GB849476A - Improvements in or relating to semiconductor control devices - Google Patents
Improvements in or relating to semiconductor control devicesInfo
- Publication number
- GB849476A GB849476A GB36841/55A GB3684155A GB849476A GB 849476 A GB849476 A GB 849476A GB 36841/55 A GB36841/55 A GB 36841/55A GB 3684155 A GB3684155 A GB 3684155A GB 849476 A GB849476 A GB 849476A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- voltage
- avalanche
- germanium
- antimony
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 10
- 229910052759 nickel Inorganic materials 0.000 abstract 5
- 229910052732 germanium Inorganic materials 0.000 abstract 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 4
- 229910052738 indium Inorganic materials 0.000 abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 3
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- FGSKFBCYWQLIET-UHFFFAOYSA-N [Sb].[Ge].[Au] Chemical group [Sb].[Ge].[Au] FGSKFBCYWQLIET-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 239000012634 fragment Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000013021 overheating Methods 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 235000005074 zinc chloride Nutrition 0.000 abstract 1
- 239000011592 zinc chloride Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Generation Of Surge Voltage And Current (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
849,476. Semi-conductor pulse circuits. NATIONAL RESEARCH DEVELOPMENT CORPORATION. Dec. 5, 1956 [Dec. 22, 1955], No. 36841/55. Class 40(6). [Also in Group XXXVI] An electric control device comprises a semiconductor body having a first base electrode and a second non-injecting alloy junction electrode of area less than 0À001 in<SP>2</SP>, whereby under saturated drift velocity conditions, avalanche injection of carriers occurs to provide a negative resistance region in the forward characteristic. Fig. 3(a) shows an N-type germanium body 3 with a nickel plate base electrode 6 joined by a tin-antimony solder layer 7 which provides an N+ layer 5. A non-injecting alloy electrode is provided by a dot 8 of tinantimony which produces an N+ layer 4. Etching is used to reduce the size of dot 8 before alloying. The device has a negative resistance region in its "forward" characteristic, i.e. with a positive voltage applied to dot electrode 8. Both the "onset" voltage at which the current suddenly decreases with increasing voltage, and the "sustaining voltage" are reduced by previous avalanche experience, but these may be restored by etching treatment. Fig. 3(b) shows a modification in which a nickel sheet base electrode 6 which acts as a cooling element, is indium soldered to an intrinsic germanium body 3 to provide a P+ region 10, and a gold-antimony wire 11 is used to form a second non-injecting electrode with a gold-antimony-germanium region 12 and an N+ region 13. At the minimum, the spacing between layers 13 and 10 is 40 Á; this must be related to the impurity concentration of the intrinsic material by a given function, which involves electronic charge, dielectric constant, the avalanche field and the sustaining voltage. In operation, avalanche injection occurs at both electrode regions in this embodiment, and the arrangement avoids overheating at the non- injecting electrode. The base electrode may be provided by placing a fragment of indium and a droplet of zinc chloride on a nickel strip, and pressing an etched wafer of germanium against the indium and nickel while heating the nickel plate. A gold wire with 0À5% antimony is then alloyed to the surface of the germanium at a temperature of 330C. Reference is made to the provision of a third electrode for triggering purposes. Fig. 7 shows a pulse generator, in which a coaxial cable 14 fed with primary pulses from a hydrogen thyratron (not shown) is connected to an open circuited length of coaxial cable (Z 0 = 75 ohms) 17 through resistor 18. Each primary pulse charges cable 17 until avalanche diode 20 reaches its "onset" voltage when cable 17 discharges through 20 to provide an output across load resistor 21. The avalanche diode could also be used in oscillators or in "dissected" amplifiers, or in voltage stabilizing circuits. Specification 727,900 is referred to.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DENDAT1067933D DE1067933B (en) | 1955-12-22 | Controlled semiconductor device with two electrodes. 1'9. 12. 56. Great Britain | |
| GB36841/55A GB849476A (en) | 1955-12-22 | 1955-12-22 | Improvements in or relating to semiconductor control devices |
| FR1169035D FR1169035A (en) | 1955-12-22 | 1956-12-21 | Semiconductor control devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB36841/55A GB849476A (en) | 1955-12-22 | 1955-12-22 | Improvements in or relating to semiconductor control devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB849476A true GB849476A (en) | 1960-09-28 |
Family
ID=10391612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB36841/55A Expired GB849476A (en) | 1955-12-22 | 1955-12-22 | Improvements in or relating to semiconductor control devices |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1067933B (en) |
| FR (1) | FR1169035A (en) |
| GB (1) | GB849476A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3365583A (en) * | 1963-06-10 | 1968-01-23 | Ibm | Electric field-responsive solid state devices |
| US3660733A (en) * | 1969-10-29 | 1972-05-02 | Fernando Zhozevich Vilf | Homogeneous semiconductor with interrelated antibarrier contacts |
| CN113536600A (en) * | 2021-08-17 | 2021-10-22 | 浙江大学 | An optimal design method for power module bonding line layout |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL84061C (en) * | 1948-06-26 | |||
| NL89623C (en) * | 1949-04-01 |
-
0
- DE DENDAT1067933D patent/DE1067933B/en active Pending
-
1955
- 1955-12-22 GB GB36841/55A patent/GB849476A/en not_active Expired
-
1956
- 1956-12-21 FR FR1169035D patent/FR1169035A/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3365583A (en) * | 1963-06-10 | 1968-01-23 | Ibm | Electric field-responsive solid state devices |
| US3660733A (en) * | 1969-10-29 | 1972-05-02 | Fernando Zhozevich Vilf | Homogeneous semiconductor with interrelated antibarrier contacts |
| CN113536600A (en) * | 2021-08-17 | 2021-10-22 | 浙江大学 | An optimal design method for power module bonding line layout |
| CN113536600B (en) * | 2021-08-17 | 2024-01-30 | 浙江大学 | Power module binding line layout optimization design method |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1067933B (en) | 1959-10-29 |
| FR1169035A (en) | 1958-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2816228A (en) | Semiconductor phase shift oscillator and device | |
| Gunn | Avalanche injection in semiconductors | |
| US3476989A (en) | Controlled rectifier semiconductor device | |
| GB810452A (en) | Improvements in or relating to signal translating apparatus and circuits employing semiconductor bodies | |
| GB921264A (en) | Improvements in and relating to semiconductor devices | |
| GB795478A (en) | Improvements in or relating to the production of semi-conductor elements | |
| US4243999A (en) | Gate turn-off thyristor | |
| GB805207A (en) | Electric circuit devices utilizing semiconductor bodies and circuits including such devices | |
| US2953693A (en) | Semiconductor diode | |
| GB1016095A (en) | Semiconductor switching device | |
| US4694315A (en) | CMOS overvoltage protection circuit utilizing thyristor and majority carrier injecting anti-parallel diode | |
| US2889499A (en) | Bistable semiconductor device | |
| US2750542A (en) | Unipolar semiconductor devices | |
| US3078196A (en) | Semiconductive switch | |
| GB1000058A (en) | Improvements in or relating to semiconductor devices | |
| GB920630A (en) | Improvements in the fabrication of semiconductor elements | |
| US2994811A (en) | Electrostatic field-effect transistor having insulated electrode controlling field in depletion region of reverse-biased junction | |
| GB849477A (en) | Improvements in or relating to semiconductor control devices | |
| GB849476A (en) | Improvements in or relating to semiconductor control devices | |
| US3307049A (en) | Turnoff-controllable thyristor and method of its operation | |
| US2795744A (en) | Semiconductor signal translating devices | |
| US2595052A (en) | Crystal amplifier | |
| US3319138A (en) | Fast switching high current avalanche transistor | |
| GB973837A (en) | Improvements in semiconductor devices and methods of making same | |
| US2915646A (en) | Semiconductor devices and system |