GB809970A - Improvements in or relating to hall voltage generators - Google Patents
Improvements in or relating to hall voltage generatorsInfo
- Publication number
- GB809970A GB809970A GB27333/56A GB2733356A GB809970A GB 809970 A GB809970 A GB 809970A GB 27333/56 A GB27333/56 A GB 27333/56A GB 2733356 A GB2733356 A GB 2733356A GB 809970 A GB809970 A GB 809970A
- Authority
- GB
- United Kingdom
- Prior art keywords
- hall
- elements
- electrodes
- sept
- thermo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 2
- 230000004048 modification Effects 0.000 abstract 2
- 238000012986 modification Methods 0.000 abstract 2
- 230000005676 thermoelectric effect Effects 0.000 abstract 2
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Hall/Mr Elements (AREA)
Abstract
809,970. Semi-conductor devices. SIEMENSSCHUCKERWERKE A.G. Sept. 6, 1956 [Sept. 12, 1955; March 26, 1956], No. 27333/56. Addition to 784,885. Class 37. In a Hall generator according to the parent Specification, the lead from one Hall electrode 6 includes a portion 10 of the same material, e.g. indium arsenide as the Hall element 10. This portion 10 extends as far as the other Hall electrode 7 and compensates for any thermoelectric effect which might arise due to a temperature difference between Hall electrodes 6 and 7. Electrodes 2 and 3 supply the primary current to the Hall element. In a modification (Fig. 2), the element 10 is adapted to operate as a second Hall generator with primary supply terminals 102 and 103 and Hall electrodes 106 and 107. The elements may be connected with the two thermo-electric voltages in opposition and the two Hall voltages in series aiding or series opposition. A thin layer or ceramic or ferritic insulating material may separate the two Hall elements 1 and 10. In a further modification, two additional elements of the same material as the Hall elements are also connected immediately adjacent the generators to provide further compensation for thermo-electric effects if this should be necessary.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE809970X | 1955-09-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB809970A true GB809970A (en) | 1959-03-04 |
Family
ID=6723444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB27333/56A Expired GB809970A (en) | 1955-09-12 | 1956-09-06 | Improvements in or relating to hall voltage generators |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB809970A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1283965B (en) * | 1959-05-06 | 1968-11-28 | Texas Instruments Inc | Hermetically sealed semiconductor device |
-
1956
- 1956-09-06 GB GB27333/56A patent/GB809970A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1283965B (en) * | 1959-05-06 | 1968-11-28 | Texas Instruments Inc | Hermetically sealed semiconductor device |
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