GB2251978A - Forming a colour filter on a semiconductor substrate having a pixel matrix - Google Patents
Forming a colour filter on a semiconductor substrate having a pixel matrix Download PDFInfo
- Publication number
- GB2251978A GB2251978A GB9114523A GB9114523A GB2251978A GB 2251978 A GB2251978 A GB 2251978A GB 9114523 A GB9114523 A GB 9114523A GB 9114523 A GB9114523 A GB 9114523A GB 2251978 A GB2251978 A GB 2251978A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- forming
- lens
- inter
- colour filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 239000011159 matrix material Substances 0.000 title claims abstract description 9
- 239000010410 layer Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000011229 interlayer Substances 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 238000007669 thermal treatment Methods 0.000 claims abstract description 5
- 238000009499 grossing Methods 0.000 claims description 8
- 238000004043 dyeing Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000003086 colorant Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 3
- 239000001828 Gelatine Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000005018 casein Substances 0.000 description 2
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 2
- 235000021240 caseins Nutrition 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229920000159 gelatin Polymers 0.000 description 2
- 235000019322 gelatine Nutrition 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ORWQBKPSGDRPPA-UHFFFAOYSA-N 3-[2-[ethyl(methyl)amino]ethyl]-1h-indol-4-ol Chemical compound C1=CC(O)=C2C(CCN(C)CC)=CNC2=C1 ORWQBKPSGDRPPA-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Liquid Crystal (AREA)
Abstract
A method of manufacturing a colour filter on a flat surface (39) of a semiconductor substrate having a matrix of pixels (32, 33, 34) comprises forming a discrete colour filter region (41, 45, 49) on the flat surface over each of the pixels and forming at least one inter-layer 43, 47, 51 between the discrete colour filter regions, forming a lens layer on the uppermost inter-layer, and forming lens patterns 54 which are flat at each portion corresponding to a respective underlying pixel and have a varying thickness at the edges of these flat portions, by photographically exposing and developing the lens layer, and forming lenses by thermal treatment of the lens patterns. This minimizes the effect of temperature in the thermal process, and allows the focal length of the lenses to be selected regardless of the thickness of the lenses. <IMAGE>
Description
FORMING A COLOUR FILTER ON A SEMICONDUCTOR
SUBSTRATE HAVING A PIXEL MATRIX
The present invention relates to a method of manufacturing a colour filter on a flat surface of a semiconductor substrate having a matrix of pixels, and to an image-sensing device formed thereby, and is particulary useful in a solid-state colour image-sensing device.
Recently, solid state image-sensing devices, which are able to replace electron tubes and thus are spotlighted as the image-sensing devices of the next generation, have been able to achieve colour sensing by forming a colour filter at an upper surface of an optical -to-electrical converter region.
As for the particular image-sensing element, MOS transistors, phototransistors, and CCDs (Charged Coupled
Devices) have mainly been used.
In the image-sensing devices using CCDs, which are mainly used in small-sized movie camera, many pixels are required, and they need a high sensitivity, hence the development of a technology for forming focusing lenses on the colour filter.
The colour filters are divided into two types: an organic filter made by dyeing organic materials such as casein and gelatine, and an inorganic filter using optical interference.
Figures 1 (A)-(D) show the steps of manufacturing a conventional colour filter.
Referring to Fig. 1(A), a silicon substrate 1 has concave and convex portions. At the surfaces of the concave portions, photodiodes 2, 3 and 4 are formed, and at the convex surfaces a conducting layer 5 and an insulating layer 7 are formed.
On this CCD, a smoothing layer 9 of a transparent material such as polyimide is formed, and on this smoothing layer 9 a dyed layer 11, which is made of casein or gelatine containing a specified amount of ammonium, is formed over the region corresponding to the photodiode 2. The dyed layer 11 is dyed with magenta, cyan or yellow. Next, an inter-layer 13 is formed by depositing polyimide (the same composition as the smoothing layer) on the entire surface of the above-described structure.
Referring to Fig. 1(B), dyed layers 15 and 19 and inter-layers 17 and 21 are sequentially formed on the inter-layer 13 in the same manner. The inter-layer 17 is used to prevent the colours from mixing between the dyed layers 15 and 19.
Subsequently, a lens layer 23 is formed by depositing a light-sensitive material such as acrylic resin and then exposing this photographically. In this lens layer 23, only the parts other than the parts over the photodiodes 2, 3 and 4 are exposed, by using a mask 25.
Referring to Fig. 1(C), the exposed parts are removed by a development process after removing the mask 25, and thus lens patterns 24 are formed on the photodiodes 2, 3 and 4.
Referring to Fig. 1(D), lenses 27, 28 and 29 corresponding to respective photodiodes 2, 3 and 4 are formed by a thermal process. During this thermal process, the edges of the lens patterns 24 begin to melt. The thermal process is undertaken at a low and then a high temperature. Under the low temperature process, the edges of the lens patterns 24 are made molten; then by the high-temperature process, the lenses 27, 28 and 29 are made gradually to adopt a specified curvature over their whole surface.
On the other hand, the focal length of the lenses is changed as a function of their thickness. That is, if the lenses 27, 28 and 29 are thick, the focal length is short, and if the lenses are thin, the focal length is long.
Thus, if the focal length is to be long, the lenses 27, 28 and 29 must be formed thinly by the high temperature process, while if the focal length is to be short, the lenses 27, 28 and 29 must be formed thickly by the low-temperature process.
The problem is that if the thermal process is carried out at the high temperature to form thin lenses, the shape variation is severe, thereby making the process unstable; while if the process is carried out at the low temperature to form thick lenses, the shape of the lenses is not complete, thereby making the formation of lenses difficult.
The present invention has been made in consideration of this problem, and provides a method of manufacturing a colour filter on a flat surface of a semiconductor substrate having a matrix of pixels beneath that surface, comprising the steps of:
forming a discrete colour filter region on the flat surface over each of said pixels and forming at least one inter-layer between the discrete colour filter regions,
forming a light-sensitive lens layer on a flat surface of the inter-layer, or of the highest inter-layer, and forming lens patterns, which are flat at each portion corresponding to a respective underlying pixel and have a multiple level thickness gradation at the edges of these flat portions, by exposing and developing said lens layer, and
forming lenses by thermal treatment of said lens patterns.
The invention also provides a colour image-sensing device manufactured in accordance with this method, comprising a semiconductor substrate having a matrix of pixels being optical-to-electrical converters, colour filter regions over respective pixels and separated by at least one inter-layer, and a layer of lenses over the, or the uppermost, inter-layer, each lens being centred over a corresponding pixel and having a flat portion, of uniform thickness, overlying the pixel, and an edge portion whose surface has a predetermined radius of curvature.
With the benefit of the invention, the yield may be improved by making the processes for forming lenses stable in such a manner as to minimize the effect of the temperature of the thermal process. Further, the sensitivity of the pixels may be improved by controlling the focal length of the lenses, which is possible regardless of their thickness, by changing their shape.
A preferred embodiment of the present invention will now material as that of the first inter-layer 43.
After this, a lens layer 53 of novolac light-sensitive resin is formed. The lens layer 53 is then exposed to light through a mask 55 of which the light transmissivity varies as a function of position. The light transmissivity, in this example, varies stepwise with a repeated periodic pattern as shown in detail in the graph at the bottom of Figure 2(B), which shows the transmissivity increasing from 0% stepwise to 50%, 75% and 90%, and then decreasing by the same steps in reverse. (This represents a diametric section through each lens pattern, which is circular in plan).
In the mask 55, the portions corresponding to the photodiodes 32, 33 and 34 have zero transmissivity, and, with increasing distance from the centres of those portions, the transmissivity increases.
As shown in Figure 2(C), lens patterns 54 are formed by developing the lens layer 53 after removing the mask 55. Thus the lens patterns 54 are formed by a photographic technique.
At this time, the lens patterns 54 are formed with step-shaped edges, because the degree of exposure in the pattern is differentiated by the mask 55 and thus the degree of removal of material from the lens layer 53 is on the upper surface of the smoothing layer 39, as a layer 0.4-1.2pm in thickness.
Subsequently, a first dyed layer 41 is formed by spreading a dyeing material on the entire surface of the structure. This dyeing material reacts with the dyed layer pattern, and is therefore held there, but does not react on the smoothing layer 39. The unwanted dyeing material remaining on the smoothing layer 39 is then removed by deionized water. The dyeing material used for the first dyed layer 41 is one of the colours magenta, cyan and yellow. For example, the first dyed layer 41 is dyed with magenta to obtain the magenta spectrum.
Next, a first inter-layer 43 of lpm thickness is formed on the entire surface of structure using the same material as for the smoothing layer 39.
As shown in Figure 2(B), second and third dyed layers 45 and 49 at positions corresponding to the second and third photodiodes 33 and 34 are formed on the first inter-layer 43 in the same manner, and they are dyed respectively with cyan and yellow for obtaining the cyan and yellow spectra.
Second and third inter-layers 47 and 51 are formed on the first and third dyed layers 45 and 49 using the same material as that of the first inter-layer 43.
After this, a lens layer 53 of novolac light-sensitive resin is formed. The lens layer 53 is then exposed to light through a mask 55 of which the light transmissivity varies as a function of position. The light transmissivity, in this example, varies stepwise with a repeated periodic pattern as shown in detail in the graph at the bottom of Figure 2(B), which shows the transmissivity increasing from 0% stepwise to 50%, 75% and 90%, and then decreasing by the same steps in reverse. (This represents a diametric section through each lens pattern, which is circular in plan).
In the mask 55, the portions corresponding to the photodiodes 32, 33 and 34 have zero transmissivity, and, with increasing distance from the centres of those portions, the transmissivity increases.
As shown in Figure 2(C), lens patterns 54 are formed by developing the lens layer 53 after removing the mask 55. Thus the lens patterns 54 are formed by a photographic technique.
At this time, the lens patterns 54 are formed with step-shaped edges, because the degree of exposure in the pattern is differentiated by the mask 55 and thus the degree of removal of material from the lens layer 53 is differentiated in the developing process of the lens layer 53.
The lens patterns 54 are flat at the portions corresponding to the photodiodes 32, 33 and 34, since material from these portions is not removed; as the distance increases from there, the removal ratio increases.
As shown in Figure 2(D), first, second, and third lenses 57, 58 and 59 are formed by a thermal process from the lens patterns 54.
With this thermal process, since the step heights are relatively small, the portions of each lens, apart from the central flat portions, are smoothly curved and have a predetermined radius of curvature.
The flat portions of the lenses 57, 58 and 59 transmit linearly the incident light without reflection and the other portions refract the incident light to focus it on the photodiodes 32, 33 and 34.
To summarize, the focal length of each lens is changed according to the structure of the colour filters, and the portions of the lens patterns other than the portions corresponding to the photodiodes are formed with a step-shape by using a mask which controls the amount of exposure as a function of position.
Next, by a low-temperature thermal process, the central lens portions corresponding to the photodiodes of the lens patterns are left flat, while the other portions are smoothed by melting to adopt a specified radius of curvature.
These lenses can have a predetermined focal length by controlling the radius of curvature regardless of the thickness of the lenses.
Thus, the present invention improves the yield by minimizing the effect of the thermal process temperature in forming the lenses and also improves the sensitivity of the colour filter since it can easily control the focal length regardless of the thickness of lens.
Although the invention has been illustrated in terms of an improvement in a specific manufacturing method using three dyed layers separated by inter-layers, it will be appreciated that alternative colour filter structures are feasible, provided that they match the pixels and present a flat surface for the lens formation.
Moreover, the nature of the gradation of thickness of the lenses is selectable - it may be stepped, but continuous gradation, still providing multiple level thickness, is also feasible. Further, although the edges of the lenses are said to have a predetermined radius of curvature, it will be appreciated that the same advantages may be obtained where these edge surfaces are not precisely part-spherical, ie where their curvature is predetermined but is not of a unique radius.
Claims (13)
1. A method of manufacturing a colour filter on a flat surface of a semiconductor substrate having a matrix of pixels beneath that surface, comprising the steps of:
forming a discrete colour filter region on the flat surface over each of said pixels and forming at least one inter-layer between the discrete colour filter regions,
forming a light sensitive lens layer on a flat surface of the inter-layer, or of the highest inter-layer, and forming lens patterns, which are flat at each portion corresponding to a respective underlying pixel and have a multiple level thickness gradation at the edges of these flat portions, by exposing and developing said lens layer, and
forming lenses by thermal treatment of said lens patterns.
2. A method according to Claim 1, in which the substrate is an image-sensing device of which each pixel is an optical-to-electrical converter.
3. A method according to Claim 1 or 2, comprising the previous step of forming a smoothing layer over the matrix of pixels thereby to form the said flat surface.
4. A method according to Claim 1, 2 or 3, in which the colour filter-forming step comprises: forming a dyed layer on the flat surface over one of said pixels and forming an inter-layer on said dyed layer; and repeating the above process at least twice for forming further successive dyed layers and inter-layers separating the dyed layers; whereby dyed layers of at least three different colours are formed on the semiconductor substrate over respective pixels.
5. A method according to any preceding claim, wherein the lens layer is exposed through a mask which has a transmissivity varying gradually with position even over a single lens pattern.
6. A method according to Claim 5, wherein said mask has substantially zero transmissivity at the portions overlying respective pixels, while the transmissivity increases with distance from those portions.
7. A method according to any preceding claim, wherein said thermal treatment is carried out at the low temperature typical of conventional thick-lens formation# as described herein with reference to Figures 1(A) to 1(D).
8. A method according to any preceding claim, wherein said lenses are flat at each portion overlying a respective pixel, and have a predetermined radius of curvature at the other portions, corresponding to the edges of the lenses.
9. A method according to any preceding claim, in which the said thickness gradation of the lens patterns, before thermal treatment, is a stepwise gradation with at least three steps of thickness.
10. A method according to any preceding claim, in which the colour filter regions are formed photolithographically using a selective dyeing process over the said flat surface or over a respective inter-layer, as the case may be.
11. A colour image-sensing device manufactured in accordance with any preceding method, comprising a semiconductor substrate having a matrix of pixels being optical-to-electrical converters, colour filter regions over respective pixels and separated by at least one inter-layer, and a layer of lenses over the, or the uppermost, inter-layer, each lens being centred over a corresponding pixel and having a flat portion, of uniform thickness, overlying the pixel, and an edge portion whose surface has a predetermined radius of curvature.
12. A method of manufacturing a colour filter on a semiconductor substrate, substantially as described herein with reference to Figures 2(A) and 2(B) of the accompanying drawings.
13. An image-sensing device substantially as described herein with reference to Figures 2(A) and 2(B) of the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900022929A KR930003687B1 (en) | 1990-12-31 | 1990-12-31 | Manufacturing method of color filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9114523D0 GB9114523D0 (en) | 1991-08-21 |
| GB2251978A true GB2251978A (en) | 1992-07-22 |
Family
ID=19309330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9114523A Withdrawn GB2251978A (en) | 1990-12-31 | 1991-07-05 | Forming a colour filter on a semiconductor substrate having a pixel matrix |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH04234705A (en) |
| KR (1) | KR930003687B1 (en) |
| GB (1) | GB2251978A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0593197A1 (en) * | 1992-10-06 | 1994-04-20 | Matsushita Electronics Corporation | Solid state colour imaging device and method of manufacturing the same |
| CN1089951C (en) * | 1994-01-28 | 2002-08-28 | 松下电器产业株式会社 | Solid photographic device and manufacture of same |
| US20100162813A1 (en) * | 2008-12-27 | 2010-07-01 | Hon Hai Precision Industry Co., Ltd. | Sensor assembly |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0124025A2 (en) * | 1983-04-26 | 1984-11-07 | Kabushiki Kaisha Toshiba | Solid-state color imaging device and process for fabricating the same |
| EP0242663A2 (en) * | 1986-04-18 | 1987-10-28 | EASTMAN KODAK COMPANY (a New Jersey corporation) | Light sensing devices with lenticular pixels |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5968967A (en) * | 1982-10-13 | 1984-04-19 | Toshiba Corp | Manufacturing method of solid-state imaging device |
| JPH01246505A (en) * | 1988-03-29 | 1989-10-02 | Canon Inc | Solid state image pickup element |
| JPH02282702A (en) * | 1989-04-25 | 1990-11-20 | Seiko Epson Corp | Manufacture of lens array |
-
1990
- 1990-12-31 KR KR1019900022929A patent/KR930003687B1/en not_active IP Right Cessation
-
1991
- 1991-07-05 JP JP3165766A patent/JPH04234705A/en active Pending
- 1991-07-05 GB GB9114523A patent/GB2251978A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0124025A2 (en) * | 1983-04-26 | 1984-11-07 | Kabushiki Kaisha Toshiba | Solid-state color imaging device and process for fabricating the same |
| EP0242663A2 (en) * | 1986-04-18 | 1987-10-28 | EASTMAN KODAK COMPANY (a New Jersey corporation) | Light sensing devices with lenticular pixels |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0593197A1 (en) * | 1992-10-06 | 1994-04-20 | Matsushita Electronics Corporation | Solid state colour imaging device and method of manufacturing the same |
| US5404005A (en) * | 1992-10-06 | 1995-04-04 | Matsushita Electronic Corporation | Solid state imaging device and method of manufacturing same |
| CN1089951C (en) * | 1994-01-28 | 2002-08-28 | 松下电器产业株式会社 | Solid photographic device and manufacture of same |
| US20100162813A1 (en) * | 2008-12-27 | 2010-07-01 | Hon Hai Precision Industry Co., Ltd. | Sensor assembly |
| US8253242B2 (en) * | 2008-12-27 | 2012-08-28 | Hon Hai Precision Industry Co., Ltd. | Sensor assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| KR930003687B1 (en) | 1993-05-08 |
| GB9114523D0 (en) | 1991-08-21 |
| KR920013001A (en) | 1992-07-28 |
| JPH04234705A (en) | 1992-08-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |