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GB797687A - Improvements in or relating to processes for the manufacture of semi-conductor rectifiers - Google Patents

Improvements in or relating to processes for the manufacture of semi-conductor rectifiers

Info

Publication number
GB797687A
GB797687A GB21831/55A GB2183155A GB797687A GB 797687 A GB797687 A GB 797687A GB 21831/55 A GB21831/55 A GB 21831/55A GB 2183155 A GB2183155 A GB 2183155A GB 797687 A GB797687 A GB 797687A
Authority
GB
United Kingdom
Prior art keywords
temperature
alloying
semi
pellet
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21831/55A
Inventor
Henry Stanley Blanks
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marconis Wireless Telegraph Co Ltd
BAE Systems Electronics Ltd
Original Assignee
Marconis Wireless Telegraph Co Ltd
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconis Wireless Telegraph Co Ltd, Marconi Co Ltd filed Critical Marconis Wireless Telegraph Co Ltd
Priority to ES0230001A priority Critical patent/ES230001A1/en
Publication of GB797687A publication Critical patent/GB797687A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

797,687. Semi-conductor devices. MARCONI'S WIRELESS TELEGRAPH CO., Ltd. May 28, 1956 [July 28, 1955], No. 21831/55. Drawings to Specification. Class 37. A method of making a PN junction rectifier comprises the following steps: placing a pellet of activator material characteristic of one conductivity type on a semi-conductor wafer of the opposite type, heating in vacuo or in an inert atmosphere to a temperature slightly above the melting-point and wetting temperature of the activator, forming an oxide skin on the activator, raising the temperature to the optimum temperature for alloying, and then cooling. In the embodiment an indium pellet is placed on a germanium wafer mounted on a nickel baseplate, and heated in a flow of oxygen-free hydrogen to 300 ‹ C. The flow of hydrogen is then replaced by a flow of nitrogen containing some oxygen and the assembly raised to the optimum alloying temperature of 510‹ C. The assembly is then cooled and, if desired, the oxide layer is removed from the indium by etching. The effect of the oxide film is to raise the surface tension so that the uncontrolled spread of indium over the germanium surface which would otherwise occur at the optimum alloying temperature is avoided. Sufficient oxygen may be introduced into the nitrogen by bubbling it through water. The method may also be used in alloying an antimony pellet to a wafer of silicon.
GB21831/55A 1955-07-28 1955-07-28 Improvements in or relating to processes for the manufacture of semi-conductor rectifiers Expired GB797687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES0230001A ES230001A1 (en) 1955-07-28 1956-07-26 Procedure for the manufacture of semiconductor rectifier (Machine-translation by Google Translate, not legally binding)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2183156 1956-05-28

Publications (1)

Publication Number Publication Date
GB797687A true GB797687A (en) 1958-07-09

Family

ID=10169546

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21831/55A Expired GB797687A (en) 1955-07-28 1955-07-28 Improvements in or relating to processes for the manufacture of semi-conductor rectifiers

Country Status (3)

Country Link
DE (1) DE1015936B (en)
FR (1) FR1155086A (en)
GB (1) GB797687A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1255822B (en) * 1957-04-18 1967-12-07 Siemens Ag Alloying process for connecting a semiconductor body made of silicon with an electrode body made of gold
US3015591A (en) * 1958-07-18 1962-01-02 Itt Semi-conductor rectifiers and method of manufacture
DE1174909B (en) * 1962-02-05 1964-07-30 Elektronik M B H Method for the production of at least two alloy electrodes attached close to one another on a surface of the semiconductor body of a semiconductor component
DE1236659B (en) * 1962-06-29 1967-03-16 Licentia Gmbh Alloy process for the production of semiconductor components with a silicon body
DE1514082C3 (en) * 1964-02-13 1984-08-30 Kabushiki Kaisha Hitachi Seisakusho, Tokio/Tokyo Field effect transistor
DE1216989B (en) * 1964-06-24 1966-05-18 Licentia Gmbh Method for producing a semiconductor component with a silicon body

Also Published As

Publication number Publication date
DE1015936B (en) 1957-09-19
FR1155086A (en) 1958-04-22

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