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GB2228616B - Opto-electronic device - Google Patents

Opto-electronic device

Info

Publication number
GB2228616B
GB2228616B GB8903996A GB8903996A GB2228616B GB 2228616 B GB2228616 B GB 2228616B GB 8903996 A GB8903996 A GB 8903996A GB 8903996 A GB8903996 A GB 8903996A GB 2228616 B GB2228616 B GB 2228616B
Authority
GB
United Kingdom
Prior art keywords
opto
electronic device
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8903996A
Other versions
GB2228616A (en
GB8903996D0 (en
Inventor
Wong Sang Lee
Stephen Wilfrid Bland
Sally Anne Kitching
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Nortel Networks Optical Components Ltd
Original Assignee
STC PLC
Northern Telecom Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC, Northern Telecom Europe Ltd filed Critical STC PLC
Priority to GB8903996A priority Critical patent/GB2228616B/en
Publication of GB8903996D0 publication Critical patent/GB8903996D0/en
Publication of GB2228616A publication Critical patent/GB2228616A/en
Application granted granted Critical
Publication of GB2228616B publication Critical patent/GB2228616B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
GB8903996A 1989-02-22 1989-02-22 Opto-electronic device Expired - Lifetime GB2228616B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8903996A GB2228616B (en) 1989-02-22 1989-02-22 Opto-electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8903996A GB2228616B (en) 1989-02-22 1989-02-22 Opto-electronic device

Publications (3)

Publication Number Publication Date
GB8903996D0 GB8903996D0 (en) 1989-04-05
GB2228616A GB2228616A (en) 1990-08-29
GB2228616B true GB2228616B (en) 1992-11-04

Family

ID=10652095

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8903996A Expired - Lifetime GB2228616B (en) 1989-02-22 1989-02-22 Opto-electronic device

Country Status (1)

Country Link
GB (1) GB2228616B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE470116B (en) * 1992-04-03 1993-11-08 Asea Brown Boveri Detector circuit with a semiconductor diode working as a detector and an amplifier circuit integrated with the diode
US8901703B2 (en) 2004-05-06 2014-12-02 Nxp, B.V. Electronic device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073889A2 (en) * 1981-09-08 1983-03-16 ANT Nachrichtentechnik GmbH Monolitic input stage for an optical receiver
US4393574A (en) * 1980-12-05 1983-07-19 Kabushiki Kaisha Daini Seikosha Method for fabricating integrated circuits
EP0162677A2 (en) * 1984-05-18 1985-11-27 Fujitsu Limited Method of forming a semiconductor device comprising an optical and an electronic element
GB2168528A (en) * 1984-12-15 1986-06-18 Stc Plc PIN-diode and FET

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393574A (en) * 1980-12-05 1983-07-19 Kabushiki Kaisha Daini Seikosha Method for fabricating integrated circuits
EP0073889A2 (en) * 1981-09-08 1983-03-16 ANT Nachrichtentechnik GmbH Monolitic input stage for an optical receiver
EP0162677A2 (en) * 1984-05-18 1985-11-27 Fujitsu Limited Method of forming a semiconductor device comprising an optical and an electronic element
GB2168528A (en) * 1984-12-15 1986-06-18 Stc Plc PIN-diode and FET

Also Published As

Publication number Publication date
GB2228616A (en) 1990-08-29
GB8903996D0 (en) 1989-04-05

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950222