GB2143082B - Bipolar lateral transistor - Google Patents

Bipolar lateral transistor

Info

Publication number: GB2143082B
Authority: GB; United Kingdom
Prior art keywords: lateral transistor; bipolar lateral; bipolar; transistor; lateral
Prior art date: 1983-07-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB08318320A

Other versions

GB2143082A (en

GB8318320D0 (en

Inventor

J M Young

P F Blomley

Roger Leslie Baker

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STC PLC

Original Assignee

Standard Telephone and Cables PLC

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-07-06

Filing date

1983-07-06

Publication date

1987-06-17

1983-07-06 Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC

1983-07-06 Priority to GB08318320A priority Critical patent/GB2143082B/en

1983-08-10 Publication of GB8318320D0 publication Critical patent/GB8318320D0/en

1985-01-30 Publication of GB2143082A publication Critical patent/GB2143082A/en

1987-06-17 Application granted granted Critical

1987-06-17 Publication of GB2143082B publication Critical patent/GB2143082B/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well

GB08318320A 1983-07-06 1983-07-06 Bipolar lateral transistor Expired GB2143082B (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
GB08318320A GB2143082B (en)	1983-07-06	1983-07-06	Bipolar lateral transistor

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB08318320A GB2143082B (en)	1983-07-06	1983-07-06	Bipolar lateral transistor

Publications (3)

Publication Number	Publication Date
GB8318320D0 GB8318320D0 (en)	1983-08-10
GB2143082A GB2143082A (en)	1985-01-30
GB2143082B true GB2143082B (en)	1987-06-17

Family

ID=10545330

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08318320A Expired GB2143082B (en)	1983-07-06	1983-07-06	Bipolar lateral transistor

Country Status (1)

Country	Link
GB (1)	GB2143082B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2581248B1 (en) *	1985-04-26	1987-05-29	Efcis	METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTORS AND LATERAL BIPOLAR TRANSISTORS ON THE SAME SUBSTRATE
US4727046A (en) *	1986-07-16	1988-02-23	Fairchild Semiconductor Corporation	Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases
KR900001062B1 (en) *	1987-09-15	1990-02-26	강진구	Manufacturing Method of Semiconductor By Sea Morse Device
EP0396948B1 (en) *	1989-04-21	1997-12-29	Nec Corporation	Bi-cmos integrated circuit
DE4137101A1 (en) *	1991-02-28	1992-09-03	Daimler Benz Ag	LATERAL SEMICONDUCTOR COMPONENT

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3873989A (en) *	1973-05-07	1975-03-25	Fairchild Camera Instr Co	Double-diffused, lateral transistor structure
JPS56131954A (en) *	1980-03-19	1981-10-15	Nippon Telegr & Teleph Corp <Ntt>	Semiconductor device

1983
- 1983-07-06 GB GB08318320A patent/GB2143082B/en not_active Expired

Also Published As

Publication number	Publication date
GB2143082A (en)	1985-01-30
GB8318320D0 (en)	1983-08-10

Publication	Publication Date	Title
DE3479368D1 (en)	1989-09-14	Heterostructure bipolar transistor
GB2161081B (en)	1987-02-25	Bipolar electrocoagulator
EP0145004A3 (en)	1987-08-19	Bipolar transistor-field effect transistor composite circuit
EP0558100A3 (en)	1994-07-13	Bipolar transistor
EP0247386A3 (en)	1988-03-16	Lateral transistor
EP0233725A3 (en)	1988-07-20	Field effect transistor
DE3466138D1 (en)	1987-10-15	Method for making lateral bipolar transistors
GB8725631D0 (en)	1987-12-09	Bipolar transistor
GB8333696D0 (en)	1984-01-25	Transistor amplifier
GB2073486B (en)	1984-12-19	Bipolar transistors
DE3468593D1 (en)	1988-02-11	Power transistor
GB8531025D0 (en)	1986-01-29	Bipolar transistor integrated circuit
GB2156579B (en)	1987-05-07	Field effect transistors
GB8322625D0 (en)	1983-09-28	Field effect transistor
JPS5734365A (en)	1982-02-24	Symmetrical bipolar transistor
GB8406696D0 (en)	1984-04-18	Amplifier with bipolar transistors
EP0303435A3 (en)	1990-01-03	Bipolar transistors
DE3380864D1 (en)	1989-12-21	Transistors
GB2143082B (en)	1987-06-17	Bipolar lateral transistor
GB2128026B (en)	1986-03-26	Transistors
GB8610314D0 (en)	1986-06-04	Bipolar transistor
BG37507A1 (en)	1985-06-14	Bipolar lateral magnetotransistor
GB8316559D0 (en)	1983-07-20	Bipolar transistors
GB2129214B (en)	1986-04-03	Bipolar transistors
JPS57157570A (en)	1982-09-29	Lateral transistor

Legal Events

Date	Code	Title	Description
1993-08-25	732E	Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
1994-03-02	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 19930706