GB2410372B - Semiconductor memory devices and methods for manufacturing the same using sidewall spacers - Google Patents

Semiconductor memory devices and methods for manufacturing the same using sidewall spacers

Info

Publication number: GB2410372B
Authority: GB; United Kingdom
Prior art keywords: manufacturing; methods; same; semiconductor memory; memory devices
Prior art date: 2002-06-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

GB0500290A

Other versions

GB2410372A (en

GB0500290D0 (en

Inventor

Byung-Jun Park

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Samsung Electronics Co Ltd

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-06-27

Filing date

2003-06-24

Publication date

2005-11-30

2002-06-27 Priority claimed from KR10-2002-0036414A external-priority patent/KR100434506B1/en

2002-06-28 Priority claimed from KR10-2002-0037059A external-priority patent/KR100480602B1/en

2003-06-24 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

2003-06-24 Priority claimed from GB0314707A external-priority patent/GB2392311B/en

2005-02-16 Publication of GB0500290D0 publication Critical patent/GB0500290D0/en

2005-07-27 Publication of GB2410372A publication Critical patent/GB2410372A/en

2005-11-30 Application granted granted Critical

2005-11-30 Publication of GB2410372B publication Critical patent/GB2410372B/en

2023-06-24 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/01—Manufacture or treatment
- H10D1/041—Manufacture or treatment of capacitors having no potential barriers
- H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Semiconductor Memories (AREA)

GB0500290A 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers Expired - Fee Related GB2410372B (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
KR10-2002-0036414A KR100434506B1 (en)	2002-06-27	2002-06-27	Semiconductor memory device and method for manufacturing the same
KR10-2002-0037059A KR100480602B1 (en)	2002-06-28	2002-06-28	Semiconductor memory device and method for manufacturing the same
GB0314707A GB2392311B (en)	2002-06-27	2003-06-24	Semiconductor memory devices and methods for manufacturing the same using sidewall spacers

Publications (3)

Publication Number	Publication Date
GB0500290D0 GB0500290D0 (en)	2005-02-16
GB2410372A GB2410372A (en)	2005-07-27
GB2410372B true GB2410372B (en)	2005-11-30

Family

ID=34743278

Family Applications (5)

Application Number	Title	Priority Date	Filing Date
GB0500290A Expired - Fee Related GB2410372B (en)	2002-06-27	2003-06-24	Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500295A Expired - Fee Related GB2410376B (en)	2002-06-27	2003-06-24	Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500293A Expired - Fee Related GB2410374B (en)	2002-06-27	2003-06-24	Methods for manufacturing semiconductor memory using sidewall spacers
GB0500291A Expired - Fee Related GB2410373B (en)	2002-06-27	2003-06-24	Semi conductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500294A Expired - Fee Related GB2410375B (en)	2002-06-27	2003-06-24	Semiconductor memory devices and methods for manufacturing the same using sidewall spacers

Family Applications After (4)

Application Number	Title	Priority Date	Filing Date
GB0500295A Expired - Fee Related GB2410376B (en)	2002-06-27	2003-06-24	Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500293A Expired - Fee Related GB2410374B (en)	2002-06-27	2003-06-24	Methods for manufacturing semiconductor memory using sidewall spacers
GB0500291A Expired - Fee Related GB2410373B (en)	2002-06-27	2003-06-24	Semi conductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500294A Expired - Fee Related GB2410375B (en)	2002-06-27	2003-06-24	Semiconductor memory devices and methods for manufacturing the same using sidewall spacers

Country Status (1)

Country	Link
GB (5)	GB2410372B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6025624A (en) *	1998-06-19	2000-02-15	Micron Technology, Inc.	Shared length cell for improved capacitance

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5550076A (en) *	1995-09-11	1996-08-27	Vanguard International Semiconductor Corp.	Method of manufacture of coaxial capacitor for dram memory cell and cell manufactured thereby
US5856220A (en) *	1996-02-08	1999-01-05	Taiwan Semiconductor Manufacturing Company, Ltd.	Method for fabricating a double wall tub shaped capacitor
US5721154A (en) *	1996-06-18	1998-02-24	Vanguard International Semiconductor	Method for fabricating a four fin capacitor structure
GB2321771A (en) *	1996-08-16	1998-08-05	United Microelectronics Corp	Stacked capacitor
US6063656A (en) *	1997-04-18	2000-05-16	Micron Technology, Inc.	Cell capacitors, memory cells, memory arrays, and method of fabrication
US5854105A (en) *	1997-11-05	1998-12-29	Vanguard International Semiconductor Corporation	Method for making dynamic random access memory cells having double-crown stacked capacitors with center posts
US5913119A (en) *	1998-06-26	1999-06-15	Vanguard Int Semiconduct Corp	Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure

2003
- 2003-06-24 GB GB0500290A patent/GB2410372B/en not_active Expired - Fee Related
- 2003-06-24 GB GB0500295A patent/GB2410376B/en not_active Expired - Fee Related
- 2003-06-24 GB GB0500293A patent/GB2410374B/en not_active Expired - Fee Related
- 2003-06-24 GB GB0500291A patent/GB2410373B/en not_active Expired - Fee Related
- 2003-06-24 GB GB0500294A patent/GB2410375B/en not_active Expired - Fee Related

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6025624A (en) *	1998-06-19	2000-02-15	Micron Technology, Inc.	Shared length cell for improved capacitance

Also Published As

Publication number	Publication date
GB0500291D0 (en)	2005-02-16
GB0500293D0 (en)	2005-02-16
GB2410373A (en)	2005-07-27
GB2410376B (en)	2005-11-30
GB2410372A (en)	2005-07-27
GB2410375A (en)	2005-07-27
GB0500295D0 (en)	2005-02-16
GB0500294D0 (en)	2005-02-16
GB2410373B (en)	2006-03-22
GB2410375B (en)	2005-11-30
GB2410376A (en)	2005-07-27
GB2410374B (en)	2005-11-30
GB2410374A (en)	2005-07-27
GB0500290D0 (en)	2005-02-16

Publication	Publication Date	Title
GB2392311B (en)	2005-02-23	Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
TWI348218B (en)	2011-09-01	Semiconductor chip and method for manufacturing the same
GB2387967B (en)	2004-07-07	Semiconductor device and method of manufacturing the same
AU2003252675A1 (en)	2004-02-09	Nonvolatile semiconductor storage device and manufacturing method
TWI340471B (en)	2011-04-11	Semiconductor device and manufacturing method thereof
AU2003211857A1 (en)	2003-09-29	Semiconductor device and its manufacturing method
AU2003211888A1 (en)	2003-09-22	Semiconductor device and its manufacturing method
AU2003280487A1 (en)	2004-01-19	Semiconductor device and its manufacturing method
AU2003220830A1 (en)	2003-09-22	Semiconductor manufacturing method and device thereof
AU2003226646A8 (en)	2003-10-27	Semiconductor device
AU2003244275A1 (en)	2004-01-19	Semiconductor device and its manufacturing method
AU2003234812A8 (en)	2003-12-22	Semiconductor device
GB0312512D0 (en)	2003-07-09	Termination structures for semiconductor devices and the manufacture thereof
TWI348216B (en)	2011-09-01	Manufacturing method for semiconductor device and semiconductor device
AU2003254947A1 (en)	2004-05-04	Semiconductor ferroelectric storage device and its manufacturing method
GB2406970B (en)	2005-12-07	Semiconductor device
AU2003236254A1 (en)	2003-10-27	Semiconductor device and its manufacturing method
AU2003207387A1 (en)	2003-09-04	Organic semiconductor device and method for manufacturing the same
GB2392557B (en)	2004-11-17	Semiconductor device and method of manufacturing the same
AU2003235175A1 (en)	2003-10-27	Semiconductor device and its manufacturing method
AU2003294845A1 (en)	2004-06-30	Semiconductor memory and fabrication method
AU2003211950A1 (en)	2003-09-04	Semiconductor device and its manufacturing method
AU2003221000A1 (en)	2003-10-13	Semiconductor device and its manufacturing method
GB2374705B (en)	2003-05-07	Semiconductor memory device and manufacturing method thereof
GB0218359D0 (en)	2002-09-18	Semiconductor Devices

Legal Events

Date	Code	Title	Description
2010-02-24	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20090624