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GB842352A - Multiple collector transistor - Google Patents

Multiple collector transistor

Info

Publication number
GB842352A
GB842352A GB15904/56A GB1590456A GB842352A GB 842352 A GB842352 A GB 842352A GB 15904/56 A GB15904/56 A GB 15904/56A GB 1590456 A GB1590456 A GB 1590456A GB 842352 A GB842352 A GB 842352A
Authority
GB
United Kingdom
Prior art keywords
current
collector
unit
collectors
units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB15904/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB842352A publication Critical patent/GB842352A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S1/00—Beacons or beacon systems transmitting signals having a characteristic or characteristics capable of being detected by non-directional receivers and defining directions, positions, or position lines fixed relatively to the beacon transmitters; Receivers co-operating therewith
    • G01S1/02—Beacons or beacon systems transmitting signals having a characteristic or characteristics capable of being detected by non-directional receivers and defining directions, positions, or position lines fixed relatively to the beacon transmitters; Receivers co-operating therewith using radio waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/14—Reflecting surfaces; Equivalent structures
    • H01Q15/22—Reflecting surfaces; Equivalent structures functioning also as polarisation filter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
    • H01Q19/10—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
    • H01Q19/18—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces having two or more spaced reflecting surfaces
    • H01Q19/19—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces having two or more spaced reflecting surfaces comprising one main concave reflecting surface associated with an auxiliary reflecting surface
    • H01Q19/195—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces having two or more spaced reflecting surfaces comprising one main concave reflecting surface associated with an auxiliary reflecting surface wherein a reflecting surface acts also as a polarisation filter or a polarising device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Electromagnetism (AREA)
  • Bipolar Transistors (AREA)
  • Static Random-Access Memory (AREA)

Abstract

842,352. Transistor logical circuits. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 23, 1956 [May 25, 1955], No. 15904/56. Class 40(6). [Also in Group XXXVI] A two collector junction emitter transistor (see Group XXXVI) is used to perform a number of logical functions. When the collectors of such a transistor are connected to a common bias source through different load resistors, as in Fig. 6, it is possible to arrange that when one unit of emitter current flows only one of the collectors conducts, that with two units of emitter current the first collector saturates and current is transferred to the second collector to the exclusion of the first collector, and that three units of emitter current saturate the second collector and cause the first collector to conduct in addition. If inputs of zero and unit current, representing digits 0 and 1 respectively, are applied at terminals 21, 22, 23 the circuit acts as a full binary adder with gain. If, on the other hand, a function selection signal of one unit of current is maintained at one terminal the "AND" and "EXCLUSIVE OR" conditions are indicated by conduction in collectors 9 and 8 respectively. If a function selection signal of one unit is applied at one terminal the "OR" and "IF AND ONLY IF" conditions are indicated by current in collectors 9 and 8 respectively. With a function selection signal of one unit of current applied at 23 and zero units at 22 the "NOT" condition is indicated by current in collector 8. With the load resistors adjusted so that each of the collectors is saturated by less than two units of input current and with a continuous zero input at terminal 23 the "OR" and "AND" conditions are indicated by current in collectors 8 and 9 respectively. By lowering the load resistance in the circuit of collector 9 so that at least three units of emitter current are required to saturate it, and applying a function selection signal of one unit at terminal 23, the "NEITHER" condition is indicated by current in collector 8. If, on the other hand, the load in the circuit of collector 8 is lowered so that it saturates when the emitter current lies between 2 and 3 units, and a function selection signal of one unit applied at 23, current in collector 8 indicates the "NOT BOTH" condition. The circuit can be made to act as a memory device by feeding the output of collector 8 back to one of the input terminals and adjusting the loads so that between 2 and 3 units of input current are required to saturate collector 8. When one unit of current is applied to one of the input terminals collector 8 conducts and the feedback maintains the current when the input current is removed. Read-out may be accomplished non-destructively at terminals 32, 33, or destructively by applying a read-out unit pulse of input current to switch the current to collector 9 and sensing at terminals 30, 31. At the end of the read-out pulse due to the absence of feedback from collector 9 both collectors become non- conductive. Erasure is effected by means of a negative input impulse.
GB15904/56A 1955-05-25 1956-05-23 Multiple collector transistor Expired GB842352A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US842352XA 1955-05-25 1955-05-25

Publications (1)

Publication Number Publication Date
GB842352A true GB842352A (en) 1960-07-27

Family

ID=22183671

Family Applications (1)

Application Number Title Priority Date Filing Date
GB15904/56A Expired GB842352A (en) 1955-05-25 1956-05-23 Multiple collector transistor

Country Status (4)

Country Link
DE (1) DE1035779B (en)
FR (1) FR1167590A (en)
GB (1) GB842352A (en)
NL (2) NL207367A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1132247B (en) * 1959-01-30 1962-06-28 Siemens Ag Controlled four-layer triode with four semiconductor layers of alternating conductivity type
DE1097571B (en) * 1959-04-13 1961-01-19 Shockley Transistor Corp Flat transistor with three zones of alternating conductivity type
DE1111298B (en) * 1959-04-28 1961-07-20 Licentia Gmbh Electrically asymmetrically conductive semiconductor arrangement
US3160828A (en) * 1960-01-25 1964-12-08 Westinghouse Electric Corp Radiation sensitive semiconductor oscillating device
DE1196794C2 (en) * 1960-03-26 1966-04-07 Telefunken Patent Semiconductor component with a disk-shaped semiconductor body, in particular transistor, and method for manufacturing
USRE25978E (en) * 1960-08-19 1966-03-08 Multi-collector transistor forming bistable circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE490958A (en) * 1948-09-24
BE519804A (en) * 1952-05-09

Also Published As

Publication number Publication date
NL207367A (en)
DE1035779B (en) 1958-08-07
NL106472C (en)
FR1167590A (en) 1958-11-26

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