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GB8416632D0 - Manufacture of ultra-miniature thin-film diodes - Google Patents

Manufacture of ultra-miniature thin-film diodes

Info

Publication number
GB8416632D0
GB8416632D0 GB848416632A GB8416632A GB8416632D0 GB 8416632 D0 GB8416632 D0 GB 8416632D0 GB 848416632 A GB848416632 A GB 848416632A GB 8416632 A GB8416632 A GB 8416632A GB 8416632 D0 GB8416632 D0 GB 8416632D0
Authority
GB
United Kingdom
Prior art keywords
ultra
manufacture
film diodes
miniature thin
miniature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB848416632A
Other versions
GB2144266B (en
GB2144266A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58117488A external-priority patent/JPH0652794B2/en
Priority claimed from JP58122205A external-priority patent/JPS6014468A/en
Priority claimed from JP58136162A external-priority patent/JPS6028276A/en
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Publication of GB8416632D0 publication Critical patent/GB8416632D0/en
Publication of GB2144266A publication Critical patent/GB2144266A/en
Application granted granted Critical
Publication of GB2144266B publication Critical patent/GB2144266B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
GB08416632A 1983-06-29 1984-06-29 Method of manufacture for ultra-miniature thin-film diodes Expired GB2144266B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP58117488A JPH0652794B2 (en) 1983-06-29 1983-06-29 Method of manufacturing thin film diode
JP58122205A JPS6014468A (en) 1983-07-05 1983-07-05 Thin film diode
JP58136162A JPS6028276A (en) 1983-07-26 1983-07-26 Manufacturing method of thin film diode

Publications (3)

Publication Number Publication Date
GB8416632D0 true GB8416632D0 (en) 1984-08-01
GB2144266A GB2144266A (en) 1985-02-27
GB2144266B GB2144266B (en) 1987-03-18

Family

ID=27313386

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08416632A Expired GB2144266B (en) 1983-06-29 1984-06-29 Method of manufacture for ultra-miniature thin-film diodes

Country Status (3)

Country Link
DE (1) DE3424085A1 (en)
FR (1) FR2548450B1 (en)
GB (1) GB2144266B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2579809B1 (en) * 1985-04-02 1987-05-15 Thomson Csf METHOD FOR PRODUCING DIE-CONTROLLED DIES FOR ELECTRO-OPTICAL DISPLAY FLAT SCREEN AND FLAT SCREEN PRODUCED BY THIS PROCESS
FR2579775B1 (en) * 1985-04-02 1987-05-15 Thomson Csf METHOD FOR PRODUCING NON-LINEAR CONTROL ELEMENTS FOR FLAT SCREEN FOR ELECTRO-OPTICAL VISUALIZATION AND FLAT SCREEN PERFORMED ACCORDING TO THIS METHOD
FR2581781B1 (en) * 1985-05-07 1987-06-12 Thomson Csf NON-LINEAR CONTROL ELEMENTS FOR FLAT ELECTROOPTIC DISPLAY SCREEN AND MANUFACTURING METHOD THEREOF
NL8702490A (en) * 1987-10-19 1989-05-16 Philips Nv DISPLAY WITH LATERAL SCHOTTKY DIODS.
NL8802409A (en) * 1988-09-30 1990-04-17 Philips Nv DISPLAY DEVICE, SUPPORT PLATE PROVIDED WITH DIODE AND SUITABLE FOR THE DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SUPPORT PLATE.
FR2714765B1 (en) * 1993-12-30 1996-02-02 France Telecom Method of making an electrical connection between two conductive layers.
DE4410799C2 (en) * 1994-03-29 1996-02-08 Forschungszentrum Juelich Gmbh diode
GB2304993B (en) * 1995-08-23 1997-08-06 Toshiba Cambridge Res Center Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4174217A (en) * 1974-08-02 1979-11-13 Rca Corporation Method for making semiconductor structure
US4425379A (en) * 1981-02-11 1984-01-10 Fairchild Camera & Instrument Corporation Polycrystalline silicon Schottky diode array
EP0071244B1 (en) * 1981-07-27 1988-11-23 Kabushiki Kaisha Toshiba Thin-film transistor and method of manufacture therefor
US4642620A (en) * 1982-09-27 1987-02-10 Citizen Watch Company Limited Matrix display device

Also Published As

Publication number Publication date
FR2548450B1 (en) 1987-04-30
GB2144266B (en) 1987-03-18
FR2548450A1 (en) 1985-01-04
GB2144266A (en) 1985-02-27
DE3424085A1 (en) 1985-01-17
DE3424085C2 (en) 1989-05-03

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950629