GB2413293A - Method of treating an effluent stream - Google Patents
Method of treating an effluent stream Download PDFInfo
- Publication number
- GB2413293A GB2413293A GB0408763A GB0408763A GB2413293A GB 2413293 A GB2413293 A GB 2413293A GB 0408763 A GB0408763 A GB 0408763A GB 0408763 A GB0408763 A GB 0408763A GB 2413293 A GB2413293 A GB 2413293A
- Authority
- GB
- United Kingdom
- Prior art keywords
- reactant
- fluid stream
- pump
- foreline
- foam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000000376 reactant Substances 0.000 claims abstract description 40
- 239000012530 fluid Substances 0.000 claims abstract description 35
- 239000006260 foam Substances 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 13
- 239000011737 fluorine Substances 0.000 claims abstract description 13
- 238000002156 mixing Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- VPAYJEUHKVESSD-UHFFFAOYSA-N trifluoroiodomethane Chemical compound FC(F)(F)I VPAYJEUHKVESSD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract 5
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract description 2
- 230000000593 degrading effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910003638 H2SiF6 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 210000003041 ligament Anatomy 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000006262 metallic foam Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 oxides Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/68—Halogens or halogen compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2251/00—Reactants
- B01D2251/20—Reductants
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Biomedical Technology (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Treating Waste Gases (AREA)
Abstract
A method of treating an effluent fluid stream from a semiconductor manufacturing process tool comprises the steps of injecting a reactant through a plurality of nozzles 18 into a pump foreline for reacting with a component of the effluent stream, and mixing turbulently the effluent stream and reactant before the fluid stream enters the pump. Preferably the reactant contains fluorine e.g. HF, NF3, CIF3, F. The turbulent mixing may be achieved using a foam structure 20 having a plurality of voids creating a tortuous path. Ideally, the foam is formed from a metallic or ceramic material. This helps to prevent film deposition and plating in the pump and stops aggressive, unconsumed gas molecules corroding and degrading the pump.
Description
24 1 3293 - 1
METHOD OF TREATING AN EFFLUENT FLUID STREAM
This invention relates to a method of, and apparatus for, treating an effluent fluid stream. The invention finds particular use in the treatment of an exhaust stream s from a process tool used in the semiconductor manufacturing industry.
During semiconductor processes such as chemical vapour deposition processing, deposition gases are supplied to a process chamber to form a deposition layer on the surface of a substrate. As the residence time in the chamber of the deposition to gas is relatively short, only a small proportion of the gas supplied to the chamber is consumed during the deposition process. Consequently, unconsumed gas molecules pumped from the chamber by a vacuum pump can pass through the pump in a highly reactive state. As a result, pump components can be subjected to damage due to corrosion and degradation resulting from the pumping of Is aggressive, unconsumed gas molecules, and also to film deposition and plating resulting from the reaction within the pump of the unconsumed gas molecules.
A number of semiconductor processes can also produce a significant amount of by-product material in the form of powder or dust, which may remain loose or go become compacted, or in the form of hard solids, especially if the process gas is condensable and sublimes on lower temperature surfaces. This material can be formed in the process chamber, in the vacuum line, or "foreline", between the chamber and the pump, and/or in the vacuum pump itself. If such material accumulates on the internal surfaces of the pump during its operation, this can us effectively fill the vacant running clearance between the rotor and stator elements on the pump, and can also cause spikes in the current demand on the motor of the vacuum pump. If this continues unabated, then this build-up of solid material can eventually cause the motor to become overloaded, and thus cause the control system to shut down the vacuum pump. Should the pump be allowed to cool so down to ambient temperature, then this accumulated material will become compressed between the rotor and stator elements. Due to the relatively large surface area of potential contact that this creates between the rotor and stator - 2 elements, such compression of by- product material can increase the frictional forces opposing rotation by an order of magnitude.
In at least its preferred embodiments, the present invention aims to provide seeks s to solve these and other problems.
In accordance with one aspect of the present invention, there is provided a method of treating an effluent fluid stream from a semiconductor manufacturing process tool, the method comprising the steps of injecting into a pump foreline a reactant Jo for reacting with a component of the fluid stream, and mixing turbulently the fluid stream and the reactant before the fluid stream enters the pump.
This can provide for in situ conversion of one or more components, for example, gaseous or solid components, of an effluent stream exhaust from a process Is chamber into one or more by-products which are less harmful to the pump.
Turbulent mixing of the fluid stream and the reactant before the fluid stream enters the pump can increase the residence time in the foreline of the effluent stream and the reactant before the stream enters the pump, thereby promoting the conversion of the component of the effluent stream into a species which is less harmful to the pump.
The reactant is preferably injected into the foreline through a plurality of apertures, which are preferably spaced along and/or about the foreline.
us In the preferred embodiments, the turbulent mixing is performed within a structure defining a tortuous path for the fluid stream and the reactant. This structure preferably comprises a plurality of voids defining a low flow-resistance, tortuous path, and may be conveniently provided in the form of a foam. The large surface area to volume ratio of a foam and the tortuous path through the foam can provide so for thorough micro-turbulent blending of the effluent stream and the injected reactant. The three-dimensional, continuous ligament structure of a foam can capture liquid and solid particles within the effluent stream, which can be l - 3 subsequently converted into volatile products upon reaction with the injected reactant.
The reactant injected into the foreline is preferably a fluorochemical, or fluorine containing reactant, and may comprise one of HE, NF3, CIF3, F2., or other fluoridating agent. Thus, in a second aspect the present invention provides a method of treating an effluent fluid stream from a semiconductor manufacturing process tool, the method comprising the step of injecting into a pump foreline a fluorine-containing reactant for reacting with a component of the fluid stream.
The present invention also provides apparatus for treating an effluent fluid stream from a semiconductor manufacturing process tool, the apparatus comprising means for injecting into a pump foreline a reactant for reacting with a component of the fluid stream, and, within the foreline, means defining a tortuous path for the fluid stream and the reactant to promote mixing thereof.
The present invention further provides apparatus for treating an effluent fluid stream from a semiconductor manufacturing process tool, the apparatus comprising a source of a fluorine-containing reactant, and means for injecting the go reactant into a pump foreline to react with a component of the fluid stream.
The present invention also extends to semiconductor processing apparatus comprising a process chamber, a pump for evacuating the process chamber, and, located between the chamber and the pump, apparatus as aforementioned for treating an effluent fluid stream exhaust from the chamber.
Features described above in relation to method aspects of the invention are equally applicable to apparatus aspects, and vice versa.
so By way of example, an embodiment of the invention will now be further described with reference to the following Figures in which: - 4 - ! I Figure 1 illustrates schematically a first embodiment of apparatus according to the invention; Figure 2 is a magnified view of an example of the foam of the apparatus of Figure s 1;and Figure 3 illustrates schematically a second embodiment of apparatus according to the invention.
to With reference first to Figure 1, a first embodiment of an apparatus for treating an effluent fluid stream from a semiconductor processing tool, such as a chemical vapour deposition (CVD) tool or an atomic layer deposition (ALD) tool, is located within the foreline extending between the process chamber and the pump evacuating the process chamber, and through which the effluent stream is Is conveyed. The apparatus comprises a corrosion-resistant metallic, for example, stainless steel, or ceramic housing 10. The ends of the housing 10 may be provided with means (not shown), such as flanges or screw threads, suitable for connecting the inlet 12 and the outlet 14 of the housing 10 to piping or the like for conveying the effluent stream from the process chamber to the pump.
Within the housing 10 are located one or more stainless steel pipes 16 extending about the longitudinal axis of the housing 10. A single helical pipe 16 may be located within the housing 10, or a plurality of annular pipes 16 may be provided, mutually spaced along the axis of the housing. The, or each, pipe 16 is arranged to receive a gaseous reactant, for example a fluorine-containing reactant such as HE, NF3, CIF3 and F2, and to inject the reactant into the housing through fine delivery holes or apertures 18 formed in the pipe 16.
Also located within the housing 10, preferably, as shown, downstream from at so least one, or part of the, pipe 12 is a metallic or ceramic foam 20 extending the width of the internal bore of the housing 10. The foam may have a solid outer wall, as identified at 21 in Figure 1, or may be provided with a layer of corrosion - 5 - .. . resistant material extending thereabout. Figure 2 is a magnified view of the foam 20, which comprises a plurality of voids 22 defining a low flow- resistance, tortuous path forfluid passing through the housing 10.
In use, the effluent stream enters the housing 10 through the inlet 14. The reactant is injected into the housing 10 through the apertures 18 in the pipe 16 to react with gaseous or solid components of the effluent stream, for example, silanes, ammonia, oxides, nitrides and chlorides, to convert those components into one or more by-products which are less harmful to the pump connected to the to outlet 16 of the housing 10.
For example, silanes present in the effluent stream can decompose within the pump to form amorphous films. However, in the presence of fluorine (F2), silane (SiH4) reacts to form a volatile product (SiF4), which passes through the pump.
Silicon oxide (sio2) particles within the effluent stream react in the presence of either F2 or HE to form volatile products (SiF4 and H2SiF6 respectively). Silicon nitride films can also form within the pump when ammonia is present in the effluent stream. Ammonia can also degrade elastomeric seals typically used within pumps. However, in the presence of fluorine, ammonia reacts to form nitrogen and HF. In general, fluorine is the most electronegative element, and hence readily reacts with most other elements and their compounds. Hence, by injecting fluorine into the foreline, thermodynamics will tend to favour its reactions to the detriment of others, such as reactions between components of the effluent stream, that may impact on the pump.
Micro-turbulent blending of the effluent stream and reactant occurs as the effluent stream and reactant flow through the foam 20 towards the outlet 16, ensuring thorough mixing of the effluent stream and reactant. The tortuous flow path defined by the voids 22 of the foam 20 also increases the residence time in the foreline of the effluent stream and the reactant before the effluent stream enters the pump, thereby promoting the conversion of the components of the effluent stream into the less harmful by-products. - 6
-
The foam may be formed from a suitable material. A metallic foam can provide continuous, highly conductive heat paths which can serve to warm condensable gases and cool reactive, corrosive gases prior to entry into the pump, thereby reducing the impact of the introduction of such gases into the pump. A ceramic foam can allow mixing to be performed at a higher temperature. With up to 97% void volume and low flow resistance, the foam 20 does not significantly affect the fluid conductance of the foreline.
lo Figure 3 illustrates a second embodiment of an apparatus for treating an effluent fluid stream from a semiconductor processing tool. This second embodiment is similar to the first embodiment, save that the foam 20 of the first embodiment has been replaced by foam 24 in the form of an externally screw-threaded foam 24.
The foam 24 may be formed from a ceramic, from a metal, or from a combination of metal and ceramic, for example aluminium foam with a ceramic coating to impart corrosion, abrasion and thermal resistance to the metal. - 7
Claims (26)
1. A method of treating an effluent fluid stream from a semiconductor s manufacturing process tool, the method comprising the steps of injecting into a pump foreline a reactant for reacting with a component of the fluid stream, and mixing turbulently the fluid stream and the reactant before the fluid stream enters the pump.
lo
2. A method according to Claim 1, wherein the reactant is injected into the foreline through a plurality of apertures.
3. A method according to Claim 2, wherein the apertures are spaced along and/or about the foreline.
4. A method according to any preceding claim, wherein the turbulent mixing is performed within a structure defining a tortuous path for the fluid stream and the reactant.
5. A method according to Claim 4, wherein the structure comprises a plurality of voids defining the tortuous path.
6. A method according to Claim 4 or Claim 5, wherein the structure comprises a foam.
7. A method according to Claim 6, wherein the foam is formed from metallic or ceramic material.
8. A method according to Claim 6 or Claim 7, wherein the foam is so externally screw-threaded. - 8
9. A method according to any of Claims 6 to 8, wherein the foam is located within a corrosion-resistant housing.
10. A method according to Claim 9, wherein the housing is formed from metallic or ceramic material.
11. A method according to any preceding claim, wherein a fluorine containing reactant is injected into the foreline.
lo
12. A method according to any preceding claim, wherein the reactant comprises one of HE, NF3, CIF3 and F2.
13. A method of treating an effluent fluid stream from a semiconductor manufacturing process tool, the method comprising the step of Is injecting into a pump foreline a fluorine-containing reactant for reacting with a component of the fluid stream.
14. Apparatus for treating an effluent fluid stream from a semiconductor manufacturing process tool, the apparatus comprising means for do injecting into a pump foreline a reactant for reacting with a component of the fluid stream, and, within the foreline, means defining a tortuous path for the fluid stream and the reactant to promote mixing thereof.
us
15. Apparatus according to Claim 14, wherein the injection means comprises a plurality of apertures through which the reactant is injected into the foreline.
16. Apparatus according to Claim 15, wherein the apertures are spaced so along and about the foreline. - 9 -
17. Apparatus according to any of Claims 14 to 16, wherein the means defining a tortuous path comprises a structure having a plurality of voids defining the tortuous path.
18. Apparatus according to Claim 17, wherein the structure comprises a foam.
19. Apparatus according to Claim 18, wherein the foam is formed from metallic or ceramic material.
20. Apparatus according to Claim 18 or Claim 19, wherein the foam is externally screw-threaded.
21. Apparatus according to any of Claims 18 to 20, wherein the foam is Is located within a corrosion-resistant housing.
22. Apparatus according to Claim 21, wherein the housing is formed from metallic or ceramic material.
go
23. Apparatus according to any of Claims 14 to 22, wherein the injecting means is arranged to inject a fluorine-containing reactant into the foreline.
24. Apparatus according to any of Claims 14 to 23, wherein the reactant us comprises one of HE, NF3, CIF3 and F2
25. Apparatus for treating an effluent fluid stream from a semiconductor manufacturing process tool, the apparatus comprising a source of a fluorine-containing reactant, and means for injecting the reactant into so a pump foreline to react with a component of the fluid stream. -
26. Semiconductor processing apparatus comprising a process chamber, a pump for evacuating the process chamber, and, located between the chamber and the pump, apparatus according to any of Claims 14 to 25 for treating an effluent fluid stream exhaust from the chamber. s
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0408763A GB2413293A (en) | 2004-04-20 | 2004-04-20 | Method of treating an effluent stream |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0408763A GB2413293A (en) | 2004-04-20 | 2004-04-20 | Method of treating an effluent stream |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0408763D0 GB0408763D0 (en) | 2004-05-26 |
| GB2413293A true GB2413293A (en) | 2005-10-26 |
Family
ID=32344054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0408763A Withdrawn GB2413293A (en) | 2004-04-20 | 2004-04-20 | Method of treating an effluent stream |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2413293A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01293120A (en) * | 1988-05-23 | 1989-11-27 | Nec Corp | Treatment of waste gas |
| JPH115012A (en) * | 1997-06-16 | 1999-01-12 | Kenji Inoue | Waste gas treatment and treating device |
| JP2001015499A (en) * | 1999-06-28 | 2001-01-19 | Tokyo Electron Ltd | Heat-treating device |
| US20030017087A1 (en) * | 2001-07-18 | 2003-01-23 | Applied Materials Inc. | Process and apparatus for abatement of by products generated from deposition processes and cleaning of deposition chambers |
| US20030037730A1 (en) * | 1999-03-11 | 2003-02-27 | Tokyo Electron Limited | Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD system |
| GB2382788A (en) * | 2001-07-24 | 2003-06-11 | Bosch Gmbh Robert | Process for preventing or removing deposits in the exhaust gas region of a vacuum installation |
-
2004
- 2004-04-20 GB GB0408763A patent/GB2413293A/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01293120A (en) * | 1988-05-23 | 1989-11-27 | Nec Corp | Treatment of waste gas |
| JPH115012A (en) * | 1997-06-16 | 1999-01-12 | Kenji Inoue | Waste gas treatment and treating device |
| US20030037730A1 (en) * | 1999-03-11 | 2003-02-27 | Tokyo Electron Limited | Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD system |
| JP2001015499A (en) * | 1999-06-28 | 2001-01-19 | Tokyo Electron Ltd | Heat-treating device |
| US20030017087A1 (en) * | 2001-07-18 | 2003-01-23 | Applied Materials Inc. | Process and apparatus for abatement of by products generated from deposition processes and cleaning of deposition chambers |
| GB2382788A (en) * | 2001-07-24 | 2003-06-11 | Bosch Gmbh Robert | Process for preventing or removing deposits in the exhaust gas region of a vacuum installation |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0408763D0 (en) | 2004-05-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |