[go: up one dir, main page]

GB2406582A - Acoustic resonators - Google Patents

Acoustic resonators Download PDF

Info

Publication number
GB2406582A
GB2406582A GB0501682A GB0501682A GB2406582A GB 2406582 A GB2406582 A GB 2406582A GB 0501682 A GB0501682 A GB 0501682A GB 0501682 A GB0501682 A GB 0501682A GB 2406582 A GB2406582 A GB 2406582A
Authority
GB
United Kingdom
Prior art keywords
primer
layer
electrode
layers
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0501682A
Other versions
GB0501682D0 (en
Inventor
Christine Janet Shearer
Carl David Monnington Brancher
Rajkumar Jakkaraju
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trikon Technologies Ltd
Original Assignee
Trikon Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0218762A external-priority patent/GB0218762D0/en
Priority claimed from GB0227981A external-priority patent/GB0227981D0/en
Application filed by Trikon Technologies Ltd filed Critical Trikon Technologies Ltd
Publication of GB0501682D0 publication Critical patent/GB0501682D0/en
Publication of GB2406582A publication Critical patent/GB2406582A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

An acoustic resonator of one inventive aspect includes a substrate, at least one generally crystalline primer layer provided on the substrate either directly or on top of one or more intermediate layers, a generally smooth and generally crystalline electrode layer provided on the primer layer, and a piezoelectric layer provided on the electrode layer. The primer layer, or at least one of the primer layers, has a crystallographic structure belonging to a first crystal system, and the electrode layer has a crystallographic structure belonging to a second crystal system which is different to the first system. The atomic spacing of the primer layer or at least one of the said primer layers and that of the electrode matches to within about 15 %.

Description

GB 2406582 A continuation (72) Inventor(s): (56) cont Christine Janet
Shearer LEE S-H ET AL: Influence of electrodes and Bragg Carl David Monnington Brancher reflector on the quality of thin film bulk acoustic wave Ralkumar Jakkaraju resonators.2002 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM AND PDA EXHIBITION, NEW (74) Agent and/or Address for Service: ORLEANS, USA, 29 May 2002 - 31 May 2002 pages 45 Wynne-Jones, Laine & James 49, XP010618917 22 Rodney Road, CHELTENHAM, Gloucestershire, GL50 1JJ, (58) Field of Search by ISA: United Kingdom INT CL7 C23C, C30B, H01L, HUSH 0th or:
GB0501682A 2002-08-13 2003-08-11 Acoustic resonators Withdrawn GB2406582A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US40272802P 2002-08-13 2002-08-13
GB0218762A GB0218762D0 (en) 2002-08-13 2002-08-13 Acoustic resonators
GB0227981A GB0227981D0 (en) 2002-11-30 2002-11-30 Acoustic resonators
PCT/GB2003/003504 WO2004015862A2 (en) 2002-08-13 2003-08-11 Acoustic resonators

Publications (2)

Publication Number Publication Date
GB0501682D0 GB0501682D0 (en) 2005-03-02
GB2406582A true GB2406582A (en) 2005-04-06

Family

ID=31721069

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0501682A Withdrawn GB2406582A (en) 2002-08-13 2003-08-11 Acoustic resonators

Country Status (5)

Country Link
JP (2) JP5116945B2 (en)
AU (1) AU2003252992A1 (en)
DE (1) DE10393038B4 (en)
GB (1) GB2406582A (en)
WO (1) WO2004015862A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6944922B2 (en) * 2002-08-13 2005-09-20 Trikon Technologies Limited Method of forming an acoustic resonator
JP5983164B2 (en) * 2012-08-07 2016-08-31 旭硝子株式会社 Glass substrate with Ti film, glass substrate with metal film using the same, glass substrate with Ti film, method for producing glass substrate with metal film using the same, and method for evaluating flatness of glass substrate surface
CN104767500B (en) * 2014-01-03 2018-11-09 佛山市艾佛光通科技有限公司 Cavity type thin film bulk acoustic wave resonator and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587620A (en) * 1993-12-21 1996-12-24 Hewlett-Packard Company Tunable thin film acoustic resonators and method for making the same
EP0963040A2 (en) * 1998-06-02 1999-12-08 Hewlett-Packard Company Acoustic resonator and method for making the same
EP1054460A2 (en) * 1999-05-20 2000-11-22 TDK Corporation Thin film piezoelectric device for acoustic resonators
US20020006733A1 (en) * 2000-04-27 2002-01-17 Tdk Corporation Multilayer thin film and its fabrication process as well as electron device
GB2391408A (en) * 2002-07-30 2004-02-04 Agilent Technologies Inc FBAR thin-film resonator with protective layer
US20040021400A1 (en) * 2002-07-30 2004-02-05 Bradley Paul D. Resonator with seed layer

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4482833A (en) * 1981-04-01 1984-11-13 Westinghouse Electric Corp. Method for obtaining oriented gold and piezoelectric films
US4502932A (en) * 1983-10-13 1985-03-05 The United States Of America As Represented By The United States Department Of Energy Acoustic resonator and method of making same
JPS61170561A (en) * 1985-01-25 1986-08-01 Nippon Telegr & Teleph Corp <Ntt> Formation of high melting point metal film
JP2659394B2 (en) * 1988-05-09 1997-09-30 三井東圧化学株式会社 Semiconductor thin film manufacturing method
KR960000190B1 (en) * 1992-11-09 1996-01-03 엘지전자주식회사 Semiconductor manufacturing method and apparatus thereof
JPH10308393A (en) * 1997-05-02 1998-11-17 Tokyo Electron Ltd Manufacture and manufacturing device of semiconductor device
JP3813740B2 (en) * 1997-07-11 2006-08-23 Ｔｄｋ株式会社 Substrates for electronic devices
JP2000160337A (en) * 1998-11-30 2000-06-13 Hitachi Ltd Magnetron sputtering device
JP2000273629A (en) * 1999-03-18 2000-10-03 Ulvac Japan Ltd Formation of low resistance metallic thin film
GB2349392B (en) * 1999-04-20 2003-10-22 Trikon Holdings Ltd A method of depositing a layer
US6349454B1 (en) * 1999-07-29 2002-02-26 Agere Systems Guardian Corp. Method of making thin film resonator apparatus
JP4021601B2 (en) * 1999-10-29 2007-12-12 株式会社東芝 Sputtering apparatus and film forming method
US7378001B2 (en) * 2000-07-27 2008-05-27 Aviza Europe Limited Magnetron sputtering
JP4016583B2 (en) * 2000-08-31 2007-12-05 株式会社村田製作所 Piezoelectric thin film resonator, filter and electronic device
US6377137B1 (en) * 2000-09-11 2002-04-23 Agilent Technologies, Inc. Acoustic resonator filter with reduced electromagnetic influence due to die substrate thickness
JP2002374145A (en) * 2001-06-15 2002-12-26 Ube Electronics Ltd Piezoelectric thin-film resonator

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587620A (en) * 1993-12-21 1996-12-24 Hewlett-Packard Company Tunable thin film acoustic resonators and method for making the same
EP0963040A2 (en) * 1998-06-02 1999-12-08 Hewlett-Packard Company Acoustic resonator and method for making the same
EP1054460A2 (en) * 1999-05-20 2000-11-22 TDK Corporation Thin film piezoelectric device for acoustic resonators
US20020006733A1 (en) * 2000-04-27 2002-01-17 Tdk Corporation Multilayer thin film and its fabrication process as well as electron device
GB2391408A (en) * 2002-07-30 2004-02-04 Agilent Technologies Inc FBAR thin-film resonator with protective layer
US20040021400A1 (en) * 2002-07-30 2004-02-05 Bradley Paul D. Resonator with seed layer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LEE S-H ET AL: Influence of electrodes and Bragg reflector on the quality of thin film bulk acoustic wave resonators.2002 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM AND PDA EXHIBITION, NEW ORLEANS, USA, 29 May 2002 - 31 May 2002 pages 45 - 49, XP010618917 *
Y YOSHINO ET AL: Effect of buffer electrodes in crystallization of zinc oxide thin film for thin film bulk acoustic wave resonator. MATERIALS SCIENCE OF MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES 11.SYMPOSIUM, BOSTON, USA, 29 NOVEMBER 1999 - 1 DECEMBER 1999 pages 267-272. XP009030776 *

Also Published As

Publication number Publication date
WO2004015862A2 (en) 2004-02-19
WO2004015862A3 (en) 2004-10-14
JP5074540B2 (en) 2012-11-14
JP5116945B2 (en) 2013-01-09
JP2005536098A (en) 2005-11-24
JP2010161781A (en) 2010-07-22
GB0501682D0 (en) 2005-03-02
DE10393038T5 (en) 2005-07-28
AU2003252992A1 (en) 2004-02-25
DE10393038B4 (en) 2013-11-07

Similar Documents

Publication Publication Date Title
US4484098A (en) Environmentally stable lithium niobate acoustic wave devices
Kimura Interrelation between VLF and ULF emissions
GB2120037A (en) Surface acoustic wave device
JP2001524296A (en) Surface acoustic wave device and bulk acoustic wave device using Zn lower (1-X) Y lower X O piezoelectric layer device
EP0034351B1 (en) Surface acoustic wave device
CN1048636A (en) surface acoustic wave device
JPH0161252B2 (en)
GB2406582A (en) Acoustic resonators
US4499395A (en) Cut angles for quartz crystal resonators
FR2277437A1 (en) TEMPERATURE STABILIZED SUBSTRATE FOR THE PROPAGATION OF SURFACE ACOUSTIC WAVES
US4501987A (en) Surface acoustic wave transducer using a split-finger electrode on a multi-layered substrate
US4109173A (en) High piezoelectric coupling, low diffraction loss, temperature compensated berlinite substrate members for surface acoustic wave devices
US4323809A (en) Surface acoustic wave substrate having orthogonal temperature compensated propagation directions and device applications
ATA8482001A (en) PIEZOELECTRIC RESONATOR ELEMENT OF THE CRYSTALLOGRAPHIC POINT GROUP 32
GB1430398A (en) Temperature compensation piezoelectric oscillator
US4602182A (en) X33 cut quartz for temperature compensated SAW devices
JP3194442B2 (en) SC-cut crystal unit
JPS57155820A (en) Unidirectional saw exciter
Karrer et al. Surface acoustic wave oscillators
EP0140002A3 (en) Temperature-compensated orientation of berlinite for surface acoustic wave devices
Kosinski et al. An analysis of the normal acceleration sensitivity of rotated Y-cut quartz surface transverse wave resonators simply supported along rectangular edges
JPH05199065A (en) Surface acoustic wave element
KR970052123A (en) Manufacturing Method of ZnO Thin Film
JPS61247113A (en) Oblique vapor deposition surface acoustic wave function element
Lee et al. Parametric study of acceleration insensitivity of doubly rotated circular quartz resonators

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)