[go: up one dir, main page]

GB2437848B - Substrate-free chip light emitting diode and manufacturing method thereof - Google Patents

Substrate-free chip light emitting diode and manufacturing method thereof

Info

Publication number
GB2437848B
GB2437848B GB0708932A GB0708932A GB2437848B GB 2437848 B GB2437848 B GB 2437848B GB 0708932 A GB0708932 A GB 0708932A GB 0708932 A GB0708932 A GB 0708932A GB 2437848 B GB2437848 B GB 2437848B
Authority
GB
United Kingdom
Prior art keywords
substrate
manufacturing
light emitting
emitting diode
chip light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0708932A
Other versions
GB0708932D0 (en
GB2437848A (en
Inventor
Chin-Chung Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chunghwa Picture Tubes Ltd
Original Assignee
Chunghwa Picture Tubes Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW094114854A external-priority patent/TWI246786B/en
Application filed by Chunghwa Picture Tubes Ltd filed Critical Chunghwa Picture Tubes Ltd
Priority to GB0708932A priority Critical patent/GB2437848B/en
Publication of GB0708932D0 publication Critical patent/GB0708932D0/en
Publication of GB2437848A publication Critical patent/GB2437848A/en
Application granted granted Critical
Publication of GB2437848B publication Critical patent/GB2437848B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H01L27/15—
    • H01L33/0066—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
GB0708932A 2005-05-09 2006-04-25 Substrate-free chip light emitting diode and manufacturing method thereof Expired - Fee Related GB2437848B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0708932A GB2437848B (en) 2005-05-09 2006-04-25 Substrate-free chip light emitting diode and manufacturing method thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW094114854A TWI246786B (en) 2005-05-09 2005-05-09 Substrate-free flip chip light emitting diode and manufacturing method thereof
GB0708932A GB2437848B (en) 2005-05-09 2006-04-25 Substrate-free chip light emitting diode and manufacturing method thereof
GB0608131A GB2426123B (en) 2005-05-09 2006-04-25 Substrate-free flip chip light emitting diode and manufacturing method thereof

Publications (3)

Publication Number Publication Date
GB0708932D0 GB0708932D0 (en) 2007-06-20
GB2437848A GB2437848A (en) 2007-11-07
GB2437848B true GB2437848B (en) 2008-04-09

Family

ID=38578548

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0708932A Expired - Fee Related GB2437848B (en) 2005-05-09 2006-04-25 Substrate-free chip light emitting diode and manufacturing method thereof

Country Status (1)

Country Link
GB (1) GB2437848B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115832150A (en) * 2022-11-02 2023-03-21 华灿光电（浙江）有限公司 Packaging method of substrate-free device and substrate-free device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003088320A2 (en) * 2002-04-09 2003-10-23 Oriol, Inc. A method of fabricating vertical devices using a metal support film
US20040188791A1 (en) * 2003-03-31 2004-09-30 Ray-Hua Horng Light emitting diode and method for producing the same
US20040211972A1 (en) * 2003-04-22 2004-10-28 Gelcore, Llc Flip-chip light emitting diode
US20040227148A1 (en) * 1997-06-03 2004-11-18 Camras Michael D. III-Phosphide and III-Arsenide flip chip light-emitting devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040227148A1 (en) * 1997-06-03 2004-11-18 Camras Michael D. III-Phosphide and III-Arsenide flip chip light-emitting devices
WO2003088320A2 (en) * 2002-04-09 2003-10-23 Oriol, Inc. A method of fabricating vertical devices using a metal support film
US20040188791A1 (en) * 2003-03-31 2004-09-30 Ray-Hua Horng Light emitting diode and method for producing the same
US20040211972A1 (en) * 2003-04-22 2004-10-28 Gelcore, Llc Flip-chip light emitting diode

Also Published As

Publication number Publication date
GB0708932D0 (en) 2007-06-20
GB2437848A (en) 2007-11-07

Similar Documents

Publication Publication Date Title
TWI369000B (en) Semiconductor light emiting element and method for making the same
TWI367573B (en) Light emitting diode package and manufacturing method thereof
GB0724781D0 (en) Substrate and semiconductor light emitting element
TWI329369B (en) Light emitting diode employing an array of nanorods and method of fabricating the same
TWI349381B (en) Light-emitting diode and manufacturing method thereof
EP1548849A4 (en) LIGHT EMITTING DIODE
DE60318611D1 (en) Light emitting diode
GB0620523D0 (en) Phosphor and light-emitting diode
TWI341041B (en) Luminous diodes arrangement
GB0401613D0 (en) Organic light emitting diode
TWI367577B (en) Light-emitting diode chip and manufacturing method thereof
TWI347686B (en) Vertical nitride semiconductor light emitting diode and method of manufacturing the same
TWI369008B (en) Iii group nitride semiconductor light emitting element and lamp
TWI365546B (en) Light emitting diode device and fabrication method thereof
TWI351115B (en) Light-emitting diode module and the manufacturing method thereof
EP1622207A4 (en) LIGHT EMITTING DIODE
EP1900040A4 (en) LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
GB2426123B (en) Substrate-free flip chip light emitting diode and manufacturing method thereof
GB2413008B8 (en) GaN-based light-emitting diode structure
GB2420013B8 (en) Light emitting diode and fabrication method thereof
EP1908123B8 (en) Light-emitting semiconductor diode having high light-extraction efficiency
TWI340162B (en) Indene derivatives and organic light emitting diode using the same
EP1776723A4 (en) Semiconductor light emitting diode
TWI318802B (en) Semiconductor light-emitting diode
GB2437848B (en) Substrate-free chip light emitting diode and manufacturing method thereof

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160425