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GB2352087B - Photon detector - Google Patents

Photon detector

Info

Publication number
GB2352087B
GB2352087B GB0010582A GB0010582A GB2352087B GB 2352087 B GB2352087 B GB 2352087B GB 0010582 A GB0010582 A GB 0010582A GB 0010582 A GB0010582 A GB 0010582A GB 2352087 B GB2352087 B GB 2352087B
Authority
GB
United Kingdom
Prior art keywords
photon detector
photon
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0010582A
Other versions
GB0010582D0 (en
GB2352087A (en
Inventor
Andrew James Shields
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Research Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Research Europe Ltd filed Critical Toshiba Research Europe Ltd
Publication of GB0010582D0 publication Critical patent/GB0010582D0/en
Publication of GB2352087A publication Critical patent/GB2352087A/en
Application granted granted Critical
Publication of GB2352087B publication Critical patent/GB2352087B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
GB0010582A 1999-07-10 2000-05-02 Photon detector Expired - Lifetime GB2352087B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9916182.0A GB9916182D0 (en) 1999-07-10 1999-07-10 Photon detector

Publications (3)

Publication Number Publication Date
GB0010582D0 GB0010582D0 (en) 2000-06-21
GB2352087A GB2352087A (en) 2001-01-17
GB2352087B true GB2352087B (en) 2002-06-26

Family

ID=10857003

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB9916182.0A Ceased GB9916182D0 (en) 1998-09-16 1999-07-10 Photon detector
GB0010582A Expired - Lifetime GB2352087B (en) 1999-07-10 2000-05-02 Photon detector

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB9916182.0A Ceased GB9916182D0 (en) 1998-09-16 1999-07-10 Photon detector

Country Status (1)

Country Link
GB (2) GB9916182D0 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104979420A (en) * 2014-04-02 2015-10-14 中国人民解放军军械工程学院 Quantum dot field effect single-photon detector based on microcavity

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2365210B (en) * 2000-07-28 2003-01-22 Toshiba Res Europ Ltd An optical device and a method of making an optical device
GB2404012B (en) 2003-07-15 2006-07-19 Toshiba Res Europ Ltd A circuit for a single photon detector
DE10335443B4 (en) 2003-07-31 2007-08-02 Humboldt-Universität Zu Berlin Quantum well structure
GB2440569B (en) * 2006-07-31 2008-07-23 Toshiba Res Europ Ltd A photon detector and a method of fabricating a photon detector
GB2469961B (en) * 2007-02-27 2011-05-18 Toshiba Res Europ Ltd A photon detector
GB2495085A (en) 2011-09-26 2013-04-03 Novomatic Ag Gaming devices and methods of operating gaming devices
EP2592547A1 (en) 2011-11-09 2013-05-15 Novomatic AG Device for generating true random numbers and gaming system
US11309450B2 (en) 2018-12-20 2022-04-19 Analog Devices, Inc. Hybrid semiconductor photodetector assembly
US11302835B2 (en) 2019-01-08 2022-04-12 Analog Devices, Inc. Semiconductor photodetector assembly

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2341722A (en) * 1998-09-16 2000-03-22 Toshiba Res Europ Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2341722A (en) * 1998-09-16 2000-03-22 Toshiba Res Europ Ltd Semiconductor device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
App.Phys.Lett., Vol 70, No 3, pp345-47, "Trapping of carrier", G Yusa and H Sakaki *
App.Phys.Lett., Vol 74, No 5, pp735-37, "Optically induced bistability" AJ Shields et al *
Superlattices and Microstructures, Vol 25, No 1/2, Feb 1999,"InAs quantum dots", G Yusa and H Sakaki *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104979420A (en) * 2014-04-02 2015-10-14 中国人民解放军军械工程学院 Quantum dot field effect single-photon detector based on microcavity
CN104979420B (en) * 2014-04-02 2017-11-14 中国人民解放军军械工程学院 A kind of quantum dot field-effect single-photon detector based on microcavity

Also Published As

Publication number Publication date
GB0010582D0 (en) 2000-06-21
GB2352087A (en) 2001-01-17
GB9916182D0 (en) 1999-09-08

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20200501