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GB8525848D0 - Transistors - Google Patents

Transistors

Info

Publication number
GB8525848D0
GB8525848D0 GB858525848A GB8525848A GB8525848D0 GB 8525848 D0 GB8525848 D0 GB 8525848D0 GB 858525848 A GB858525848 A GB 858525848A GB 8525848 A GB8525848 A GB 8525848A GB 8525848 D0 GB8525848 D0 GB 8525848D0
Authority
GB
United Kingdom
Prior art keywords
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB858525848A
Other versions
GB2181889A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GE Healthcare UK Ltd
Original Assignee
GE Healthcare UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GE Healthcare UK Ltd filed Critical GE Healthcare UK Ltd
Priority to GB08525848A priority Critical patent/GB2181889A/en
Publication of GB8525848D0 publication Critical patent/GB8525848D0/en
Priority to PCT/GB1986/000643 priority patent/WO1987002510A1/en
Priority to EP86906377A priority patent/EP0244452A1/en
Publication of GB2181889A publication Critical patent/GB2181889A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
GB08525848A 1985-10-19 1985-10-19 Improvements relating to bipolar transistors Withdrawn GB2181889A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB08525848A GB2181889A (en) 1985-10-19 1985-10-19 Improvements relating to bipolar transistors
PCT/GB1986/000643 WO1987002510A1 (en) 1985-10-19 1986-10-20 Subcollector for bipolar transistors
EP86906377A EP0244452A1 (en) 1985-10-19 1986-10-20 Subcollector for bipolar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08525848A GB2181889A (en) 1985-10-19 1985-10-19 Improvements relating to bipolar transistors

Publications (2)

Publication Number Publication Date
GB8525848D0 true GB8525848D0 (en) 1985-11-20
GB2181889A GB2181889A (en) 1987-04-29

Family

ID=10586959

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08525848A Withdrawn GB2181889A (en) 1985-10-19 1985-10-19 Improvements relating to bipolar transistors

Country Status (3)

Country Link
EP (1) EP0244452A1 (en)
GB (1) GB2181889A (en)
WO (1) WO1987002510A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256896A (en) * 1991-08-30 1993-10-26 International Business Machines Corporation Polysilicon-collector-on-insulator polysilicon-emitter bipolar transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56167346A (en) * 1980-05-27 1981-12-23 Nec Corp Manufacture of semiconductor device
JPS58166739A (en) * 1982-03-29 1983-10-01 Hitachi Ltd Semiconductor device and its manufacture
JPS59165455A (en) * 1983-03-10 1984-09-18 Toshiba Corp Semiconductor device
JPS59181636A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd semiconductor equipment
JPS6072242A (en) * 1983-09-28 1985-04-24 Fujitsu Ltd Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
EP0244452A1 (en) 1987-11-11
WO1987002510A1 (en) 1987-04-23
GB2181889A (en) 1987-04-29

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)