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GB779666A - Improvements relating to p-n junction devices and to their methods of manufacture - Google Patents

Improvements relating to p-n junction devices and to their methods of manufacture

Info

Publication number
GB779666A
GB779666A GB29394/54A GB2939454A GB779666A GB 779666 A GB779666 A GB 779666A GB 29394/54 A GB29394/54 A GB 29394/54A GB 2939454 A GB2939454 A GB 2939454A GB 779666 A GB779666 A GB 779666A
Authority
GB
United Kingdom
Prior art keywords
melt
indium
type
added
arsenic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29394/54A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB779666A publication Critical patent/GB779666A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB29394/54A 1953-10-13 1954-10-12 Improvements relating to p-n junction devices and to their methods of manufacture Expired GB779666A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US779666XA 1953-10-13 1953-10-13

Publications (1)

Publication Number Publication Date
GB779666A true GB779666A (en) 1957-07-24

Family

ID=22141063

Family Applications (1)

Application Number Title Priority Date Filing Date
GB29394/54A Expired GB779666A (en) 1953-10-13 1954-10-12 Improvements relating to p-n junction devices and to their methods of manufacture

Country Status (3)

Country Link
BE (1) BE532474A (zh)
FR (1) FR1113385A (zh)
GB (1) GB779666A (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3054033A (en) * 1957-05-21 1962-09-11 Sony Corp Junction type semiconductor device
US3065115A (en) * 1959-12-29 1962-11-20 Texas Instruments Inc Method for fabricating transistors having desired current-transfer ratios
US3070465A (en) * 1957-07-26 1962-12-25 Sony Corp Method of manufacturing a grown type semiconductor device
US3084078A (en) * 1959-12-02 1963-04-02 Texas Instruments Inc High frequency germanium transistor
US3150017A (en) * 1957-06-29 1964-09-22 Sony Corp Doping a pulled semiconductor crystal with impurities having different diffusion coefficients

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899343A (en) * 1954-05-27 1959-08-11 Jsion
US2883313A (en) * 1954-08-16 1959-04-21 Rca Corp Semiconductor devices
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
US2973290A (en) * 1956-07-05 1961-02-28 Gen Electric Co Ltd Production of semi-conductor bodies by impurity diffusion through station ary interface
NL219673A (zh) * 1956-08-10
US2977256A (en) * 1956-08-16 1961-03-28 Gen Electric Semiconductor devices and methods of making same
NL221194A (zh) * 1956-10-01

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3054033A (en) * 1957-05-21 1962-09-11 Sony Corp Junction type semiconductor device
US3150017A (en) * 1957-06-29 1964-09-22 Sony Corp Doping a pulled semiconductor crystal with impurities having different diffusion coefficients
US3070465A (en) * 1957-07-26 1962-12-25 Sony Corp Method of manufacturing a grown type semiconductor device
US3084078A (en) * 1959-12-02 1963-04-02 Texas Instruments Inc High frequency germanium transistor
US3065115A (en) * 1959-12-29 1962-11-20 Texas Instruments Inc Method for fabricating transistors having desired current-transfer ratios

Also Published As

Publication number Publication date
BE532474A (zh)
FR1113385A (fr) 1956-03-28

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