GB2291982A - Photo masks - Google Patents
Photo masks Download PDFInfo
- Publication number
- GB2291982A GB2291982A GB9515230A GB9515230A GB2291982A GB 2291982 A GB2291982 A GB 2291982A GB 9515230 A GB9515230 A GB 9515230A GB 9515230 A GB9515230 A GB 9515230A GB 2291982 A GB2291982 A GB 2291982A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pattern
- width
- chrome
- manufacturing
- photo mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- H10P76/00—
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
A photo mask used for manufacturing a semiconductor device which can form a photoresist pattern (4) of the same width as the chrome pattern (1) of the photo mask has dummy patterns (2) of a certain width (C) chrome spaced a certain distance (B) from both sides of an isolated region of the chrome pattern, which prevents variation in width of the photoresist pattern formed on a wafer caused by the proximity effect caused by a difference in light amount at the time of exposure. Preferably the distance (B) is 0.3 to 0.8 microns and the width (C) is 0.05 to 0.2 microns. <IMAGE>
Description
METHOD OF MANUFACTU ING A PHOTO MASK FOR MANUFACTURING A SEMICONDUCTOR
DEVICE
BACKGROUND OF INVENTION Field of the Invention
The present invention relates to a method of manufacturing a photo mask for manufacturing a semiconductor device, and particularly, to a method of manufacturing a photo mask for manufacturing a semiconductor device which can form a photoresist pattern of a uniform pattern width by minimizing the proximity effect caused by a difference in amount of light at the time of exposure by forming a dummy pattern of a predetermined width in the same direction as a chrome pattern a certain distance from both sides of an isolation region of the chrome pattern.
2291982 Information Disclosure Statement
In general, a photo lithography process and an etching process are performed for patterning a predetermined layer in a process of manufacturing a semiconductor device. The photo lithography process consists of processes of coating a photoresist, exposing by utilizing a predetermined photomask, and thereafter developing. At the time of the exposure process, the proximity effect, ie., pattern width variation, is generated in an isolation region of the pattern due to the difference in the amount of exposing light between a dense region and an isolation region of the pattern. An explanation of a conventional method of manufacturing a photo mask for manufacturing a semiconductor 1 device is given below with reference to FIG. 1A and 1C.
In a conventional method of manufacturing a photo mask for manufacturing a semiconductor device, as shown in FIG. 1A, a chrome pattern 1 of a pattern width of, for example, "All is formed by coating a photoresist(not shown) on a quartz substrate 5 on which chrome is coated and by patterning the chrome using a predetermined mask. A photo mask 10 manufactured as described above is placed on a wafer coated with a photoresist. An exposure process is conducted and development is carried out, whereby a photoresist pattern 3 is formed on a wafer 20 as shown in FIG. 1B. The width of the photoresist pattern 3 of a densed region is formed to be the same as the width "All of the chrome pattern 1 of the photomask 10; however, the photoresist pattern 3 of an isolation region such as 11X11 portion is damaged on both its sides decreasing its width to "AA11.
This is due to the proximity effect caused by the difference in the amount of exposing light at the time of exposure; and as the degree of integration of the semiconductor device is increased, the variation in pattern width is further aggravated, thereby significantly decreasing the stability of the process and the resulting yields of the device.
SUMMARY OF THE INVENTION
Therefore, the object of the present invention is to provide a method of manufacturing a photo mask for manufacturing a semiconductor device which can eliminate the problems described above by forming a dummy pattern of a certain width in the same direction as the chrome pattern spaced a certain distance from 2 direction as the chrome pattern spaced a certain distance from both sides of the isolation region of the chrome pattern.
The present invention to achieve the above described object is characterized in that a dummy pattern is formed maintaining a certain spacing from both sides of an isolation region of a chrome pattern to prevent variation of pattern width of a photoresist pattern to be formed on a wafer.
BRIEF DESCRIPTION OF THE DRAWINGS
To better understand the nature and objective of the invention, reference should be made to the following detailed descriptions of the accompanying drawings in which:
FIG. 1A is a plan view of a conventional photo mask; FIG. IB is a plan view of a photoresist pattern formed by utilizing the photo mask of FIG. 1A; FIG. 2A is a plan view of a photo mask manufactured according to the present invention; and FIG. 2B is a plan view of a photoresist pattern formed by utilizing the photo mask of FIG. 2A.
Similar reference characters refer to similar parts through the several views of the drawings.
DETAILED DESCRIPTION OF THE INVENTION
A method of manufacturing a photo mask for manufacturing a ser-,.'=onductor device according to the present invention is deszribed below with reference to FIG. 2A and 2B.
In a method of manufacturing a photo mask for manufacturing a semiconductor device according to the present invention, as 3 shown in FIG. 2A, a chrome pattern 1 of a pattern width of, for example, "All is formed by coating a photoresist (not shown) On a quartz substrate 5 coated with chrome and by patterning the chrome by utilizing a mask. In addition, a dummy pattern 2 of a width of "C" is formed in the same direction as the chrome pattern 1 at a portion spaced a distance of "B" from both sides of the isolated region of the chrome pattern 1. Thereafter, a photo mask 10A manufactured as described above is placed on a wafer coated with the photoresist. An exposure process is conducted and the photoresist is developed, whereby the photoresist pattern is formed on the wafer 20A as shown in FIG. 2B. At this time, the width of "Cl, of the dummy pattern 2 is f ormed to a width of 0. 05 to 0. 2pm, and the distance is about 0. 3 to 0.8gm, for example.
As described above, the present invention is useful to form a pattern such as gate electrode since it can form a photoresist pattern of the same width as the chrome pattern of the photo mask by minimizing the proximity effect caused by different amounts of light at the time of exposure and thereby improves yields of the device by minimizing the occurrence of poor pattern.
4
Claims (4)
1. A method of manufacturing a photo mask for manufacturing a semiconductor device, wherein a dummy pattern is formed maintaining a certain distance spacing from both sides of an isolation region of a chrome pattern to prevent variation of pattern width of a photoresist film pattern to be formed on a wafer.
2. The method of Claim 1, wherein said dummy pattern is formed to be spaced by 0.3 to 0.8pm from said isolation region of said chrome pattern.
3. The method of Claim 1, wherein said dummy pattern and said isolation region are formed to remain to be parallel to each other.
4. The method of Claim 1 or 2, wherein said dummy pattern 2 has a width of 0.05 to 0.2gm.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940018408A KR960005756A (en) | 1994-07-28 | 1994-07-28 | Photomask Manufacturing Method for Semiconductor Device Manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9515230D0 GB9515230D0 (en) | 1995-09-20 |
| GB2291982A true GB2291982A (en) | 1996-02-07 |
Family
ID=19389111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9515230A Withdrawn GB2291982A (en) | 1994-07-28 | 1995-07-25 | Photo masks |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR960005756A (en) |
| CN (1) | CN1123420A (en) |
| DE (1) | DE19527683A1 (en) |
| GB (1) | GB2291982A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0903635A3 (en) * | 1997-09-17 | 2000-04-05 | Nec Corporation | Light exposure pattern mask and production method of the same |
| EP0968458A4 (en) * | 1997-02-28 | 2001-05-02 | Asm Lithography Holding N V | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000045422A (en) * | 1998-12-30 | 2000-07-15 | 김영환 | Method for forming fine pattern of semiconductor device |
| US6436585B1 (en) * | 2000-02-25 | 2002-08-20 | International Business Machines Corporation | Method of using optical proximity effects to create electrically blown fuses with sub-critical dimension neck downs |
| JP2001312045A (en) * | 2000-05-02 | 2001-11-09 | Sharp Corp | Method of forming mask |
| JP3425414B2 (en) * | 2000-08-30 | 2003-07-14 | 株式会社東芝 | Manufacturing method of mask |
| US20040058550A1 (en) * | 2002-09-19 | 2004-03-25 | Infineon Technologies North America Corp. | Dummy patterns for reducing proximity effects and method of using same |
| CN1299164C (en) * | 2003-04-08 | 2007-02-07 | 旺宏电子股份有限公司 | Method for Eliminating Deviation of Critical Dimensions Between Dense Patterns and Single Patterns |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4415262A (en) * | 1981-01-21 | 1983-11-15 | Hitachi, Ltd. | Photomask |
| GB2273578A (en) * | 1992-12-15 | 1994-06-22 | Mitsubishi Electric Corp | Method for producing field effect transistor and pattern transfer mask therefor |
-
1994
- 1994-07-28 KR KR1019940018408A patent/KR960005756A/en not_active Ceased
-
1995
- 1995-07-25 GB GB9515230A patent/GB2291982A/en not_active Withdrawn
- 1995-07-28 DE DE19527683A patent/DE19527683A1/en not_active Withdrawn
- 1995-07-28 CN CN95115216A patent/CN1123420A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4415262A (en) * | 1981-01-21 | 1983-11-15 | Hitachi, Ltd. | Photomask |
| GB2273578A (en) * | 1992-12-15 | 1994-06-22 | Mitsubishi Electric Corp | Method for producing field effect transistor and pattern transfer mask therefor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0968458A4 (en) * | 1997-02-28 | 2001-05-02 | Asm Lithography Holding N V | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars |
| EP0903635A3 (en) * | 1997-09-17 | 2000-04-05 | Nec Corporation | Light exposure pattern mask and production method of the same |
| US6197452B1 (en) | 1997-09-17 | 2001-03-06 | Nec Corporation | Light exposure pattern mask with dummy patterns and production method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960005756A (en) | 1996-02-23 |
| CN1123420A (en) | 1996-05-29 |
| GB9515230D0 (en) | 1995-09-20 |
| DE19527683A1 (en) | 1996-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |