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GB2198056B - Epitaxial strengthening of crystals - Google Patents

Epitaxial strengthening of crystals

Info

Publication number
GB2198056B
GB2198056B GB8725597A GB8725597A GB2198056B GB 2198056 B GB2198056 B GB 2198056B GB 8725597 A GB8725597 A GB 8725597A GB 8725597 A GB8725597 A GB 8725597A GB 2198056 B GB2198056 B GB 2198056B
Authority
GB
United Kingdom
Prior art keywords
crystals
epitaxial
strengthening
epitaxial strengthening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8725597A
Other versions
GB8725597D0 (en
GB2198056A (en
Inventor
Robert Craig Morris
Ii John Edward Marion
Devlin Michael Gualtieri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Energy
Original Assignee
US Department of Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Energy filed Critical US Department of Energy
Publication of GB8725597D0 publication Critical patent/GB8725597D0/en
Publication of GB2198056A publication Critical patent/GB2198056A/en
Application granted granted Critical
Publication of GB2198056B publication Critical patent/GB2198056B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB8725597A 1986-11-07 1987-11-02 Epitaxial strengthening of crystals Expired - Fee Related GB2198056B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/927,993 USH557H (en) 1986-11-07 1986-11-07 Epitaxial strengthening of crystals

Publications (3)

Publication Number Publication Date
GB8725597D0 GB8725597D0 (en) 1987-12-09
GB2198056A GB2198056A (en) 1988-06-08
GB2198056B true GB2198056B (en) 1990-09-26

Family

ID=25455558

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8725597A Expired - Fee Related GB2198056B (en) 1986-11-07 1987-11-02 Epitaxial strengthening of crystals

Country Status (6)

Country Link
US (1) USH557H (en)
JP (1) JPH01123000A (en)
DE (1) DE3736731A1 (en)
FR (1) FR2607833A1 (en)
GB (1) GB2198056B (en)
IT (1) IT1223082B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5573862A (en) * 1992-04-13 1996-11-12 Alliedsignal Inc. Single crystal oxide turbine blades
DE4401626A1 (en) * 1994-01-20 1995-07-27 Max Planck Gesellschaft Method and device for producing crystalline layers
US6122993A (en) * 1998-01-26 2000-09-26 Alliedsignal Inc. Isotropic energy storage flywheel rotor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1221590A (en) * 1967-08-04 1971-02-03 Siemens Ag Improvements in or relating to semiconductor devices
GB1251723A (en) * 1968-03-25 1971-10-27
GB1457962A (en) * 1973-03-22 1976-12-08 Rca Corp Method of epitaxially depositing a semi-conductor material on a substrate
US4180825A (en) * 1977-09-16 1979-12-25 Harris Corporation Heteroepitaxial deposition of GaP on silicon substrates
US4188244A (en) * 1975-04-10 1980-02-12 Matsushita Electric Industrial Co., Ltd. Method of making a semiconductor light-emitting device utilizing low-temperature vapor-phase deposition
GB2046124A (en) * 1979-03-23 1980-11-12 Philips Nv Magnetic structures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964035A (en) 1974-09-23 1976-06-15 Bell Telephone Laboratories, Incorporated Magnetic devices utilizing garnet epitaxial materials
US4263374A (en) 1978-06-22 1981-04-21 Rockwell International Corporation Temperature-stabilized low-loss ferrite films
EP0044109B1 (en) 1980-07-11 1986-05-28 Koninklijke Philips Electronics N.V. Device for propagating magnetic domains
US4354254A (en) 1980-11-07 1982-10-12 Bell Telephone Laboratories, Incorporated Devices depending on garnet materials
US4544239A (en) 1983-03-16 1985-10-01 Litton Systems, Inc. Compressed bismuth-containing garnet films of replicable low anisotropy field value and devices utilizing same
US4625390A (en) 1983-03-16 1986-12-02 Litton Systems, Inc. Two-step method of manufacturing compressed bismuth-containing garnet films of replicable low anisotropy field value
US4544438A (en) 1984-05-31 1985-10-01 At&T Bell Laboratories Liquid phase epitaxial growth of bismuth-containing garnet films

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1221590A (en) * 1967-08-04 1971-02-03 Siemens Ag Improvements in or relating to semiconductor devices
GB1251723A (en) * 1968-03-25 1971-10-27
GB1457962A (en) * 1973-03-22 1976-12-08 Rca Corp Method of epitaxially depositing a semi-conductor material on a substrate
US4188244A (en) * 1975-04-10 1980-02-12 Matsushita Electric Industrial Co., Ltd. Method of making a semiconductor light-emitting device utilizing low-temperature vapor-phase deposition
US4180825A (en) * 1977-09-16 1979-12-25 Harris Corporation Heteroepitaxial deposition of GaP on silicon substrates
GB2046124A (en) * 1979-03-23 1980-11-12 Philips Nv Magnetic structures

Also Published As

Publication number Publication date
GB8725597D0 (en) 1987-12-09
DE3736731A1 (en) 1988-05-11
GB2198056A (en) 1988-06-08
FR2607833A1 (en) 1988-06-10
IT1223082B (en) 1990-09-12
JPH01123000A (en) 1989-05-16
IT8722555A0 (en) 1987-11-06
USH557H (en) 1988-12-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee