GB2165091B - Igfet and method for fabricating same - Google Patents

Igfet and method for fabricating same

Info

Publication number: GB2165091B
Authority: GB; United Kingdom
Prior art keywords: igfet; fabricating same; fabricating; same
Prior art date: 1984-09-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB08523651A

Other versions

GB8523651D0 (en

GB2165091A (en

Inventor

Lawrence Alan Goodman

John Patrick Russell

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

RCA Corp

Original Assignee

RCA Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-09-27

Filing date

1985-09-25

Publication date

1988-04-20

1985-09-25 Application filed by RCA Corp filed Critical RCA Corp

1985-10-30 Publication of GB8523651D0 publication Critical patent/GB8523651D0/en

1986-04-03 Publication of GB2165091A publication Critical patent/GB2165091A/en

1988-04-20 Application granted granted Critical

1988-04-20 Publication of GB2165091B publication Critical patent/GB2165091B/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

GB08523651A 1984-09-27 1985-09-25 Igfet and method for fabricating same Expired GB2165091B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US65510984A	1984-09-27	1984-09-27

Publications (3)

Publication Number	Publication Date
GB8523651D0 GB8523651D0 (en)	1985-10-30
GB2165091A GB2165091A (en)	1986-04-03
GB2165091B true GB2165091B (en)	1988-04-20

Family

ID=24627549

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08523651A Expired GB2165091B (en)	1984-09-27	1985-09-25	Igfet and method for fabricating same

Country Status (4)

Country	Link
JP (1)	JPS6184867A (en)
DE (1)	DE3533808A1 (en)
FR (1)	FR2570880A1 (en)
GB (1)	GB2165091B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2193597A (en) *	1986-08-08	1988-02-10	Philips Electronic Associated	Method of manufacturing a vertical DMOS transistor
JPS63302535A (en) *	1987-06-03	1988-12-09	Mitsubishi Electric Corp	Gallium arsenide integrated circuit
JP2526960B2 (en) *	1988-01-11	1996-08-21	日本電装株式会社	Conduction modulation type MOSFET
JPH01235277A (en) *	1988-03-15	1989-09-20	Nec Corp	Vertical field-effect transistor
JP2510710B2 (en) *	1988-12-13	1996-06-26	三菱電機株式会社	MOS field effect transistor formed in semiconductor layer on insulator substrate
KR20100135521A (en) *	2009-06-17	2010-12-27	주식회사 하이닉스반도체	Semiconductor device and manufacturing method thereof
CN106206300A (en) *	2015-04-29	2016-12-07	北大方正集团有限公司	Vertical double diffused metal-oxide semiconductor field effect transistor and processing method
CN109817707A (en) *	2019-01-15	2019-05-28	上海华虹宏力半导体制造有限公司	RC-IGBT structure and its manufacturing method
CN117238969A (en) *	2023-11-13	2023-12-15	深圳基本半导体有限公司	Silicon carbide MOSFET device and preparation method and application thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5363983A (en) *	1976-11-19	1978-06-07	Toshiba Corp	Semiconductor device
JPS543480A (en) *	1977-06-09	1979-01-11	Fujitsu Ltd	Manufacture of semiconductor device
DE2930780C2 (en) *	1979-07-28	1982-05-27	Deutsche Itt Industries Gmbh, 7800 Freiburg	Method of manufacturing a VMOS transistor
DE3240162C2 (en) *	1982-01-04	1996-08-01	Gen Electric	Method of fabricating a double-diffused source-based short-circuit power MOSFET
US4503598A (en) *	1982-05-20	1985-03-12	Fairchild Camera & Instrument Corporation	Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques
JPS5957477A (en) *	1982-09-27	1984-04-03	Fujitsu Ltd	semiconductor equipment
CA1216968A (en) *	1983-09-06	1987-01-20	Victor A.K. Temple	Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short

1985
- 1985-09-19 FR FR8513907A patent/FR2570880A1/en active Pending
- 1985-09-21 DE DE19853533808 patent/DE3533808A1/en not_active Withdrawn
- 1985-09-25 GB GB08523651A patent/GB2165091B/en not_active Expired
- 1985-09-26 JP JP60214398A patent/JPS6184867A/en active Pending

Also Published As

Publication number	Publication date
GB8523651D0 (en)	1985-10-30
JPS6184867A (en)	1986-04-30
DE3533808A1 (en)	1986-04-03
GB2165091A (en)	1986-04-03
FR2570880A1 (en)	1986-03-28

Publication	Publication Date	Title
EP0155158A3 (en)	1986-11-20	Method and apparatus for manufacturing innerspring constructions
DE3567580D1 (en)	1989-02-23	Chromatographic method and means
GB2162065B (en)	1988-09-14	Implant and method for production thereof
GB8508253D0 (en)	1985-05-09	Locomotion-command method
GB8525099D0 (en)	1985-11-13	Enzyme-granulating method
DE3264103D1 (en)	1985-07-18	Fet and method for manufacturing such
EP0169022A3 (en)	1987-09-02	Concrete structural member and method for manufacture thereof
AU573675B2 (en)	1988-06-16	Method and appartus for forming can ends
DE3571925D1 (en)	1989-09-07	Dragee and method for its manufacture
GB2159836B (en)	1988-02-24	Copper-nickel-tin-titanium-alloy and a method for its manufacture
GB2165091B (en)	1988-04-20	Igfet and method for fabricating same
EP0162317A3 (en)	1986-11-20	Armatures and method for manufacturing such armatures
DE3264850D1 (en)	1985-08-29	Various-covers and method for producing same
DE3477063D1 (en)	1989-04-13	Method for producing crystallographs and comparison thereof
GB2160562B (en)	1987-09-16	Ground-freezing method
GB8719664D0 (en)	1987-09-30	Exposure method
DE3474292D1 (en)	1988-11-03	Wear-resistant member and manufacturing method thereof
EP0154941A3 (en)	1986-10-22	Thermometer and method for its manufacture
GB2169813B (en)	1988-06-02	Compost-making apparatus and method
PT80065A (en)	1985-04-01	Adjustable-delivery cigarette and method for producing the same
GB2166507B (en)	1988-05-18	Gasket and gasket manufacturing method
GB8719665D0 (en)	1987-09-30	Exposure method
BG48273A1 (en)	1991-01-15	Polymerisationable oligoimide and method for its preparation
BG47569A1 (en)	1990-08-15	1- thiocarbamoylmethylpyrolidene- 2- tion and method for its preparation
BG50210A1 (en)	1992-06-15	Waterworking method

Legal Events

Date	Code	Title	Description
1991-05-22	PCNP	Patent ceased through non-payment of renewal fee