[go: up one dir, main page]

GB2188194A - Carrier for high frequency integrated circuits - Google Patents

Carrier for high frequency integrated circuits Download PDF

Info

Publication number
GB2188194A
GB2188194A GB8607105A GB8607105A GB2188194A GB 2188194 A GB2188194 A GB 2188194A GB 8607105 A GB8607105 A GB 8607105A GB 8607105 A GB8607105 A GB 8607105A GB 2188194 A GB2188194 A GB 2188194A
Authority
GB
United Kingdom
Prior art keywords
carrier
ceramic
ceramic material
metal
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8607105A
Other versions
GB8607105D0 (en
Inventor
John Andrew Sparrow
Timothy Brooks Bambridge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB8607105A priority Critical patent/GB2188194A/en
Publication of GB8607105D0 publication Critical patent/GB8607105D0/en
Publication of GB2188194A publication Critical patent/GB2188194A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

A carrier for high frequency integrated circuits replaces the usual very expensive machined metal carrier by ceramic material (1) which is light and inexpensive to produce. Through holes (4) in the ceramic material (1) form vias which are metal filled and connect with a metal surface (5, 6) on each side of the carrier, one surface (5) being gold. A strip line circuit and a GaAs or like device can be attached by solder or epoxy to the gold surface in which a heat sink can be incorporated if required. The metallising of the ceramic material can be carried out by thick film printing and firing or by metal deposition and plating. <IMAGE>

Description

SPECIFICATION Carrier for high frequency integrated circuits This invention relates to carriers for use in high frequency integrated circuits.
At present, such carriers are made from metal, usually copper, Kovar R.T.M ortungsten-copper, by machining followed by nickel and gold plating ofthe surfaces. This process is expensive and labour intensive.
The present invention aims to provide a carrier which can be easily and more cheaply produced.
According to the invention, there is provided a carrier for a hybrid or high frequency integrated circuit wherein the carrier is made of a ceramic material having a numberofvia holes extending through it, each side of the ceramic carrier being metallised and the metallisation extending into and/orthroughthevia holes in the ceramic material.
The metallising of the ceramic material can be carried out bythickfilm printing andfiring orby metal deposition and plating.
Preferably, the metal on one surface of the ceramic material is gold. The metal on the other surface may be palladium silver.
Astrip line circuit may be attached to the gold surface of the ceramic carrier. This circuit may be carried on a ceramic substrate which is bonded to the ceramic carrier. Further, the strip line circuit may include a GaAs or like device and the substrate may be provided with a hole for receiving this device to enable the device to be bonded directly to the ceramic carrier.
The invention will now be further described, by way of example, with reference to the drawings, in which Figure 1 is a perspective view of one embodiment of a ceramic carrier according to the invention; and Figure 2 is a perspective view of the ceramic carrier shown in Figure 1 to which a ceramic substrate and a strip line circuit have been bonded.
Referring to the drawings, the carrier comprises a ceramic block 1 having a number of via holes4 extending through it. In the preferred embodiment shown in the drawings, the front face 5 is metallised with a layer of gold whilethe rearface 6 is metallised with a layer of palladium silver, the metallisation going through the via holes 4.
As shown in Figure 2, a ceramic substrate 2 carrying a strip line thin orthickfilm strip line circuit is bonded to the ceramic carrier 1 on the front 5 having the gold layer. A hole 3 is provided to enable a GaAs or like device to be placed in the strip line circuit and bonded directly to the ceramic carrier 1.
The device and strip line circuit can be attached by solder or epoxy to the gold surface in which a heat sink may be incorporated if required.
The ceramic carrier shown in the drawings has been found to workto a frequency of 10 GHz but it is anticipated that, with further development, the frequency range can be increased.
The ceramic carrier was produced by combining thickfilm printing and lasercutting techniques after which metallisation was carried outin order to produce printed through via holes with a wire bondable gold layeronthetop surface. The positions of the via holes were arranged to obtain satisfactory performance at 10 GHz. The carrierwas then assembled with a strip line circuit and device, was bonded and tested on a R. F. test bench.
The ceramic carrier according to the invention is considerably lighter in weight since itcan replace a 3m m thick metal carrier. It is also cheap and easy to produce. It can be used in part of a low cost package or hybrid circuit or for any form of high frequency integrated circuit.
The metallisation on the ceramic surfaces may be carried out with different thick film printing inks to produce the printed through vias with different metallisations on the ceramic surfaces.
A metal insert may be placed in the ceramic carrier for devices requiring heat removal.

Claims (10)

1. Acarrierfora hybrid or high frequency integrated circuit wherein the carrier is made of a ceramic material having a numberofvia holes extending through it, each side of the ceramic carrier being metallised and the metallisation extending intoand/orthroughthevia holes in the ceramic material.
2. Acarrieraccording to claim 1,whereinthe metallising of the ceramic material is carried out by thick film printing and firing.
3. Acarrieraccordingto claim I, wherein the metallising ofthe ceramic material is carried out by metal deposition and plating.
4. A carrier according to any preceding claim, wherein the metal on one surface of the ceramic material is gold.
5 A carrier according to claim 4, wherein the metal on the other surface of the ceramic material is palladium silver.
6. A carrier according to claim 4 or claim 5, wherein a strip line circuit is attached to said one surface of the ceramic carrier.
7. Acarrier according to claim 6, wherein the strip line circuit is carried on a ceramic substrate which is bonded to the ceramic carrier.
8. A carrier according to claim 7, wherein the strip line circuit includes a GaAs or like device and wherein the substrate is provided with a hole for receiving said device wherein the device can be directly bonded to the ceramic carrier.
9. Acarrieraccording to any preceding claim, wherein a metal insert is placed in the ceramic material for the purposes of heat removal.
10. Acarrier for a hybrid or high frequency integrated circuit substantially as described herein with reference to the drawings.
GB8607105A 1986-03-21 1986-03-21 Carrier for high frequency integrated circuits Withdrawn GB2188194A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8607105A GB2188194A (en) 1986-03-21 1986-03-21 Carrier for high frequency integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8607105A GB2188194A (en) 1986-03-21 1986-03-21 Carrier for high frequency integrated circuits

Publications (2)

Publication Number Publication Date
GB8607105D0 GB8607105D0 (en) 1986-04-30
GB2188194A true GB2188194A (en) 1987-09-23

Family

ID=10595045

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8607105A Withdrawn GB2188194A (en) 1986-03-21 1986-03-21 Carrier for high frequency integrated circuits

Country Status (1)

Country Link
GB (1) GB2188194A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2226707A (en) * 1988-11-03 1990-07-04 Micro Strates Inc Ceramic substrate for hybrid microcircuits and method of making the same
WO2006034697A1 (en) * 2004-09-30 2006-04-06 Infineon Technologies Ag Method for producing a flange for a semiconductor component, and flange produced according to said method

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1186558A (en) * 1966-06-28 1970-04-02 Photocircuits Corp Improvements in Metallization of Insulating Subtrates
GB1372901A (en) * 1971-12-02 1974-11-06 Ibm Electrical interconnection structure
GB1422085A (en) * 1973-02-28 1976-01-21 Siemens Ag Thick-film circuits production of formaldehyde in a fluidised bed with a specific
GB1424642A (en) * 1973-02-08 1976-02-11 Siemens Ag Layer circuits
GB1476886A (en) * 1974-04-22 1977-06-16 Trw Inc Ceramic printed circuit board structure
GB1485569A (en) * 1974-09-10 1977-09-14 Siemens Ag Multi-layer wired substrates for multi-chip circuits
GB1487800A (en) * 1974-12-31 1977-10-05 Ibm Plated through-holes for printed circuits
GB1488301A (en) * 1974-09-27 1977-10-12 Ibm Methods of forming electrical conductors
EP0109084A1 (en) * 1982-11-15 1984-05-23 Storno A/S A method of making a double-sided thick-film integrated circuit
GB2136210A (en) * 1983-02-14 1984-09-12 Raymond E Wiech Method of Forming Substrates
EP0138671A2 (en) * 1983-09-21 1985-04-24 Allied Corporation Method of making a printed circuit board
GB2156593A (en) * 1984-03-28 1985-10-09 Plessey Co Plc Through hole interconnections

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1186558A (en) * 1966-06-28 1970-04-02 Photocircuits Corp Improvements in Metallization of Insulating Subtrates
GB1372901A (en) * 1971-12-02 1974-11-06 Ibm Electrical interconnection structure
GB1424642A (en) * 1973-02-08 1976-02-11 Siemens Ag Layer circuits
GB1422085A (en) * 1973-02-28 1976-01-21 Siemens Ag Thick-film circuits production of formaldehyde in a fluidised bed with a specific
GB1476886A (en) * 1974-04-22 1977-06-16 Trw Inc Ceramic printed circuit board structure
GB1485569A (en) * 1974-09-10 1977-09-14 Siemens Ag Multi-layer wired substrates for multi-chip circuits
GB1488301A (en) * 1974-09-27 1977-10-12 Ibm Methods of forming electrical conductors
GB1487800A (en) * 1974-12-31 1977-10-05 Ibm Plated through-holes for printed circuits
EP0109084A1 (en) * 1982-11-15 1984-05-23 Storno A/S A method of making a double-sided thick-film integrated circuit
GB2136210A (en) * 1983-02-14 1984-09-12 Raymond E Wiech Method of Forming Substrates
EP0138671A2 (en) * 1983-09-21 1985-04-24 Allied Corporation Method of making a printed circuit board
GB2156593A (en) * 1984-03-28 1985-10-09 Plessey Co Plc Through hole interconnections

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2226707A (en) * 1988-11-03 1990-07-04 Micro Strates Inc Ceramic substrate for hybrid microcircuits and method of making the same
GB2226707B (en) * 1988-11-03 1993-05-26 Micro Strates Inc Ceramic substrate for hybrid microcircuits and method of making the same
WO2006034697A1 (en) * 2004-09-30 2006-04-06 Infineon Technologies Ag Method for producing a flange for a semiconductor component, and flange produced according to said method

Also Published As

Publication number Publication date
GB8607105D0 (en) 1986-04-30

Similar Documents

Publication Publication Date Title
US5054870A (en) Electro-optical multiple connection arrangement
GB8508280D0 (en) Optical component mounting
BR8402803A (en) METALIZATION PROCESS FOR CERAMIC SUBSTRATES; METHOD FOR OBTAINING A PRINTED CIRCUIT ON CERAMIC SUBSTRATE; PROCESS FOR THE PRODUCTION OF A METALLIZED CONDUCTOR PATTERN, CERAMIC ITEM, METHOD FOR ADHESING TWO CERAMIC ITEMS
CA2115553A1 (en) Plated compliant lead
KR960019670A (en) Semiconductor chip package and manufacturing method thereof
JPS58159360A (en) Semiconductor device
CA2066125A1 (en) Electronic circuits and their fabrication
EP0252977A1 (en) Ultra high density pad array chip carrier
ATE11713T1 (en) DEVICE ARRANGEMENT WITH A RIGID SUBSTRATE.
ES464959A1 (en) Integrated circuit package
CA2024784A1 (en) Stackable multilayer substrate for mounting integrated circuits
EP0265629A3 (en) Printed circuit card fabrication process with nickel overplate
TW366574B (en) A semiconductor device package and method semiconductor package having multilayer of chip stacking connected to a ceramic package of printed circuit boards
JPH0548001A (en) Mounting method for semiconductor integrated circuit
KR900019545A (en) Manufacturing Method of Surface Mount Wiring Board
JP2006510235A (en) Inexpensive high-frequency package
US6387507B1 (en) High temperature co-fired ceramic and low temperature co-fired ceramic combination electronic package device and method
KR900701043A (en) Uniaxial electroconductive articles
GB2188194A (en) Carrier for high frequency integrated circuits
KR19990072029A (en) Microwave hybrid integrated circuit
JPS56161696A (en) Board
KR880002417A (en) Aluminum Nitride (AIN) Circuit Board
KR960005993A (en) Electronic device with compliant metal chip-based bonding layer (s)
FR2716037B1 (en) Method for connecting electronic circuits in a multi-chip module with co-cooked substrate, and multi-chip module thus obtained.
RU98101113A (en) CASE FOR INSTALLING THE CRYSTAL OF AN INTEGRAL CIRCUIT AND THE METHOD OF ITS INSTALLATION

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)