[go: up one dir, main page]

GB2222416B - Processes using disilane - Google Patents

Processes using disilane

Info

Publication number
GB2222416B
GB2222416B GB8919291A GB8919291A GB2222416B GB 2222416 B GB2222416 B GB 2222416B GB 8919291 A GB8919291 A GB 8919291A GB 8919291 A GB8919291 A GB 8919291A GB 2222416 B GB2222416 B GB 2222416B
Authority
GB
United Kingdom
Prior art keywords
disilane
processes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8919291A
Other versions
GB2222416A (en
GB8919291D0 (en
Inventor
Nicholas Gralenski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qorvo US Inc
Original Assignee
Watkins Johnson Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Watkins Johnson Co filed Critical Watkins Johnson Co
Publication of GB8919291D0 publication Critical patent/GB8919291D0/en
Publication of GB2222416A publication Critical patent/GB2222416A/en
Application granted granted Critical
Publication of GB2222416B publication Critical patent/GB2222416B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H01L21/32053—Deposition of metallic or metal-silicide layers of metal-silicide layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
GB8919291A 1988-08-31 1989-08-24 Processes using disilane Expired - Fee Related GB2222416B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23882688A 1988-08-31 1988-08-31

Publications (3)

Publication Number Publication Date
GB8919291D0 GB8919291D0 (en) 1989-10-04
GB2222416A GB2222416A (en) 1990-03-07
GB2222416B true GB2222416B (en) 1993-03-03

Family

ID=22899487

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8919291A Expired - Fee Related GB2222416B (en) 1988-08-31 1989-08-24 Processes using disilane

Country Status (4)

Country Link
JP (1) JPH02125875A (en)
KR (1) KR900003970A (en)
DE (1) DE3928765A1 (en)
GB (1) GB2222416B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69404415T2 (en) * 1993-10-14 1997-12-04 Applied Materials Inc Process for the deposition of adhering tungsten silicide films
JP2674682B2 (en) * 1994-07-15 1997-11-12 キヤノン販売株式会社 Film forming method and film forming apparatus
DE19742972A1 (en) * 1997-09-29 1999-04-08 Siemens Ag Method for forming a low-resistance interconnect area on a semiconductor substrate
JP2000294775A (en) * 1999-04-07 2000-10-20 Sony Corp Manufacture of semiconductor device
CN113061877A (en) * 2021-04-02 2021-07-02 杭州中欣晶圆半导体股份有限公司 High-cleanliness APCVD film forming equipment and film forming method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128670A (en) * 1977-11-11 1978-12-05 International Business Machines Corporation Fabrication method for integrated circuits with polysilicon lines having low sheet resistance
EP0071029A2 (en) * 1981-07-30 1983-02-09 International Business Machines Corporation Method for fabricating self-passivated composite silicon-silicide conductive electrodes
EP0183995A1 (en) * 1984-11-02 1986-06-11 Hitachi, Ltd. Semiconductor device having a polycrystalline silicon interconnection layer and method for its manufacture
EP0256337A1 (en) * 1986-08-11 1988-02-24 International Business Machines Corporation Low pressure chemical vapor deposition method fpr forming tungsten silicide
EP0295367A1 (en) * 1987-05-22 1988-12-21 International Business Machines Corporation Gate structure in semiconductor devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128670A (en) * 1977-11-11 1978-12-05 International Business Machines Corporation Fabrication method for integrated circuits with polysilicon lines having low sheet resistance
EP0071029A2 (en) * 1981-07-30 1983-02-09 International Business Machines Corporation Method for fabricating self-passivated composite silicon-silicide conductive electrodes
EP0183995A1 (en) * 1984-11-02 1986-06-11 Hitachi, Ltd. Semiconductor device having a polycrystalline silicon interconnection layer and method for its manufacture
EP0256337A1 (en) * 1986-08-11 1988-02-24 International Business Machines Corporation Low pressure chemical vapor deposition method fpr forming tungsten silicide
EP0295367A1 (en) * 1987-05-22 1988-12-21 International Business Machines Corporation Gate structure in semiconductor devices

Also Published As

Publication number Publication date
GB2222416A (en) 1990-03-07
KR900003970A (en) 1990-03-27
JPH02125875A (en) 1990-05-14
GB8919291D0 (en) 1989-10-04
DE3928765A1 (en) 1990-03-01

Similar Documents

Publication Publication Date Title
EP0332928A3 (en) Fire-hemming elements
GB2222416B (en) Processes using disilane
AU105058S (en) Sunlounger
GB2220466B (en) Trackerball arrangement
GB8814340D0 (en) Process
GB8802484D0 (en) Process
GB8824672D0 (en) Process
GB8824068D0 (en) Santising process
GB8800312D0 (en) Process
PL275148A1 (en) Anorching set
SU1592264A1 (en) Cargo-lifting arrangement
GB8827475D0 (en) Process
GB8818084D0 (en) Process
GB8816337D0 (en) Process
GB8826876D0 (en) Process
GB8811996D0 (en) Process
GB8808923D0 (en) Process
GB8919045D0 (en) Process
GB8805978D0 (en) Process
GB8818085D0 (en) Process
GB8819107D0 (en) Process
GB8821012D0 (en) Process
GB8829912D0 (en) Process
GB8825298D0 (en) Process
GB8820020D0 (en) Process

Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20000824