GB808973A - Improvements in semiconductor devices and methods for their manufacture - Google Patents
Improvements in semiconductor devices and methods for their manufactureInfo
- Publication number
- GB808973A GB808973A GB10698/55A GB1069855A GB808973A GB 808973 A GB808973 A GB 808973A GB 10698/55 A GB10698/55 A GB 10698/55A GB 1069855 A GB1069855 A GB 1069855A GB 808973 A GB808973 A GB 808973A
- Authority
- GB
- United Kingdom
- Prior art keywords
- per cent
- silicon
- mol
- germanium
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 abstract 12
- 239000010703 silicon Substances 0.000 abstract 12
- 229910052732 germanium Inorganic materials 0.000 abstract 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 9
- 239000000155 melt Substances 0.000 abstract 9
- 239000013078 crystal Substances 0.000 abstract 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 5
- 229910045601 alloy Inorganic materials 0.000 abstract 4
- 239000000956 alloy Substances 0.000 abstract 4
- 239000000203 mixture Substances 0.000 abstract 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 2
- 229910000676 Si alloy Inorganic materials 0.000 abstract 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 1
- 229960000583 acetic acid Drugs 0.000 abstract 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052794 bromium Inorganic materials 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000008014 freezing Effects 0.000 abstract 1
- 238000007710 freezing Methods 0.000 abstract 1
- 239000012362 glacial acetic acid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Monocrystalline bodies of germanium silicon alloys are formed by the Czochralski seed crystal withdrawal method using a melt consisting of germanium and silicon. In one embodiment a germanium seed crystal is pulled from a melt consisting of 99.9 mol. per cent germanium and 0.1 mol. per cent silicon at a rate of 0.3 mm. per minute. Two methods of making monocrystalline alloys containing higher percentages of silicon are described. In the first method a monocrystalline ingot is prepared by withdrawing a seed crystal containing 0.3 mol. per cent of silicon from a melt more heavily doped with silicon. A seed crystal cut from this ingot is then drawn from a melt containing even more silicon. The process is repeated until a monocrystalline ingot containing the required amount of silicon is obtained. In the second method a seed crystal grown from a germanium silicon melt of certain composition is then pulled from a melt of the same composition to form a large monocrystalline ingot. For example, a seed cut from a crystalline mass solidified from a melt consisting of 50 mol. per cent silicon and 50 mol. per cent germanium or 75 mol. per cent silicon and 25 mol. per cent germanium is pulled at a rate of 0.1 mm/minute from a melt of similar composition maintained at 3 to 4 degrees above its freezing point. Specification 636,248, [Group II], is referred to.ALSO:Materials suitable for use in semiconductor devices (see Group XXXVI) consist of monocrystalline germanium-silicon alloys. One such alloy prepared by withdrawing a seed crystal of germanium from a suitable melt consists of 0.3 mol. per cent silicon and 99.7 mol. per cent germanium. Alloys produced from melts consisting of 50 mol. per cent silicon and 50 mol. per cent germanium, and of 75 mol. per cent silicon and 25 mol. per cent germanium by withdrawal of seed crystal cut from ingots solidified from melts of similar composition are also described. The following etching solutions suitable for cleaning the surface of semiconductor devices made from such alloys are described: (1) 5 parts of 70 per cent nitric acid, 5 parts of 52 per cent hydrofluoric acid and 1 part water. (2) Equal parts of 70 per cent nitric and 52 per cent hydrofluoric acids and water. (3) 80 parts of 70 per cent nitric acid, 50 parts of 52 per cent hydrofluoric acid, 50 parts of 99.5 per cent glacial acetic acid, and 1 part bromine. Specification 636,248 is referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US427098A US2817798A (en) | 1954-05-03 | 1954-05-03 | Semiconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB808973A true GB808973A (en) | 1959-02-18 |
Family
ID=23693481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB10698/55A Expired GB808973A (en) | 1954-05-03 | 1955-04-13 | Improvements in semiconductor devices and methods for their manufacture |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2817798A (en) |
| BE (1) | BE537841A (en) |
| CH (1) | CH354168A (en) |
| FR (1) | FR1123706A (en) |
| GB (1) | GB808973A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL113882C (en) * | 1952-06-13 | |||
| US2919389A (en) * | 1955-04-28 | 1959-12-29 | Siemens Ag | Semiconductor arrangement for voltage-dependent capacitances |
| DE1170555B (en) * | 1956-07-23 | 1964-05-21 | Siemens Ag | Method for manufacturing a semiconductor component with three zones of alternating conductivity types |
| NL121500C (en) * | 1958-09-02 | |||
| US3124493A (en) * | 1959-01-26 | 1964-03-10 | Method for making the same | |
| NL266513A (en) * | 1960-07-01 | |||
| US3235957A (en) * | 1964-05-20 | 1966-02-22 | Rca Corp | Method of manufacturing a thermoelectric device |
| CN115975745A (en) * | 2023-01-04 | 2023-04-18 | 四川晶科能源有限公司 | Recipe and method of seed pickling |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2485069A (en) * | 1944-07-20 | 1949-10-18 | Bell Telephone Labor Inc | Translating material of silicon base |
| US2538593A (en) * | 1949-04-30 | 1951-01-16 | Rca Corp | Semiconductor amplifier construction |
| US2731704A (en) * | 1952-12-27 | 1956-01-24 | Raytheon Mfg Co | Method of making transistors |
-
0
- BE BE537841D patent/BE537841A/xx unknown
-
1954
- 1954-05-03 US US427098A patent/US2817798A/en not_active Expired - Lifetime
-
1955
- 1955-03-11 FR FR1123706D patent/FR1123706A/en not_active Expired
- 1955-04-13 GB GB10698/55A patent/GB808973A/en not_active Expired
- 1955-05-02 CH CH354168D patent/CH354168A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE537841A (en) | 1900-01-01 |
| US2817798A (en) | 1957-12-24 |
| CH354168A (en) | 1961-05-15 |
| FR1123706A (en) | 1956-09-26 |
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