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GB2461128B - ChemFET Arrays for Nucleic Acid Sequencing - Google Patents

ChemFET Arrays for Nucleic Acid Sequencing

Info

Publication number
GB2461128B
GB2461128B GB0811657A GB0811657A GB2461128B GB 2461128 B GB2461128 B GB 2461128B GB 0811657 A GB0811657 A GB 0811657A GB 0811657 A GB0811657 A GB 0811657A GB 2461128 B GB2461128 B GB 2461128B
Authority
GB
United Kingdom
Prior art keywords
nucleic acid
acid sequencing
array
manufacturing
sequencing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB0811657A
Other versions
GB2461128A (en
GB0811657D0 (en
Inventor
Jonathan M Rothberg
Wolfgang Hinz
Kim L Johnson
James Bustillo
John Leamon
Jonathan Schultz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ion Torrent Systems Inc
Original Assignee
Ion Torrent Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Torrent Systems Inc filed Critical Ion Torrent Systems Inc
Priority to GB0811657A priority Critical patent/GB2461128B/en
Publication of GB0811657D0 publication Critical patent/GB0811657D0/en
Priority to JP2011516300A priority patent/JP5667049B2/en
Priority to EP09798251.6A priority patent/EP2307577B1/en
Priority to PCT/US2009/003766 priority patent/WO2010008480A2/en
Priority to US13/001,182 priority patent/US8470164B2/en
Priority to CN200980133866.7A priority patent/CN102203282B/en
Priority to EP15170247.9A priority patent/EP2982437B1/en
Publication of GB2461128A publication Critical patent/GB2461128A/en
Application granted granted Critical
Publication of GB2461128B publication Critical patent/GB2461128B/en
Priority to US13/193,128 priority patent/US8524057B2/en
Priority to US13/966,184 priority patent/US9458502B2/en
Priority to US14/520,558 priority patent/US9194000B2/en
Priority to JP2014250922A priority patent/JP6088481B2/en
Priority to US15/276,709 priority patent/US20170145497A1/en
Priority to JP2017017569A priority patent/JP6370938B2/en
Priority to US16/882,414 priority patent/US11530444B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
    • C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/68—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
    • C12Q1/6869—Methods for sequencing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H01L21/823437—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biochemistry (AREA)
  • Zoology (AREA)
  • Wood Science & Technology (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Biophysics (AREA)
  • Genetics & Genomics (AREA)
  • Pathology (AREA)
  • Biotechnology (AREA)
  • Microbiology (AREA)
  • General Engineering & Computer Science (AREA)
  • Electrochemistry (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)

Abstract

A method for sequencing a nucleic acid using chemFET (e.g. ISFET, pHFET) arrays based on monitoring changes in the concentration of inorganic pyrophosphate (PPi), hydrogen ions, and nucleotide triphosphates. Also claimed is an apparatus for detection of ion pulses comprising a laminar fluid flow system; a method for manufacturing a sequencing device comprising generating wells in a glass material on top of an array of transistors; a method for manufacturing an array of FETs coupled to a floating gate; and reaction methods for determining nucleotide sequences.
GB0811657A 2008-06-25 2008-06-25 ChemFET Arrays for Nucleic Acid Sequencing Active GB2461128B (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
GB0811657A GB2461128B (en) 2008-06-25 2008-06-25 ChemFET Arrays for Nucleic Acid Sequencing
US13/001,182 US8470164B2 (en) 2008-06-25 2009-06-25 Methods and apparatus for measuring analytes using large scale FET arrays
EP09798251.6A EP2307577B1 (en) 2008-06-25 2009-06-25 Methods for measuring analytes using large scale fet arrays
PCT/US2009/003766 WO2010008480A2 (en) 2008-06-25 2009-06-25 Methods and apparatus for measuring analytes using large scale fet arrays
JP2011516300A JP5667049B2 (en) 2008-06-25 2009-06-25 Method and apparatus for measuring analytes using large-scale FET arrays
CN200980133866.7A CN102203282B (en) 2008-06-25 2009-06-25 Methods and apparatus for measuring analytes using large scale FET arrays
EP15170247.9A EP2982437B1 (en) 2008-06-25 2009-06-25 Methods and apparatus for measuring analytes using large scale fet arrays
US13/193,128 US8524057B2 (en) 2008-06-25 2011-07-28 Methods and apparatus for measuring analytes using large scale FET arrays
US13/966,184 US9458502B2 (en) 2008-06-25 2013-08-13 Methods and apparatus for measuring analytes using large scale FET arrays
US14/520,558 US9194000B2 (en) 2008-06-25 2014-10-22 Methods and apparatus for measuring analytes using large scale FET arrays
JP2014250922A JP6088481B2 (en) 2008-06-25 2014-12-11 Method and apparatus for measuring analytes using large-scale FET arrays
US15/276,709 US20170145497A1 (en) 2008-06-25 2016-09-26 Methods and apparatus for measuring analytes using large scale fet arrays
JP2017017569A JP6370938B2 (en) 2008-06-25 2017-02-02 Method and apparatus for measuring analytes using large-scale FET arrays
US16/882,414 US11530444B2 (en) 2008-06-25 2020-05-22 Methods and apparatus for measuring analytes using large scale FET arrays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0811657A GB2461128B (en) 2008-06-25 2008-06-25 ChemFET Arrays for Nucleic Acid Sequencing

Publications (3)

Publication Number Publication Date
GB0811657D0 GB0811657D0 (en) 2008-07-30
GB2461128A GB2461128A (en) 2009-12-30
GB2461128B true GB2461128B (en) 2010-12-15

Family

ID=39683149

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0811657A Active GB2461128B (en) 2008-06-25 2008-06-25 ChemFET Arrays for Nucleic Acid Sequencing

Country Status (1)

Country Link
GB (1) GB2461128B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120202276A1 (en) 2010-02-26 2012-08-09 Life Technologies Corporation Modified Proteins and Methods of Making and Using Same
EP2808401B1 (en) * 2010-02-26 2016-12-14 Life Technologies Corporation Method for sequencing using a modified DNA polymerase
GB201018224D0 (en) * 2010-10-28 2010-12-15 Dna Electronics Chemical sensing device
EP3608422A1 (en) * 2018-08-08 2020-02-12 Amaryllis Innovation GmbH Electrochemical detection of polymerase reactions by specific metal-phosphate complex formation
CN113054976B (en) * 2021-03-05 2024-02-09 南京大学 SPAD array suitable for address coding

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003073088A2 (en) * 2001-03-09 2003-09-04 Christofer Toumazou Apparatus and method for the detection of localised fluctuactions of ionic charge by ion sensitive field effect transistors during a chemical reaction
US20050032075A1 (en) * 2002-10-01 2005-02-10 Hidenobu Yaku Method of detecting primer extension reaction, method of discriminating base type, device for discriminating base type, device for detecting pyrophosphate, method of detecting nucleic acid and tip for introducing sample solution
US20050062093A1 (en) * 2001-11-16 2005-03-24 Kazuaki Sawada Fet type sensor, ion density detecting method comprising this sensor, and base sequence detecting method
US20060183145A1 (en) * 2005-01-31 2006-08-17 Stephen Turner Use of reversible extension terminator in nucleic acid sequencing
US20060199193A1 (en) * 2005-03-04 2006-09-07 Tae-Woong Koo Sensor arrays and nucleic acid sequencing applications
WO2008076406A2 (en) * 2006-12-14 2008-06-26 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes using large scale fet arrays

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003073088A2 (en) * 2001-03-09 2003-09-04 Christofer Toumazou Apparatus and method for the detection of localised fluctuactions of ionic charge by ion sensitive field effect transistors during a chemical reaction
US20050062093A1 (en) * 2001-11-16 2005-03-24 Kazuaki Sawada Fet type sensor, ion density detecting method comprising this sensor, and base sequence detecting method
US20050032075A1 (en) * 2002-10-01 2005-02-10 Hidenobu Yaku Method of detecting primer extension reaction, method of discriminating base type, device for discriminating base type, device for detecting pyrophosphate, method of detecting nucleic acid and tip for introducing sample solution
US20060183145A1 (en) * 2005-01-31 2006-08-17 Stephen Turner Use of reversible extension terminator in nucleic acid sequencing
US20060199193A1 (en) * 2005-03-04 2006-09-07 Tae-Woong Koo Sensor arrays and nucleic acid sequencing applications
WO2008076406A2 (en) * 2006-12-14 2008-06-26 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes using large scale fet arrays

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Angew. Chem. Int. Ed., Vol.45, 2005, Sakata, T. et al., "DNA sequencing based on...", pp.2225-2228 *
Biosensors & Bioelectronics, Vol.22, 2007, Sakata, T. et al., "Direct transduction of allele-specific...", pp.1311-1316 *
Sensors & Actuators B, Vol.114, 2006, Purushothaman, S. et al., "Protons and single nucleotide...", pp.964-968 *

Also Published As

Publication number Publication date
GB2461128A (en) 2009-12-30
GB0811657D0 (en) 2008-07-30

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