GB2307339A - Method of manufacturing thermoelectric conversion module - Google Patents
Method of manufacturing thermoelectric conversion module Download PDFInfo
- Publication number
- GB2307339A GB2307339A GB9623559A GB9623559A GB2307339A GB 2307339 A GB2307339 A GB 2307339A GB 9623559 A GB9623559 A GB 9623559A GB 9623559 A GB9623559 A GB 9623559A GB 2307339 A GB2307339 A GB 2307339A
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- GB
- United Kingdom
- Prior art keywords
- thermoelectric conversion
- conversion module
- type semiconductor
- semiconductor elements
- honeycomb structural
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 88
- 239000000945 filler Substances 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 238000005520 cutting process Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 22
- 239000000155 melt Substances 0.000 claims description 4
- 241000264877 Hippospongia communis Species 0.000 description 23
- 210000003660 reticulum Anatomy 0.000 description 23
- 239000000758 substrate Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 5
- 230000005678 Seebeck effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000005679 Peltier effect Effects 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- 229910002909 Bi-Te Inorganic materials 0.000 description 1
- 229910002899 Bi2Te3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- 230000005680 Thomson effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
- H10N19/101—Multiple thermocouples connected in a cascade arrangement
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
A thermoelectric conversion module having a large capacity and a curved surface which can be secured to a corresponding curved surface of a base member is manufactured by inserting N type and P type semiconductor strips 23 into through holes formed in a honeycomb structural body 21, filling spaces between walls defining the through holes and the semiconductor strips with filler members 25, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies each having a desired surface configuration, providing metal electrodes 41 on both surfaces of a thermoelectric conversion module main body such that alternate N type and P type semiconductor elements are connected in cascade, and removing the filler members or the honeycomb structural body 23 and filler members.
Description
11 2307339 8-282,481 METHOD OF MANUFACTURING THERMOELECTRIC CONVERSION
MODULE
Background of the Invention Field of the Invention
The present invention relates to a method of manufacturing a thermoelectric conversion module for us in an apparatus utilizing a thermoelectric effect such as electronic cooling apparatus and electric power generating apparatus, and more particularly to a thermoelectric conversion module having N type semiconductor elements and P type semiconductor element connected in cascade or in series by means of metal electrodes.
is Related Art Statement
There have been proposed various kinds of thermoelectric conversion modules utilizing the Seebeck effect, Peltier effect and Thomson effect. Among these thermoelectric conversion modules, there have been realized a Seebeck effect element and Peltier effect element, in which a thermoelectric element is formed by joining different kinds of metals. In the Seebeck effect element, different kinds of metals are joined to constitute a closed loop, and a thermoelectricity is generated by making junctions at different temperatures. Such a Seebeck effect element may be utilized as thermo- is electricity element. In the Peltier effect element, different kinds of metals are joined to form a closed loop and an electric current is passed through the loop in a given direction to occur a heat absorption at one junction point and a heat generation at the other junction point. Such a thermoelectric element may be utilized as a thermoelectric heating element or thermoelectric cooling,element. In order to improve an efficiency of these elements, a junction between a semiconductor and a metal has been widely used.
Fig. 1 is a schematic view showing a principal structural of a known thermoelectric conversion-module constructed as the above mentioned thermoelectricity element. The thermoelectric conversion module comprises a number of N type semiconductor elements 1 and a number of P type semiconductor elements 2, said N and P type semiconductor elements being arranged alternately. Adjacent N type and P type semiconductor elements 1 and 2 are connected in cascade or in series by means of electrodes 3 made by metal strips. The left side N type semiconductor element 1 and the right side P type semiconductor element 2 of the cascade connection semiconductor element array are connected to opposite ends of a load 4. One side of the semiconductor array is placed in a higher temperature environment and the other side is placed in a lower temperature environment.
Then, in each of the N type semiconductor elements 1, electrons flow from the high temperature side to the low temperature side as shown by solid lines (an electric current flows from the low temperature side to the high temperature side). In each of the P type semiconductor elements 2, holes flow from the high temperature side to the low temperature side as depicted by broken lines (an electric current flows from the high temperature side to the low temperature side). Therefore, a voltage is applied across the load 4 with a polarity described on Fig. 1. The semiconductor elements 1 and 2 may be made of Bi-Te semiconductor (for instance Bi2Te3), Bi-Sb semiconductor (for example Bio.88Sbo.12) or Si-Ge (for instance Sio.8Geo.2).
Fig. 2 is a perspective view showing a known method of manufacturing the above mentioned known thermoelectric conversion module. On a surface of an insulating substrate 5 are secured electrode metal strips 6 by brazing in accordance with a given pattern. Then, N type semiconductor elements 1 and P type semiconductor elements 2 are secured to the metal strips 6 by brazing or soldering. The semiconductor elements 1 and 2 may be formed by cutting a single crystal melting method or a sintered semiconductor material. On upper surfaces of the N type and P type semiconductor elements 1 and 2 there are secured metal strips 7 by means of brazing or soldering. in this manner, the N type semiconductor elements 1 and P type semiconductor elements 2 are arranged alternately and are connected in cascade by means of the metal strips 6 and 7. In this case, it has been proposed to secure the metal strips 7 simultaneously to the semiconductor elements 1 and 2 by using an insulating plate on which a metal electrode pattern is previously formed.
When a large capacity thermoelectric conversion module including a large number of thermoelectric elements is to be manufactured by the known method shown in Figs. 2, extremely high working precision and high assembling faculty are required, and thus a manufacturing cost will be increased very much. Moreover, it is impossible to manufacture a thermoelectric conversion module having a curved surface. Such a curved surface is required when a thermoelectric conversion module is secured to a base member having a curved surface. In this manner, the module made by this known method could not be used in various applications. For instance, when the thermoelectric conversion module is applied to a system in which an electric power is generated by using a wasted heat of an internal combustion engine, a space for providing the thermoelectric conversion module is limited and in many cases it is desired to provide the thermoelectric conversion module on a curved surface. However, the module made by the above mentioned known method could not have a curved surface, and therefore could not be applied to-such a thermoelectric power system.
In Japanese Patent Publications Nos. 58-199578 (JP 58-199578), 61-263176 (JP 61-263176), 5-283753 (JP 5-283753), 7-162039 (JP 7-162039) and 8-18109 (JP 8-18109), there are disclosed various known methods of manufacturing thermoelectric conversion modules.
In JP 58199578, after N type semiconductor elements and P type semiconductor elements are arranged alternately, spaces between adjacent semiconductor elements are filled with an adhesive agent. In JP 61-263176, there is described a method, in which an N type semiconductor layer and a P type semiconductor layer are successively deposited one on the other, spaces other than contact regions of these layers are filled with a glassy material. In a method disclosed in JP 5-283753, N type semiconductor elements and P type semiconductor elements are alternately arranged in a porous heat resisting insulating member. Further, in JP 7-162039, there is described a method, in which a single array of through holes are formed in a mold body and N type semiconductor elements and P type semiconductor elements are alternately inserted in these through holes. Finally, in JP 8-18109, there is disclosed a thermoelectric element having N type and P type semiconductor elements and an insulating material such as synthetic resin, ceramics and glass filling spaces between adjacent semiconductor elements. Such a thermoelectric element is formed by depositing an N type semiconductor layer on a glass substrate, depositing a P type semiconductor layer on a glass substrate, cutting these glass substrates and.semiconductor layers by a dicing machine to obtain members in which pillar-like N type and P type semiconductor elements are aligned, assembling these members such that the N type.semiconductor elements and P type semiconductor elements are arranged alternately, and filling spaces between these semiconductor elements with an insulating material.
In the known method described in JP 58-199578, is the arrangement of the N type and P type semiconductor elements requires very complicated work, high working precision and high assembling faculty, and thus a manufacturing cost becomes very high. In the known method described in JP 61-263176, due to a difference in a thermal expansion coefficient between the semiconductor material and the glassy material, the thermoelectric conversion module is subjected to damage through a heat cycle and has a short life time. In the known methods disclosed in JP 5-0283753 and 7-162039, the insertion of the N type and P type semiconductor elements into the holes of the insulating substrate requires high working is precision and faculty, so that the manufacturing cost becomes very high. Furthermore, the thermoelectric conversion module might be damaged through a heat cycle due to a difference in thermal expansion coefficient.
In the known method proposed in JP 8-18109, the array of semiconductor elements is formed by the dicing machine, it is very difficult to manufacture a thermoelectric conversion module having a small size. Therefore, a capacity of the thermoelectric conversion module is limited. Further, due to a difference in thermal expansion coefficient between the semiconductor elements and the insulating material, the thermoelectric conversion module might be damaged and its durability is also limited.
Furthermore, in known thermoelectric conversion module manufactured by known methods using the insulating substrate and/or insulating filler material, there is a drawback that these materials might be eluted or burned during a usage and surrounding substances are contaminated thereby. Particularly, the semiconductor elements which situate in the vicinity of the substrate and filler material might be contaminated, and thus the property of the semiconductor elements might be deteriorated and a thermoelectric conversion efficiency might be decreased.
Summary of the Invention
The present invention has for its object to provide a useful and novel method of manufacturing a thermoelectric conversion module, which may have a large capacity and/or a curved surface, and reduces risk of contaminating surrounding substances, in an accurate, simple and less expensive manner.
According to the invention, a method of manufacturing a thermoelectric conversion module comprises the steps of: preparing a honeycomb structural body having a first surface, a second surface opposite to said first surface, and a plurality of channels which extend from said first surface to said second surface, alternate one or more of said channels being classified into a first group and the remaining channels being classified into a second group; inserting N type and P type semiconductor strips into the channels belonging to the first and second groups, respectively; filling spaces formed between walls defining the channels and the semiconductor elements inserted therein with filler material or members; cutting said honeycomb structural body into a plurality of thermoelectric conversion module main bodies of a desired shape, each of which has N type and P type semiconductor elements provided within said channels and exposed at mutually opposite first and. second surfaces; forming metal electrodes on opposite surfaces of said thermoelectric conversion module main body such that adjacent one or more N type semiconductor elements and one or more P type semiconductor elements are connected in cascade by means of said metal electrodes; and removing said filler material or members or said honey- comb structural body and said filler material or members.
In the method according to the invention, after inserting the semiconductor strips into the channels of the honeycomb structural body and positioning these semiconductor strips by means of the filler members, the honeycomb structural body is cut into a plurality of honeycomb structural main bodies. Therefore, a required precision for the honeycomb structural body and semiconductor strips is reduced, and a yield of the honeycomb conversion module main body is improved. In this manner, it is possible to manufacture the thermoelectric conversion module having large capacity and curved surface in an accurate, easy and less expensive manner. Moreover, since the filler members or the honeycomb structural body and filler members are removed after cutting, undesired contamination of surrounding substances due to the fusion and burning of these materials can be effectively prevented. Furthermore, these materials can be easily selected from a wide group, and thus a manufacturing cost can be decreased. Brief Description of the Drawings
Fig. 1 is a schematic view showing a known thermoelectric conversion module; Fig. 2 is a perspective view illustrating a known method of manufacturing the thermoelectric conversion module; Figs. M-3F are views showing successive steps of an embodiment of the method according to the invention; and Figs. 4A-45C are successive steps of another embodiment of the method of manufacturing the thermoelectric conversion module according to the invention.
Description of the Preferred Embodiments
Figs. M-3F show successive steps of an embodiment of the method of manufacturing the thermoelectric conversion module according to the invention.
At first, as illustrated in Fig. 3A, an electrically insulating honeycomb structural body 21 having a large number of channels 22 formed therein is prepared. In the present embodiment, the channels 22 are formed in the shape of square through holes each having a cross sectional area of 25 MM2 (one side is 5 mm). This honeycomb structural body 21 is made of cordierite (M92Al(A15i5)018) and has a height of 10 cm. In the present embodiment, a lateral cross section of a through hole 22 has a square shape, but according to the invention, the through hole may have any arbitrary cross sectional shape such as circular, triangular, rectangular and hexagonal. In Fig. 3A, the through hole 22 is drawn to have a large dimension in comparison with the honeycomb structural body 21 for the sake of clarity, so that the number of through holes are shown to be small, but in an actual module, a very large number of through holes 22 each having a very small cross section are formed.
Next, as illustrated in Fig. 3B, N type semiconductor strips 23 and P type semiconductor strips 24 are inserted into alternate through holes 22. In the present embodiment, the N type semiconductor strip 23 is made of Sio.8Geo.2 containing phosphorus (P) by 0.2 weight % as N type dopant, and P type semiconductor strip 24 is made of Sio.8Geo.2 containing boron (B) by 0.05 weight % as P type dopant. In the present embodiment, the semiconductor strips 23 and 24 have a circular cross section having a diameter of 4 mm and a length of not less than 10 cm. According to the invention, the semiconductor strips may have any desired cross sectional shape such as square, triangular, and rectangular shapes. It should be noted that the N type and P type semiconductor strips 23 and 24 may be inserted into successive through holes 22 alternately or the N type semiconductor strips may be inserted into every other through holes one by one or simultaneously and then the P type semiconductor strips may be inserted into the remaining through holes one by one or simultaneously.
Next, as illustrated in Fig. 3C, spaces between the walls defining the through holes 22 and the semiconductor strips 23, 24 are filled with a filler members 25. This may be conducted by immersing the honeycomb structural body 21 having the semiconductor strips 23, 24 inserted therein into a melt of a filler material. Alternatively, a lower end of the honeycomb structural body 21 may be inserted into a melt of the filer material to suck the molten material into the spaces between the walls and the semiconductor strips 23, 24 by an action of the capillary phenomenon.
Then, after drying the filler material melt to form the electrically insulating filler members 25 within the through holes 22, the honeycomb structural body 21 is cut along a plane L which is perpendicular to the through holes 22 as shown in Fig. 3D into a plurality of thermoelectric conversion module main bodies 26 each having a thickness of, for instance 5 mm. By this cutting process, the N type and P type semiconductor strips 23 and 24 are also cut to constitute N type and P type semiconductor elements 27 and 28 in each of the thermoelectric conversion module main body. Next, as shown in Fig. 3E, on upper and lower surfaces of a thermoelectric conversion module main body 26 are provided metal electrodes 41 and 42 such that the N type semiconductor elements 27 and P type semiconductor elements 28 are alternately connected in series by means of the electrodes 41 and 42.
Finally as depicted in Fig. 3F, all the filler members 25 are removed to form a final thermoelectric conversion module. For instance, the filler members 25 is may be made of a synthetic resin. Then, the filler members 25 can be simply removed by immersing the assembly illustrated in Fig. 3E into an etchant which can elute the synthetic resin.
In the present embodiment, since the filler members 25 are removed in the final thermoelectric conversion module, surrounding substances are free from contamination due to melting and burning of the filler member material.
Figs. 4A-4C show successive steps of another embodiment of the method according to the invention. In the previously explained embodiment, only the filler members 25 are removed, but in the present embodiment, both the filler members and honeycomb structural body are removed. Fig. 4A depicts the thermoelectric conversion module main body 26 which is formed by the same process as the previous embodiment. Next, as illustrated in Fig. 4B, adjacent N type and P type semiconductor elements 27 and 28 are connected by means of metal strip electrodes 41 and 42 in upper and lower surfaces of the thermoelectric conversion module main body 26. In this manner, all the N type and P type semiconductor elements 27 and 28 are alternately connected in cascade. Then, the whole assembly is immersed into an etchant which can etch both the honeycomb structural body 21 and filler members 25.
In this manner, the honeycomb structural body 21 and filler members 25 are completely removed to obtain a final thermoelectric conversion module shown in Fig. 4C.
In the present embodiment, since both the honeycomb structural body 21 and filler members 25 are removed, they can be made of any kinds of materials which can be removed easily. Further, it is no more necessary to make the honeycomb structural body 21 of an electrically insulating material, it may be made of a cheap material such as resin and pulp.
When a mechanical strength of the thermoelectric conversion modules manufactured by the method according to the invention is smaller than a required value, one or both surfaces of the thermoelectric conversion modu may be covered with a reinforcing plate made of an electrically insulating material.
Furthermore, in the above embodiment, both the upper and lower surfaces of the thermoelectric conversion module are formed to be flat. According to the invention, one or both surfaces of the thermoelectric conversion module may be curved. In this case, a surface configuration of the upper surface of the thermoelectric conversion member may be different from that of the lower surface.
As explained above in detail, according to the invention, after inserting the semiconductor strips into the through holes formed in the honeycomb structural body and filling the spaces between the semiconductor strips and the walls defining the through holes with the filler members to hold the semiconductor strips in position within the through holes, the honeycomb structural body is cut into the thermoelectric conversion module main bodies. Therefore, it is possible to form easily the thermoelectric conversion module main body having a large capacity and a desired surface configuration in an easy, accurate and less expensive manner. Moreover, after providing the electrodes, the filler members or the honeycomb structural body are removed, le and thus surrounding substances are not contaminated by these materials during a usage. Furthermore, these materials can be easily selected from a wide group, a manufacturing cost can be reduced.
is
Claims (7)
1. A method of manufacturing a thermoelectric conversion module comprising the steps of:
preparing a honeycomb structural body having a first surface, a second surface opposing to said first surface, and a plurality of channels which extend from said first surface to said second surface, alternate one or more of said channels being classified into a first group and the remaining channels being classified into a second group; inserting N type and P type semiconductor strips into the,channels belonging to the first and second groups, respectively; filling spaces formed between walls defining the channels and the semiconductor elements inserted therein with filler members; cutting said honeycomb structural body into a plurality of thermoelectric conversion module main bodies of a desired shape, each of which has N type and P type semiconductor elements provided within said channels are exposed at mutually opposing first and second surfaces; forming metal electrodes on opposite surfaces of said thermoelectric conversion module main body such that adjacent one or more N type semiconductor elements and one or more P type semiconductor elements are connected in cascade by means of said metal electrodes; and removing said filler members or said honeycomb structural body and filler members.
2. A method according to claim 1, wherein said filling step is carried out by immersing the honeycomb structural body having the semiconductor strips inserted therein into a melt of a material of the filler members.
3. A method according to claim 1, wherein said filling step is carried out by sucking, under an action of a capillary phenomenon, a melt of a material of the filler members into the spaces formed between the walls of the honeycomb structural body and the semiconductor elements.
4. A method according to claim 1, wherein said removing step is carried out by immersing the thermoelectric conversion module main body into an etchant which can etch the filler members.
5. A method according to claim 1, wherein said cutting step is performed such that at least one of surfaces of the thermoelectric conversion module main body is shaped into a curved configuration.
6. A method of manufacturing a thermoelectric conversion module, substantially as herein described with reference to Fig. 3 or Fig. 4 of the accompanying drawings.
7. A thermoelectric conversion module made by a method according to any one of the preceding claims.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29434995 | 1995-11-13 | ||
| JP8282481A JPH09199766A (en) | 1995-11-13 | 1996-10-24 | Manufacture of thermoelectric conversion module |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9623559D0 GB9623559D0 (en) | 1997-01-08 |
| GB2307339A true GB2307339A (en) | 1997-05-21 |
| GB2307339B GB2307339B (en) | 1998-02-04 |
Family
ID=26554622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9623559A Expired - Fee Related GB2307339B (en) | 1995-11-13 | 1996-11-12 | Method of manufacturing thermoelectric conversion module |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5705434A (en) |
| JP (1) | JPH09199766A (en) |
| DE (1) | DE19646905C2 (en) |
| FR (1) | FR2741197B1 (en) |
| GB (1) | GB2307339B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09139526A (en) * | 1995-11-13 | 1997-05-27 | Ngk Insulators Ltd | Thermoelectric conversion module and its manufacture |
| JP3528471B2 (en) * | 1996-02-26 | 2004-05-17 | 松下電工株式会社 | Manufacturing method of thermoelectric module |
| WO1997045882A1 (en) * | 1996-05-28 | 1997-12-04 | Matsushita Electric Works, Ltd. | Method for manufacturing thermoelectric module |
| JP3982080B2 (en) * | 1997-12-05 | 2007-09-26 | 松下電工株式会社 | Thermoelectric module manufacturing method and thermoelectric module |
| JPH10321921A (en) * | 1997-05-22 | 1998-12-04 | Ngk Insulators Ltd | Thermoelectric conversion module and its manufacture |
| KR100320761B1 (en) * | 1997-08-25 | 2002-01-18 | 하루타 히로시 | Thermoelectric device |
| US6100463A (en) * | 1997-11-18 | 2000-08-08 | The Boeing Company | Method for making advanced thermoelectric devices |
| FR2776364B1 (en) * | 1998-03-17 | 2000-05-12 | Marty Electronique | POWER SUPPLY DEVICE FOR CRYOGENIC LEVEL INDICATOR |
| JP2000236117A (en) * | 1999-02-16 | 2000-08-29 | Ngk Insulators Ltd | Electrical element |
| CN100379045C (en) * | 2004-01-18 | 2008-04-02 | 财团法人工业技术研究院 | Structure and manufacturing method of miniature thermoelectric cooling device |
| US7310953B2 (en) * | 2005-11-09 | 2007-12-25 | Emerson Climate Technologies, Inc. | Refrigeration system including thermoelectric module |
| US20070101737A1 (en) * | 2005-11-09 | 2007-05-10 | Masao Akei | Refrigeration system including thermoelectric heat recovery and actuation |
| DE102006055120B4 (en) * | 2006-11-21 | 2015-10-01 | Evonik Degussa Gmbh | Thermoelectric elements, process for their preparation and their use |
| JP2009099686A (en) * | 2007-10-15 | 2009-05-07 | Sumitomo Chemical Co Ltd | Thermoelectric conversion module |
| JP5225056B2 (en) * | 2008-01-29 | 2013-07-03 | 京セラ株式会社 | Thermoelectric module |
| KR101062129B1 (en) * | 2009-02-05 | 2011-09-02 | 주식회사 엘지화학 | Thermoelectric Modules and Thermoelectric Device Manufacturing Methods |
| FR2959875B1 (en) * | 2010-05-05 | 2012-05-18 | Commissariat Energie Atomique | MODULAR THERMOELECTRIC DEVICE. |
| ES2704132T3 (en) | 2016-01-21 | 2019-03-14 | Evonik Degussa Gmbh | Rational procedure for the powder metallurgical production of thermoelectric components |
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| GB2120455A (en) * | 1982-04-29 | 1983-11-30 | Ecd Anr Energy Conversion Co | Manufacturing thermoelectric devices |
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| JPH05283753A (en) * | 1992-04-03 | 1993-10-29 | Tokin Corp | Temperature controller |
| DE4326662A1 (en) * | 1993-08-09 | 1995-02-23 | Rost Manfred Dr Rer Nat Habil | Flexible Peltier batteries |
| JPH07162039A (en) * | 1993-12-10 | 1995-06-23 | Sharp Corp | Thermoelectric conversion device, heat exchange element, and device using them |
| JPH0818109A (en) * | 1994-06-24 | 1996-01-19 | Seiko Instr Inc | Thermoionic element and manufacture thereof |
-
1996
- 1996-10-24 JP JP8282481A patent/JPH09199766A/en not_active Withdrawn
- 1996-11-07 US US08/744,599 patent/US5705434A/en not_active Expired - Fee Related
- 1996-11-12 GB GB9623559A patent/GB2307339B/en not_active Expired - Fee Related
- 1996-11-12 FR FR9613764A patent/FR2741197B1/en not_active Expired - Fee Related
- 1996-11-13 DE DE19646905A patent/DE19646905C2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2120455A (en) * | 1982-04-29 | 1983-11-30 | Ecd Anr Energy Conversion Co | Manufacturing thermoelectric devices |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19646905C2 (en) | 2003-01-30 |
| US5705434A (en) | 1998-01-06 |
| FR2741197A1 (en) | 1997-05-16 |
| GB2307339B (en) | 1998-02-04 |
| DE19646905A1 (en) | 1997-05-15 |
| FR2741197B1 (en) | 2000-01-28 |
| JPH09199766A (en) | 1997-07-31 |
| GB9623559D0 (en) | 1997-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |