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GB2437784B - Q-modulated semiconductor laser with electro-absorptive grating structures - Google Patents

Q-modulated semiconductor laser with electro-absorptive grating structures

Info

Publication number
GB2437784B
GB2437784B GB0608555A GB0608555A GB2437784B GB 2437784 B GB2437784 B GB 2437784B GB 0608555 A GB0608555 A GB 0608555A GB 0608555 A GB0608555 A GB 0608555A GB 2437784 B GB2437784 B GB 2437784B
Authority
GB
United Kingdom
Prior art keywords
electro
semiconductor laser
grating structures
modulated semiconductor
absorptive grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0608555A
Other versions
GB0608555D0 (en
GB2437784A (en
Inventor
Jian-Jun He
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB0608555A priority Critical patent/GB2437784B/en
Publication of GB0608555D0 publication Critical patent/GB0608555D0/en
Publication of GB2437784A publication Critical patent/GB2437784A/en
Application granted granted Critical
Publication of GB2437784B publication Critical patent/GB2437784B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0615—Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06251—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
GB0608555A 2006-05-02 2006-05-02 Q-modulated semiconductor laser with electro-absorptive grating structures Expired - Fee Related GB2437784B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0608555A GB2437784B (en) 2006-05-02 2006-05-02 Q-modulated semiconductor laser with electro-absorptive grating structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0608555A GB2437784B (en) 2006-05-02 2006-05-02 Q-modulated semiconductor laser with electro-absorptive grating structures

Publications (3)

Publication Number Publication Date
GB0608555D0 GB0608555D0 (en) 2006-06-07
GB2437784A GB2437784A (en) 2007-11-07
GB2437784B true GB2437784B (en) 2011-05-11

Family

ID=36590089

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0608555A Expired - Fee Related GB2437784B (en) 2006-05-02 2006-05-02 Q-modulated semiconductor laser with electro-absorptive grating structures

Country Status (1)

Country Link
GB (1) GB2437784B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA3186204A1 (en) 2020-07-23 2022-01-27 Sylvain Boudreau Semiconductor lasers with improved frequency modulation response
US11876350B2 (en) 2020-11-13 2024-01-16 Ii-Vi Delaware, Inc. Multi-wavelength VCSEL array and method of fabrication

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104739A (en) * 1997-12-24 2000-08-15 Nortel Networks Corporation Series of strongly complex coupled DFB lasers
US6330265B1 (en) * 1998-04-21 2001-12-11 Kabushiki Kaisha Toshiba Optical functional element and transmission device
WO2003055019A1 (en) * 2001-12-11 2003-07-03 Photonami Inc. Phase shifted surface emitting dfb laser structures with gain or absorptive gratings
US20040105476A1 (en) * 2002-08-19 2004-06-03 Wasserbauer John G. Planar waveguide surface emitting laser and photonic integrated circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104739A (en) * 1997-12-24 2000-08-15 Nortel Networks Corporation Series of strongly complex coupled DFB lasers
US6330265B1 (en) * 1998-04-21 2001-12-11 Kabushiki Kaisha Toshiba Optical functional element and transmission device
WO2003055019A1 (en) * 2001-12-11 2003-07-03 Photonami Inc. Phase shifted surface emitting dfb laser structures with gain or absorptive gratings
US20040105476A1 (en) * 2002-08-19 2004-06-03 Wasserbauer John G. Planar waveguide surface emitting laser and photonic integrated circuit

Also Published As

Publication number Publication date
GB0608555D0 (en) 2006-06-07
GB2437784A (en) 2007-11-07

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20120502