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GB2417825B - Light emitting diode with diffraction lattice - Google Patents

Light emitting diode with diffraction lattice

Info

Publication number
GB2417825B
GB2417825B GB0419678A GB0419678A GB2417825B GB 2417825 B GB2417825 B GB 2417825B GB 0419678 A GB0419678 A GB 0419678A GB 0419678 A GB0419678 A GB 0419678A GB 2417825 B GB2417825 B GB 2417825B
Authority
GB
United Kingdom
Prior art keywords
light emitting
emitting diode
diffraction lattice
diffraction
lattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0419678A
Other versions
GB2417825A (en
GB0419678D0 (en
Inventor
Pei-Jih Wang
Pan-Tzu Chang
Wen-Chieh Huang
James Wang
Yury Georgievich Shreter
Yury Toomasovich Rebane
Ruslan Ivanovich Gorbunov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arima Optoelectronics Corp
Original Assignee
Arima Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Optoelectronics Corp filed Critical Arima Optoelectronics Corp
Priority to GB0419678A priority Critical patent/GB2417825B/en
Publication of GB0419678D0 publication Critical patent/GB0419678D0/en
Publication of GB2417825A publication Critical patent/GB2417825A/en
Application granted granted Critical
Publication of GB2417825B publication Critical patent/GB2417825B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
GB0419678A 2004-09-04 2004-09-04 Light emitting diode with diffraction lattice Expired - Fee Related GB2417825B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0419678A GB2417825B (en) 2004-09-04 2004-09-04 Light emitting diode with diffraction lattice

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0419678A GB2417825B (en) 2004-09-04 2004-09-04 Light emitting diode with diffraction lattice

Publications (3)

Publication Number Publication Date
GB0419678D0 GB0419678D0 (en) 2004-10-06
GB2417825A GB2417825A (en) 2006-03-08
GB2417825B true GB2417825B (en) 2006-11-22

Family

ID=33156029

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0419678A Expired - Fee Related GB2417825B (en) 2004-09-04 2004-09-04 Light emitting diode with diffraction lattice

Country Status (1)

Country Link
GB (1) GB2417825B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308457A (en) * 2000-04-24 2001-11-02 Matsushita Electric Ind Co Ltd Semiconductor face light emitting element
WO2002041406A1 (en) * 2000-11-16 2002-05-23 Emcore Corporation Microelectronic package having improved light extraction
JP2003086835A (en) * 2001-09-13 2003-03-20 Univ Tohoku Semiconductor light emitting device and method of manufacturing semiconductor light emitting device
US20030057444A1 (en) * 2001-07-24 2003-03-27 Nichia Corporation Semiconductor light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308457A (en) * 2000-04-24 2001-11-02 Matsushita Electric Ind Co Ltd Semiconductor face light emitting element
WO2002041406A1 (en) * 2000-11-16 2002-05-23 Emcore Corporation Microelectronic package having improved light extraction
US20030057444A1 (en) * 2001-07-24 2003-03-27 Nichia Corporation Semiconductor light emitting device
JP2003086835A (en) * 2001-09-13 2003-03-20 Univ Tohoku Semiconductor light emitting device and method of manufacturing semiconductor light emitting device

Also Published As

Publication number Publication date
GB2417825A (en) 2006-03-08
GB0419678D0 (en) 2004-10-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20170904