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GB2241845B - Supply voltage adjusting circuit of a field effect type semiconductor device - Google Patents

Supply voltage adjusting circuit of a field effect type semiconductor device

Info

Publication number
GB2241845B
GB2241845B GB9101041A GB9101041A GB2241845B GB 2241845 B GB2241845 B GB 2241845B GB 9101041 A GB9101041 A GB 9101041A GB 9101041 A GB9101041 A GB 9101041A GB 2241845 B GB2241845 B GB 2241845B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
supply voltage
type semiconductor
field effect
adjusting circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9101041A
Other versions
GB9101041D0 (en
GB2241845A (en
Inventor
Yutaka Arita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB9101041D0 publication Critical patent/GB9101041D0/en
Publication of GB2241845A publication Critical patent/GB2241845A/en
Application granted granted Critical
Publication of GB2241845B publication Critical patent/GB2241845B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
GB9101041A 1990-01-18 1991-01-17 Supply voltage adjusting circuit of a field effect type semiconductor device Expired - Fee Related GB2241845B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010851A JPH03214659A (en) 1990-01-18 1990-01-18 Power supply voltage setting section of field effect semiconductor device

Publications (3)

Publication Number Publication Date
GB9101041D0 GB9101041D0 (en) 1991-02-27
GB2241845A GB2241845A (en) 1991-09-11
GB2241845B true GB2241845B (en) 1994-09-07

Family

ID=11761859

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9101041A Expired - Fee Related GB2241845B (en) 1990-01-18 1991-01-17 Supply voltage adjusting circuit of a field effect type semiconductor device

Country Status (3)

Country Link
JP (1) JPH03214659A (en)
DE (1) DE4101419C2 (en)
GB (1) GB2241845B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4143358C2 (en) * 1990-06-19 1996-05-23 Mitsubishi Electric Corp Integrated semiconductor circuit
WO2004027995A2 (en) * 2002-09-19 2004-04-01 Sun Microsystems, Inc. Integrated circuit comprising an sstl (stub series terminated logic) pre-driver stage using regulated power supply and method for performing an sstl operation
US6873503B2 (en) 2002-09-19 2005-03-29 Sun Microsystems, Inc. SSTL pull-up pre-driver design using regulated power supply
DE102004028076A1 (en) * 2004-06-09 2006-01-05 Infineon Technologies Ag Integrated semiconductor memory, has voltage generators for providing identical electric potential, where generators are arranged in direct proximity to respective memory cell array

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0190027A2 (en) * 1985-01-26 1986-08-06 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
WO1987005760A1 (en) * 1986-03-20 1987-09-24 Motorola, Inc. Cmos voltage translator
GB2207318A (en) * 1987-05-19 1989-01-25 Gazelle Microcircuits Inc Buffer circuit
US4855619A (en) * 1987-11-17 1989-08-08 Xilinx, Inc. Buffered routing element for a user programmable logic device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750552B2 (en) * 1985-12-20 1995-05-31 三菱電機株式会社 Internal potential generation circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0190027A2 (en) * 1985-01-26 1986-08-06 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
WO1987005760A1 (en) * 1986-03-20 1987-09-24 Motorola, Inc. Cmos voltage translator
GB2207318A (en) * 1987-05-19 1989-01-25 Gazelle Microcircuits Inc Buffer circuit
US4855619A (en) * 1987-11-17 1989-08-08 Xilinx, Inc. Buffered routing element for a user programmable logic device

Also Published As

Publication number Publication date
DE4101419C2 (en) 1994-12-22
JPH03214659A (en) 1991-09-19
GB9101041D0 (en) 1991-02-27
GB2241845A (en) 1991-09-11
DE4101419A1 (en) 1991-07-25

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19951107

PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970117