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GB2270326B - Preparation of diamond films on silicon substrates - Google Patents

Preparation of diamond films on silicon substrates

Info

Publication number
GB2270326B
GB2270326B GB9317830A GB9317830A GB2270326B GB 2270326 B GB2270326 B GB 2270326B GB 9317830 A GB9317830 A GB 9317830A GB 9317830 A GB9317830 A GB 9317830A GB 2270326 B GB2270326 B GB 2270326B
Authority
GB
United Kingdom
Prior art keywords
preparation
silicon substrates
diamond films
diamond
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9317830A
Other versions
GB2270326A (en
GB9317830D0 (en
Inventor
Paul Southworth
David Stephen Buhaenko
Peter John Ellis
Carolyn Elizabeth Jenkins
Brian Rhys Stoner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Europe Ltd
Original Assignee
Kobe Steel Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB929218677A external-priority patent/GB9218677D0/en
Priority claimed from GB939304749A external-priority patent/GB9304749D0/en
Application filed by Kobe Steel Europe Ltd filed Critical Kobe Steel Europe Ltd
Priority to GB9317830A priority Critical patent/GB2270326B/en
Publication of GB9317830D0 publication Critical patent/GB9317830D0/en
Publication of GB2270326A publication Critical patent/GB2270326A/en
Application granted granted Critical
Publication of GB2270326B publication Critical patent/GB2270326B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB9317830A 1992-09-03 1993-08-27 Preparation of diamond films on silicon substrates Expired - Fee Related GB2270326B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9317830A GB2270326B (en) 1992-09-03 1993-08-27 Preparation of diamond films on silicon substrates

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB929218677A GB9218677D0 (en) 1992-09-03 1992-09-03 Growth of diamond films on silicon substrates
GB939304749A GB9304749D0 (en) 1993-03-09 1993-03-09 Preparation of diamond films on silicon substrates
GB9317830A GB2270326B (en) 1992-09-03 1993-08-27 Preparation of diamond films on silicon substrates

Publications (3)

Publication Number Publication Date
GB9317830D0 GB9317830D0 (en) 1993-10-13
GB2270326A GB2270326A (en) 1994-03-09
GB2270326B true GB2270326B (en) 1996-10-09

Family

ID=27266348

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9317830A Expired - Fee Related GB2270326B (en) 1992-09-03 1993-08-27 Preparation of diamond films on silicon substrates

Country Status (1)

Country Link
GB (1) GB2270326B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9309346D0 (en) * 1993-05-06 1993-06-16 Kobe Steel Europ Ltd Preparation of nucleated silicon surfaces
GB2300425A (en) * 1995-05-01 1996-11-06 Kobe Steel Europ Ltd Nucleation of diamond films using an electrode
GB2312439A (en) * 1996-04-24 1997-10-29 Northern Telecom Ltd Plasma enhanced chemical vapour deposition of a layer
CN104947068A (en) * 2015-06-10 2015-09-30 哈尔滨工业大学 Preparation method of diamond heat sink piece
CN109666923A (en) * 2019-02-28 2019-04-23 无锡职业技术学院 A kind of chemical vapor depsotition equipment and its deposition method for realizing batch cutter rotation

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2128637A (en) * 1982-09-28 1984-05-02 Technion Res & Dev Foundation Depositing a carbon film on a substrate
US4900628A (en) * 1986-07-23 1990-02-13 Sumitomo Electric Industries, Ltd. Gaseous phase synthesized diamond and method for synthesizing same
EP0413394A1 (en) * 1989-08-17 1991-02-20 Philips Patentverwaltung GmbH Method for obtaining polycrystallinic diamond layers
US5145712A (en) * 1991-02-08 1992-09-08 Center For Innovative Technology Chemical deposition of diamond
JPH04329879A (en) * 1991-04-30 1992-11-18 Shimadzu Corp Formation of diamondlike carbon film
WO1993005207A1 (en) * 1991-09-03 1993-03-18 Chang R P H Method of nucleating diamond and article produced thereby
WO1994027323A1 (en) * 1993-05-06 1994-11-24 Kobe Steel Europe Limited Preparation of nucleated silicon surfaces

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2128637A (en) * 1982-09-28 1984-05-02 Technion Res & Dev Foundation Depositing a carbon film on a substrate
US4900628A (en) * 1986-07-23 1990-02-13 Sumitomo Electric Industries, Ltd. Gaseous phase synthesized diamond and method for synthesizing same
EP0413394A1 (en) * 1989-08-17 1991-02-20 Philips Patentverwaltung GmbH Method for obtaining polycrystallinic diamond layers
US5145712A (en) * 1991-02-08 1992-09-08 Center For Innovative Technology Chemical deposition of diamond
JPH04329879A (en) * 1991-04-30 1992-11-18 Shimadzu Corp Formation of diamondlike carbon film
WO1993005207A1 (en) * 1991-09-03 1993-03-18 Chang R P H Method of nucleating diamond and article produced thereby
WO1994027323A1 (en) * 1993-05-06 1994-11-24 Kobe Steel Europe Limited Preparation of nucleated silicon surfaces

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Applied Physics Letters, Vol. 56, pages 1968-1970, 1990 *
Applied Physics Letters, Vol. 59, pages 3461-3463, 1991 *
Applied Physics Letters, Vol. 60, pages 698-700, 1992 *
Physical Review B, Vol. 45, pages 11067-11084, 1992 *
WPI Accession No: 93-003364/01 & JP 040329879 A *

Also Published As

Publication number Publication date
GB2270326A (en) 1994-03-09
GB9317830D0 (en) 1993-10-13

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20010827