GB2284929B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number: GB2284929B
Authority: GB; United Kingdom
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1993-12-14
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

GB9405740A

Other versions

GB2284929A (en

GB9405740D0 (en

Inventor

Nalin Kumar Patel

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Europe Ltd

Original Assignee

Toshiba Cambridge Research Centre Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-12-14

Filing date

1994-03-23

Publication date

1997-12-17

1994-03-23 Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd

1994-05-11 Publication of GB9405740D0 publication Critical patent/GB9405740D0/en

1995-06-21 Publication of GB2284929A publication Critical patent/GB2284929A/en

1997-12-17 Application granted granted Critical

1997-12-17 Publication of GB2284929B publication Critical patent/GB2284929B/en

2014-03-23 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/204—Velocity modulation transistors [VMT]

GB9405740A 1993-12-14 1994-03-23 Semiconductor device Expired - Fee Related GB2284929B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB939325526A GB9325526D0 (en)	1993-12-14	1993-12-14	Semiconductor drive

Publications (3)

Publication Number	Publication Date
GB9405740D0 GB9405740D0 (en)	1994-05-11
GB2284929A GB2284929A (en)	1995-06-21
GB2284929B true GB2284929B (en)	1997-12-17

Family

ID=10746549

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
GB939325526A Pending GB9325526D0 (en)	1993-12-14	1993-12-14	Semiconductor drive
GB9405740A Expired - Fee Related GB2284929B (en)	1993-12-14	1994-03-23	Semiconductor device

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
GB939325526A Pending GB9325526D0 (en)	1993-12-14	1993-12-14	Semiconductor drive

Country Status (1)

Country	Link
GB (2)	GB9325526D0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2303963B (en) *	1995-07-31	1997-08-06	Toshiba Cambridge Res Center	Semiconductor device
US8541773B2 (en) *	2011-05-02	2013-09-24	Intel Corporation	Vertical tunneling negative differential resistance devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0214047A2 (en) *	1985-08-20	1987-03-11	Fujitsu Limited	Field effect transistor
EP0262610A2 (en) *	1986-09-29	1988-04-06	Siemens Aktiengesellschaft	Two-dimensional electron gas switching device
US4806998A (en) *	1986-06-30	1989-02-21	Thomson-Csf	Heterojunction and dual channel semiconductor field effect transistor or negative transconductive device

1993
- 1993-12-14 GB GB939325526A patent/GB9325526D0/en active Pending
1994
- 1994-03-23 GB GB9405740A patent/GB2284929B/en not_active Expired - Fee Related

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0214047A2 (en) *	1985-08-20	1987-03-11	Fujitsu Limited	Field effect transistor
US4806998A (en) *	1986-06-30	1989-02-21	Thomson-Csf	Heterojunction and dual channel semiconductor field effect transistor or negative transconductive device
EP0262610A2 (en) *	1986-09-29	1988-04-06	Siemens Aktiengesellschaft	Two-dimensional electron gas switching device

Also Published As

Publication number	Publication date
GB2284929A (en)	1995-06-21
GB9405740D0 (en)	1994-05-11
GB9325526D0 (en)	1994-02-16

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Legal Events

Date	Code	Title	Description
2012-11-28	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20120323