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GB2222306B - Field effect transistor devices - Google Patents

Field effect transistor devices

Info

Publication number
GB2222306B
GB2222306B GB8819949A GB8819949A GB2222306B GB 2222306 B GB2222306 B GB 2222306B GB 8819949 A GB8819949 A GB 8819949A GB 8819949 A GB8819949 A GB 8819949A GB 2222306 B GB2222306 B GB 2222306B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
transistor devices
devices
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8819949A
Other versions
GB8819949D0 (en
GB2222306A (en
Inventor
John Nigel Ellis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB8819949A priority Critical patent/GB2222306B/en
Publication of GB8819949D0 publication Critical patent/GB8819949D0/en
Publication of GB2222306A publication Critical patent/GB2222306A/en
Application granted granted Critical
Publication of GB2222306B publication Critical patent/GB2222306B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6218—Fin field-effect transistors [FinFET] of the accumulation type
GB8819949A 1988-08-23 1988-08-23 Field effect transistor devices Expired GB2222306B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8819949A GB2222306B (en) 1988-08-23 1988-08-23 Field effect transistor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8819949A GB2222306B (en) 1988-08-23 1988-08-23 Field effect transistor devices

Publications (3)

Publication Number Publication Date
GB8819949D0 GB8819949D0 (en) 1988-09-21
GB2222306A GB2222306A (en) 1990-02-28
GB2222306B true GB2222306B (en) 1992-08-12

Family

ID=10642533

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8819949A Expired GB2222306B (en) 1988-08-23 1988-08-23 Field effect transistor devices

Country Status (1)

Country Link
GB (1) GB2222306B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2789931B2 (en) * 1991-05-27 1998-08-27 日本電気株式会社 Semiconductor device
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
WO1997016854A1 (en) * 1995-11-01 1997-05-09 Amo Gmbh Semiconductor component with prismatic channel area
DE19846063A1 (en) * 1998-10-07 2000-04-20 Forschungszentrum Juelich Gmbh Method of manufacturing a double-gate MOSFET
DE10250984A1 (en) 2002-10-29 2004-05-19 Hahn-Meitner-Institut Berlin Gmbh Field effect transistor and method for its production
DE10339529A1 (en) * 2003-08-21 2005-03-24 Hahn-Meitner-Institut Berlin Gmbh Vertical nano-transistor, method for its manufacture and memory arrangement
US7652320B2 (en) * 2005-03-03 2010-01-26 Macronix International Co., Ltd. Non-volatile memory device having improved band-to-band tunneling induced hot electron injection efficiency and manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
EP0166261A2 (en) * 1984-06-27 1986-01-02 Energy Conversion Devices, Inc. Static field-induced semiconductor devices
EP0175215A1 (en) * 1984-09-06 1986-03-26 Siemens Aktiengesellschaft Thin film field-effect semiconductor device
EP0239958A2 (en) * 1986-03-29 1987-10-07 Hitachi, Ltd. Thin film semiconductor device and method of manufacturing the same
GB2211022A (en) * 1987-10-09 1989-06-21 Marconi Electronic Devices Silicon-on-insulator field effect transistor with improved turn-on

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
EP0166261A2 (en) * 1984-06-27 1986-01-02 Energy Conversion Devices, Inc. Static field-induced semiconductor devices
EP0175215A1 (en) * 1984-09-06 1986-03-26 Siemens Aktiengesellschaft Thin film field-effect semiconductor device
EP0239958A2 (en) * 1986-03-29 1987-10-07 Hitachi, Ltd. Thin film semiconductor device and method of manufacturing the same
GB2211022A (en) * 1987-10-09 1989-06-21 Marconi Electronic Devices Silicon-on-insulator field effect transistor with improved turn-on

Also Published As

Publication number Publication date
GB8819949D0 (en) 1988-09-21
GB2222306A (en) 1990-02-28

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Expiry date: 20080822