inc.	Transistor with current terminal regions and channel region in layer over dielectric

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3764413A (en) *	1970-11-25	1973-10-09	Nippon Electric Co	Method of producing insulated gate field effect transistors
JPS49112574A (en) *	1973-02-24	1974-10-26
JPS54881A (en) *	1977-06-03	1979-01-06	Fujitsu Ltd	Semiconductor device
US4269631A (en) *	1980-01-14	1981-05-26	International Business Machines Corporation	Selective epitaxy method using laser annealing for making filamentary transistors
JPS5861622A (en) *	1981-10-09	1983-04-12	Hitachi Ltd	Manufacture of single crystal thin film
EP0077737A3 (en) *	1981-10-19	1984-11-07	FAIRCHILD CAMERA & INSTRUMENT CORPORATION	Low capacitance field effect transistor
US4476475A (en) *	1982-11-19	1984-10-09	Northern Telecom Limited	Stacked MOS transistor
JPS59195871A (en) *	1983-04-20	1984-11-07	Mitsubishi Electric Corp	Manufacture of metal oxide semiconductor field-effect transistor

1986
- 1986-01-25 GB GB08601830A patent/GB2185851A/en not_active Withdrawn
1987
- 1987-01-19 JP JP62500890A patent/JPS63502544A/en active Pending
- 1987-01-19 WO PCT/GB1987/000030 patent/WO1987004563A1/en not_active Application Discontinuation
- 1987-01-19 EP EP87900849A patent/EP0258285A1/en not_active Withdrawn

Also Published As

Publication number	Publication date
GB2185851A (en)	1987-07-29
JPS63502544A (en)	1988-09-22
EP0258285A1 (en)	1988-03-09
WO1987004563A1 (en)	1987-07-30

Publication	Publication Date	Title
EP0233725A3 (en)	1988-07-20	Field effect transistor
EP0247386A3 (en)	1988-03-16	Lateral transistor
EP0249204A3 (en)	1988-05-18	Field effect transistor
EP0306258A3 (en)	1989-10-18	Transistor
CS306786A1 (en)	1987-12-17	Rezonator laseru se zmenou frekvence zareni
GB8819748D0 (en)	1988-09-21	Transistor
AR243507A1 (en)	1993-08-31	Certain 3-benzoyl-4-oxolactams
KR960003369B1 (en)	1996-03-09	Transistor arrangement
ZA87522B (en)	1987-10-28	Tube-coupling
GB8601830D0 (en)	1986-02-26	Fabricated transistors
GB8828496D0 (en)	1989-01-11	Gate
GB8611580D0 (en)	1986-06-18	Transistors
GB8619426D0 (en)	1986-09-17	Transistor
GB8611574D0 (en)	1986-06-18	Transistors
GB8630940D0 (en)	1987-02-04	Transistor
CS358086A1 (en)	1987-09-17	Zpusob pripravy aromatickych n glycidylaminu
ZA875106B (en)	1988-02-24	Ointment
GB8625770D0 (en)	1986-12-03	Field effect transistors
GB8626741D0 (en)	1986-12-10	Making isolated transistor devices
CS936586A1 (en)	1988-03-15	Zpusob ziskavani n alkylmorfolinu
CS26086A1 (en)	1987-05-14	Sposob vyroby n cyklohexyltioftalimidu
GB8719841D0 (en)	1987-09-30	Transistor
ZA874099B (en)	1988-03-30	Certain 3-benzoyl-4-oxolactams
CS323486A1 (en)	1987-02-12	Rotacni brousici kotouc se zasobnikem
CS705186A1 (en)	1987-07-16	Uzaver bubnu odstredivky se spodnim vyprazdnovanim

Legal Events

Date	Code	Title	Description
1990-11-28	WAP	Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)