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GB2393574B - Method of manufacturing a thin film transistor - Google Patents

Method of manufacturing a thin film transistor

Info

Publication number
GB2393574B
GB2393574B GB0330021A GB0330021A GB2393574B GB 2393574 B GB2393574 B GB 2393574B GB 0330021 A GB0330021 A GB 0330021A GB 0330021 A GB0330021 A GB 0330021A GB 2393574 B GB2393574 B GB 2393574B
Authority
GB
United Kingdom
Prior art keywords
manufacturing
thin film
film transistor
transistor
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0330021A
Other versions
GB2393574A (en
GB0330021D0 (en
Inventor
Shin-Itsu Takehashi
Shigeo Ikuta
Tetsuo Kawakita
Mayumi Inque
Keizaburo Kuramasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority claimed from GB0027543A external-priority patent/GB2354882B/en
Publication of GB0330021D0 publication Critical patent/GB0330021D0/en
Publication of GB2393574A publication Critical patent/GB2393574A/en
Application granted granted Critical
Publication of GB2393574B publication Critical patent/GB2393574B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6719—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
GB0330021A 1999-03-10 2000-03-09 Method of manufacturing a thin film transistor Expired - Fee Related GB2393574B (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP6276799 1999-03-10
JP8005199 1999-03-24
JP8331499 1999-03-26
JP8331999 1999-03-26
JP8331699 1999-03-26
GB0027543A GB2354882B (en) 1999-03-10 2000-03-09 Thin film transistor panel and their manufacturing method

Publications (3)

Publication Number Publication Date
GB0330021D0 GB0330021D0 (en) 2004-01-28
GB2393574A GB2393574A (en) 2004-03-31
GB2393574B true GB2393574B (en) 2004-06-02

Family

ID=31950912

Family Applications (5)

Application Number Title Priority Date Filing Date
GB0330024A Expired - Fee Related GB2393576B (en) 1999-03-10 2000-03-09 LCD substrate
GB0408229A Expired - Fee Related GB2396743B (en) 1999-03-10 2000-03-09 Thin film transistor
GB0330021A Expired - Fee Related GB2393574B (en) 1999-03-10 2000-03-09 Method of manufacturing a thin film transistor
GB0330022A Expired - Fee Related GB2393575B (en) 1999-03-10 2000-03-09 Method of manufacturing a thin film transistor
GB0408368A Expired - Fee Related GB2396744B (en) 1999-03-10 2000-03-09 A semiconductor element

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GB0330024A Expired - Fee Related GB2393576B (en) 1999-03-10 2000-03-09 LCD substrate
GB0408229A Expired - Fee Related GB2396743B (en) 1999-03-10 2000-03-09 Thin film transistor

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB0330022A Expired - Fee Related GB2393575B (en) 1999-03-10 2000-03-09 Method of manufacturing a thin film transistor
GB0408368A Expired - Fee Related GB2396744B (en) 1999-03-10 2000-03-09 A semiconductor element

Country Status (1)

Country Link
GB (5) GB2393576B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11121263B2 (en) * 2019-08-27 2021-09-14 Apple Inc. Hydrogen trap layer for display device and the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104279A (en) * 1992-09-18 1994-04-15 Matsushita Electric Ind Co Ltd Method of manufacturing thin film transistor
JPH07321329A (en) * 1994-05-27 1995-12-08 Matsushita Electric Ind Co Ltd Method of manufacturing thin film transistor and liquid crystal display device
JPH0974206A (en) * 1995-09-04 1997-03-18 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
US6037195A (en) * 1997-09-25 2000-03-14 Kabushiki Kaisha Toshiba Process of producing thin film transistor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197864A (en) * 1984-10-18 1986-05-16 Asahi Glass Co Ltd thin film transistor
JP2503656B2 (en) * 1989-05-31 1996-06-05 日本電気株式会社 Thin film field effect transistor and method of manufacturing the same
JP3086579B2 (en) * 1993-12-28 2000-09-11 シャープ株式会社 Method for manufacturing thin film transistor
JPH08250739A (en) * 1995-03-13 1996-09-27 Nec Corp Method for manufacturing semiconductor device
JPH08335687A (en) * 1995-06-07 1996-12-17 Fuji Xerox Co Ltd Method for manufacturing thin film photoelectric conversion device
JP2809153B2 (en) * 1995-09-28 1998-10-08 日本電気株式会社 Liquid crystal display device and method of manufacturing the same
GB9626344D0 (en) * 1996-12-19 1997-02-05 Philips Electronics Nv Electronic devices and their manufacture
JPH10223907A (en) * 1997-02-07 1998-08-21 Toshiba Corp Thin film transistor, liquid crystal display device, and manufacturing method thereof
US6617644B1 (en) * 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6909114B1 (en) * 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
DE69940421D1 (en) * 1998-12-25 2009-04-02 Semiconductor Energy Lab Semiconductor devices and their manufacture

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104279A (en) * 1992-09-18 1994-04-15 Matsushita Electric Ind Co Ltd Method of manufacturing thin film transistor
JPH07321329A (en) * 1994-05-27 1995-12-08 Matsushita Electric Ind Co Ltd Method of manufacturing thin film transistor and liquid crystal display device
JPH0974206A (en) * 1995-09-04 1997-03-18 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
US6037195A (en) * 1997-09-25 2000-03-14 Kabushiki Kaisha Toshiba Process of producing thin film transistor

Also Published As

Publication number Publication date
GB2393576A (en) 2004-03-31
GB0408368D0 (en) 2004-05-19
GB2396743A (en) 2004-06-30
GB2393575B (en) 2004-06-02
GB2396744A (en) 2004-06-30
GB0330024D0 (en) 2004-01-28
GB2393574A (en) 2004-03-31
GB0330021D0 (en) 2004-01-28
GB2396743B (en) 2004-08-18
GB0408229D0 (en) 2004-05-19
GB2393575A (en) 2004-03-31
GB2396744B (en) 2004-08-18
GB2393576B (en) 2004-05-19
GB0330022D0 (en) 2004-01-28

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20080309