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GB2599173B - A method of manufacturing a transistor - Google Patents

A method of manufacturing a transistor Download PDF

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Publication number
GB2599173B
GB2599173B GB2017408.2A GB202017408A GB2599173B GB 2599173 B GB2599173 B GB 2599173B GB 202017408 A GB202017408 A GB 202017408A GB 2599173 B GB2599173 B GB 2599173B
Authority
GB
United Kingdom
Prior art keywords
transistor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2017408.2A
Other versions
GB202017408D0 (en
GB2599173A (en
Inventor
James Badcock Thomas
Wallis Robert
Guiney Ivor
Thomas Simon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Paragraf Ltd
Original Assignee
Paragraf Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Paragraf Ltd filed Critical Paragraf Ltd
Publication of GB202017408D0 publication Critical patent/GB202017408D0/en
Priority to US17/473,852 priority Critical patent/US11545558B2/en
Priority to US17/478,290 priority patent/US11830925B2/en
Priority to EP21197623.8A priority patent/EP3975260A1/en
Priority to CN202111142930.7A priority patent/CN114284349A/en
Publication of GB2599173A publication Critical patent/GB2599173A/en
Application granted granted Critical
Publication of GB2599173B publication Critical patent/GB2599173B/en
Priority to US18/076,117 priority patent/US12002870B2/en
Priority to US18/498,509 priority patent/US12119388B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
GB2017408.2A 2020-09-28 2020-11-03 A method of manufacturing a transistor Active GB2599173B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US17/473,852 US11545558B2 (en) 2020-09-28 2021-09-13 Method of manufacturing a transistor
US17/478,290 US11830925B2 (en) 2020-09-28 2021-09-17 Graphene transistor and method of manufacturing a graphene transistor
EP21197623.8A EP3975260A1 (en) 2020-09-28 2021-09-20 A graphene transistor and method of manufacturing a graphene transistor
CN202111142930.7A CN114284349A (en) 2020-09-28 2021-09-28 Graphene transistor and method of making graphene transistor
US18/076,117 US12002870B2 (en) 2020-09-28 2022-12-06 Method of manufacturing a transistor
US18/498,509 US12119388B2 (en) 2020-09-28 2023-10-31 Graphene transistor and method of manufacturing a graphene transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2015321.9A GB2599150B (en) 2020-09-28 2020-09-28 A graphene transistor and method of manufacturing a graphene transistor

Publications (3)

Publication Number Publication Date
GB202017408D0 GB202017408D0 (en) 2020-12-16
GB2599173A GB2599173A (en) 2022-03-30
GB2599173B true GB2599173B (en) 2022-11-02

Family

ID=73197413

Family Applications (2)

Application Number Title Priority Date Filing Date
GB2015321.9A Active GB2599150B (en) 2020-09-28 2020-09-28 A graphene transistor and method of manufacturing a graphene transistor
GB2017408.2A Active GB2599173B (en) 2020-09-28 2020-11-03 A method of manufacturing a transistor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB2015321.9A Active GB2599150B (en) 2020-09-28 2020-09-28 A graphene transistor and method of manufacturing a graphene transistor

Country Status (1)

Country Link
GB (2) GB2599150B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2585842B (en) * 2019-07-16 2022-04-20 Paragraf Ltd A method of making graphene structures and devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106952949A (en) * 2016-01-07 2017-07-14 中芯国际集成电路制造(上海)有限公司 Graphene field effect transistor and method of forming same
EP3206232A1 (en) * 2016-02-12 2017-08-16 Centre National de la Recherche Scientifique - CNRS - Method for obtaining a graphene-based fet, in particular a memory fet, equipped with an embedded dielectric element made by fluorination
US20180012962A1 (en) * 2016-07-06 2018-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Field-Effect Transistors Having Contacts To 2D Material Active Region

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102468333B (en) * 2010-10-29 2014-05-28 中国科学院微电子研究所 Graphene device and manufacturing method thereof
CN102157548A (en) * 2011-02-15 2011-08-17 复旦大学 Transistor based on graphene layer
GB201514542D0 (en) * 2015-08-14 2015-09-30 Thomas Simon C S A method of producing graphene
GB2571248B (en) * 2018-01-11 2022-07-13 Paragraf Ltd A method of making Graphene layer structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106952949A (en) * 2016-01-07 2017-07-14 中芯国际集成电路制造(上海)有限公司 Graphene field effect transistor and method of forming same
EP3206232A1 (en) * 2016-02-12 2017-08-16 Centre National de la Recherche Scientifique - CNRS - Method for obtaining a graphene-based fet, in particular a memory fet, equipped with an embedded dielectric element made by fluorination
US20180012962A1 (en) * 2016-07-06 2018-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Field-Effect Transistors Having Contacts To 2D Material Active Region

Also Published As

Publication number Publication date
GB2599150A (en) 2022-03-30
GB202017408D0 (en) 2020-12-16
GB202015321D0 (en) 2020-11-11
GB2599150B (en) 2022-12-28
GB2599173A (en) 2022-03-30

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