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GB2332562B - Hybrid semiconductor imaging device - Google Patents

Hybrid semiconductor imaging device

Info

Publication number
GB2332562B
GB2332562B GB9726765A GB9726765A GB2332562B GB 2332562 B GB2332562 B GB 2332562B GB 9726765 A GB9726765 A GB 9726765A GB 9726765 A GB9726765 A GB 9726765A GB 2332562 B GB2332562 B GB 2332562B
Authority
GB
United Kingdom
Prior art keywords
readout
detector
imaging device
substrate
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9726765A
Other versions
GB2332562A9 (en
GB2332562A (en
GB9726765D0 (en
Inventor
Konstantinos Evange Spartiotis
Miltiadis Evangelos Sarakinos
Jouni Ilari Pyyhtia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Simage Oy
Original Assignee
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Publication of GB2332562A9 publication Critical patent/GB2332562A9/en
Priority to GB9726765A priority Critical patent/GB2332562B/en
Application filed by Simage Oy filed Critical Simage Oy
Publication of GB9726765D0 publication Critical patent/GB9726765D0/en
Priority to US09/095,152 priority patent/US6323475B1/en
Priority to EP98963497A priority patent/EP1042814B1/en
Priority to AU18745/99A priority patent/AU1874599A/en
Priority to AT98963497T priority patent/ATE469439T1/en
Priority to PCT/EP1998/007522 priority patent/WO1999033116A1/en
Priority to IL13670498A priority patent/IL136704A/en
Priority to JP2000525930A priority patent/JP4112175B2/en
Priority to DE69841688T priority patent/DE69841688D1/en
Publication of GB2332562A publication Critical patent/GB2332562A/en
Application granted granted Critical
Publication of GB2332562B publication Critical patent/GB2332562B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Photographic Developing Apparatuses (AREA)

Abstract

An imaging device includes one detector substrate with a plurality of readout substrates connected thereto. The detector substrate has a bias contact on a first surface and a number of detector cell contacts on a second surface. The readout substrate includes a plurality of readout circuits. The readout substrates are all mechanically connected to the detector substrate with the readout circuits electrically connected to respective detector cell contacts. To allow for areas of the readout substrates with no readout circuits or gaps between readout circuits, conductive tracks lead from selected detector positions to offset readout circuit position.
GB9726765A 1997-12-18 1997-12-18 Hybrid semiconductor imaging device Expired - Fee Related GB2332562B (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
GB9726765A GB2332562B (en) 1997-12-18 1997-12-18 Hybrid semiconductor imaging device
US09/095,152 US6323475B1 (en) 1997-12-18 1998-06-10 Hybrid semiconductor imaging device having plural readout substrates
EP98963497A EP1042814B1 (en) 1997-12-18 1998-11-16 Hybrid semiconductor imaging device
DE69841688T DE69841688D1 (en) 1997-12-18 1998-11-16 HYBRID SEMICONDUCTOR IMAGE RECORDING DEVICE
AU18745/99A AU1874599A (en) 1997-12-18 1998-11-16 Hybrid semiconductor imaging device
AT98963497T ATE469439T1 (en) 1997-12-18 1998-11-16 HYBRID SEMICONDUCTOR IMAGE RECORDING DEVICE
PCT/EP1998/007522 WO1999033116A1 (en) 1997-12-18 1998-11-16 Hybrid semiconductor imaging device
IL13670498A IL136704A (en) 1997-12-18 1998-11-16 Hybrid semiconductor imaging device
JP2000525930A JP4112175B2 (en) 1997-12-18 1998-11-16 Hybrid semiconductor imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9726765A GB2332562B (en) 1997-12-18 1997-12-18 Hybrid semiconductor imaging device

Publications (4)

Publication Number Publication Date
GB2332562A9 GB2332562A9 (en)
GB9726765D0 GB9726765D0 (en) 1998-02-18
GB2332562A GB2332562A (en) 1999-06-23
GB2332562B true GB2332562B (en) 2000-01-12

Family

ID=10823835

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9726765A Expired - Fee Related GB2332562B (en) 1997-12-18 1997-12-18 Hybrid semiconductor imaging device

Country Status (9)

Country Link
US (1) US6323475B1 (en)
EP (1) EP1042814B1 (en)
JP (1) JP4112175B2 (en)
AT (1) ATE469439T1 (en)
AU (1) AU1874599A (en)
DE (1) DE69841688D1 (en)
GB (1) GB2332562B (en)
IL (1) IL136704A (en)
WO (1) WO1999033116A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19933471A1 (en) * 1999-07-20 2001-02-01 Daimler Chrysler Ag Image acquisition device with integrated signal processing has photosensitive elements on first layer, circuits in second, lower layer, at least one electrical connection between layers per pixel
US7189971B2 (en) * 2002-02-15 2007-03-13 Oy Ajat Ltd Radiation imaging device and system
US7170062B2 (en) * 2002-03-29 2007-01-30 Oy Ajat Ltd. Conductive adhesive bonded semiconductor substrates for radiation imaging devices
US6841784B2 (en) * 2002-07-02 2005-01-11 Ray Therapy Imaging Ab Radiation sensor device
US6844543B2 (en) * 2002-07-03 2005-01-18 The Regents Of The University Of California Quantitation of absorbed or deposited materials on a substrate that measures energy deposition
US7223981B1 (en) * 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
US7247858B2 (en) * 2003-04-10 2007-07-24 Agfa Healthcare, N.V. Method for creating a contiguous image using multiple X-ray imagers
DE10357135B4 (en) * 2003-12-06 2007-01-04 X-Fab Semiconductor Foundries Ag Photodetector with transimpedance amplifier and evaluation electronics in monolithic integration and manufacturing process
US7217915B2 (en) * 2004-05-07 2007-05-15 Sun Microsystems, Inc. Method and apparatus for detecting the position of light which is incident to a semiconductor die
GB2441814B (en) * 2006-09-07 2012-04-11 Detection Technology Oy Photodiode array output signal multiplexing
US20110001052A1 (en) * 2006-12-04 2011-01-06 Luc Struye Computed radiography system
JP2008277511A (en) * 2007-04-27 2008-11-13 Fujifilm Corp Imaging device and imaging apparatus
US8368469B2 (en) * 2010-03-10 2013-02-05 Purdue Research Foundation Silicon-on-insulator high power amplifiers
JP5642166B2 (en) * 2010-05-18 2014-12-17 キヤノン株式会社 Imaging system and control method thereof
JPWO2015125443A1 (en) * 2014-02-19 2017-03-30 パナソニックＩｐマネジメント株式会社 Light receiving device and manufacturing method thereof
US20150276945A1 (en) * 2014-03-25 2015-10-01 Oy Ajat Ltd. Semiconductor bump-bonded x-ray imaging device
US10686003B2 (en) * 2015-12-31 2020-06-16 General Electric Company Radiation detector assembly
EP3534795B1 (en) * 2016-11-04 2021-01-13 Hologic, Inc. Medical imaging device
SE542767C2 (en) * 2018-05-15 2020-07-07 Xcounter Ab Sensor unit and radiation detector
RU2730045C2 (en) * 2018-09-11 2020-08-14 Объединенный Институт Ядерных Исследований (Оияи) Hybrid pixel detector of ionizing radiations
EP3690490A1 (en) * 2019-02-04 2020-08-05 ams International AG X-ray detector component, x-ray detection module, imaging device and method for manufacturing an x-ray detector component
CN113811794B (en) 2019-05-13 2024-04-26 直接转换公司 Method for reading data from radiation detector, radiation detector and imaging device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0415541A1 (en) * 1989-07-29 1991-03-06 Shimadzu Corporation Semiconductor-based radiation image detector and its manufacturing method
US5391881A (en) * 1992-06-30 1995-02-21 Commissariat A L'energie Atomique Ionizing radiation imaging device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2581251B1 (en) * 1985-04-30 1987-09-11 Thomson Csf DEVICE FOR THE OPTICAL FELT OF PHOTOSENSITIVE DETECTORS
FR2652655A1 (en) 1989-10-04 1991-04-05 Commissariat Energie Atomique LARGE DIMENSIONAL MATRIX DEVICE FOR TAKING OR RETRIEVING IMAGES.
US5245191A (en) * 1992-04-14 1993-09-14 The Board Of Regents Of The University Of Arizona Semiconductor sensor for gamma-ray tomographic imaging system
US5336879A (en) 1993-05-28 1994-08-09 David Sarnoff Research Center, Inc. Pixel array having image forming pixel elements integral with peripheral circuit elements
GB2289983B (en) * 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
GB2305096B (en) 1995-08-29 1997-09-10 Simage Oy Imaging system and method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0415541A1 (en) * 1989-07-29 1991-03-06 Shimadzu Corporation Semiconductor-based radiation image detector and its manufacturing method
US5391881A (en) * 1992-06-30 1995-02-21 Commissariat A L'energie Atomique Ionizing radiation imaging device

Also Published As

Publication number Publication date
WO1999033116A1 (en) 1999-07-01
GB2332562A9 (en)
ATE469439T1 (en) 2010-06-15
AU1874599A (en) 1999-07-12
GB2332562A (en) 1999-06-23
DE69841688D1 (en) 2010-07-08
JP2001527294A (en) 2001-12-25
GB9726765D0 (en) 1998-02-18
EP1042814B1 (en) 2010-05-26
JP4112175B2 (en) 2008-07-02
IL136704A0 (en) 2001-06-14
IL136704A (en) 2004-07-25
US6323475B1 (en) 2001-11-27
EP1042814A1 (en) 2000-10-11

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20021218