[go: up one dir, main page]

GB602140A - Process for producing silicon and electrical translating elements made therefrom - Google Patents

Process for producing silicon and electrical translating elements made therefrom

Info

Publication number
GB602140A
GB602140A GB29998/45A GB2999845A GB602140A GB 602140 A GB602140 A GB 602140A GB 29998/45 A GB29998/45 A GB 29998/45A GB 2999845 A GB2999845 A GB 2999845A GB 602140 A GB602140 A GB 602140A
Authority
GB
United Kingdom
Prior art keywords
alloy
silicon
boron
prepared
per cent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29998/45A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB602140A publication Critical patent/GB602140A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

A silicon alloy, particularly for use in a crystal detector, is formed by adding from .003 to .01 per cent of boron to silicon of a purity in excess of 99.8 per cent. This results in a considerable reduction in the specific resistance and an improvement in the rectifying properties. In making the alloy, an ingot of the pure silicon is prepared and its specific resistance is measured. The proportion of boron to be added to give a desired resistance is then calculated. A master alloy is then prepared comprising 1 per cent of boron, and the final alloy is prepared by mixing the correct proportion of the master alloy with the pure silicon. From the ingot thin slabs are cut to form detector units.
GB29998/45A 1944-07-20 1945-11-09 Process for producing silicon and electrical translating elements made therefrom Expired GB602140A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US545854A US2485069A (en) 1944-07-20 1944-07-20 Translating material of silicon base

Publications (1)

Publication Number Publication Date
GB602140A true GB602140A (en) 1948-05-20

Family

ID=24177815

Family Applications (1)

Application Number Title Priority Date Filing Date
GB29998/45A Expired GB602140A (en) 1944-07-20 1945-11-09 Process for producing silicon and electrical translating elements made therefrom

Country Status (7)

Country Link
US (1) US2485069A (en)
BE (1) BE467508A (en)
CH (1) CH263769A (en)
DE (1) DE840407C (en)
FR (1) FR938431A (en)
GB (1) GB602140A (en)
NL (1) NL73819C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2817798A (en) * 1954-05-03 1957-12-24 Rca Corp Semiconductors

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2815303A (en) * 1953-07-24 1957-12-03 Raythcon Mfg Company Method of making junction single crystals
US2861017A (en) * 1953-09-30 1958-11-18 Honeywell Regulator Co Method of preparing semi-conductor devices
BE536181A (en) * 1954-03-03
BE551335A (en) * 1955-09-29
NL210216A (en) * 1955-12-02
US2824269A (en) * 1956-01-17 1958-02-18 Bell Telephone Labor Inc Silicon translating devices and silicon alloys therefor
US3448349A (en) * 1965-12-06 1969-06-03 Texas Instruments Inc Microcontact schottky barrier semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE18579E (en) * 1932-08-23 Demodulator and method op demodulation
US1037713A (en) * 1911-06-26 1912-09-03 Carborundum Co Method of making silicon articles.
GB551209A (en) * 1941-02-04 1943-02-12 Western Electric Co Rectifying contact detector systems for very short electric waves
US2419561A (en) * 1941-08-20 1947-04-29 Gen Electric Co Ltd Crystal contact of which one element is mainly silicon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2817798A (en) * 1954-05-03 1957-12-24 Rca Corp Semiconductors

Also Published As

Publication number Publication date
CH263769A (en) 1949-09-15
NL73819C (en) 1953-08-15
FR938431A (en) 1948-09-15
DE840407C (en) 1952-06-03
US2485069A (en) 1949-10-18
BE467508A (en) 1946-09-30

Similar Documents

Publication Publication Date Title
GB602140A (en) Process for producing silicon and electrical translating elements made therefrom
AU121650B2 (en) Improvement in or relating to zinc base alloys containing copper and berryllium and process for making thesame
GB597110A (en) Improvements in or relating to the manufacture of glass
GB657156A (en) Process for the production of magnesium alloys containing zirconium
AU155679B2 (en) Improvements in or relating tothe method of producing hydrogen
AU3691750A (en) Improvements in or relating tothe method of producing hydrogen
AU3691850A (en) Improvements in or relating tothe method of producing hydrogen
AU140427B2 (en) Improvements in or relating to process for producing an intumnesced composition of matter
GB586542A (en) Improvements in or relating to the protective surface treatment of cadmium, cadmium-coated and cadmium alloy articles
AU124449B2 (en) Improvements in or relating toa cyclic method of producing substantially pure calcium cyanide
AU153656B2 (en) Process for producing aluminium and its alloys
AU136400B2 (en) Improvements in or relating to composition forand method of producing phosphate films
AU221156B2 (en) Improvements in or relating to methods of producing silicon of high purity
AU118152B2 (en) Improvements in or relating to method of producing compositions for activating metal surfaces
AU2826449A (en) Process for producing aluminium and its alloys
GB631078A (en) The manufacture of pyridyl-3-carbinol and process for obtaining same
AU119068B2 (en) Improvements in or relating to moulded articles or methods of making thesame
AU203200B2 (en) Improvements in or relating to methods of producing silicon of high purity
AU118241B2 (en) Improvements in and relating to methods for producing alloy metals
AU123573B2 (en) Improvements in or relating to calcium cyanide diammoniate and method of producing same
AU3195257A (en) Improvements in or relating to methods of producing silicon of high purity
AU843343A (en) Improvements in or relating to method of producing compositions for activating metal surfaces
AU123525B2 (en) Improvements in copper hydroxy soaps and process of preparing same
AU124773B2 (en) Improvements in or relating to cemented carbide article of manufacture and method and apparatus for making it
AU121788B2 (en) Improvements in or relating to machines suitable for use inthe manufacture of insoles